Patent classifications
H10K59/1216
DISPLAY PANEL
A display panel includes a first substrate, an upper capacitor electrode, a capacitor dielectric layer, a second substrate opposite to the first substrate, a conductive bump, an electroluminescent layer, and a counter electrode. The upper capacitor electrode is disposed on an inner surface of the second substrate. The upper capacitor electrode is disposed on an inner surface of the second substrate. The capacitor dielectric layer covers the upper capacitor electrode of the second substrate. The first substrate has at least one pixel electrode and a first capacitor electrode separated from the pixel electrode. The conductive bump is protrusively disposed on the first capacitor electrode of the first substrate. The electroluminescent layer is sandwiched between the pixel electrode and the counter electrode.
THIN FILM TRANSISTOR SUBSTRATE AND DISPLAY DEVICE USING THE SAME
A thin film transistor (TFT) substrate and a display device using the same are disclosed. The TFT substrate includes a first TFT including a polycrystalline semiconductor layer, a first gate electrode, a first source electrode, and a first drain electrode deposited on a substrate, a second TFT separated from the first TFT, the second TFT including a second gate electrode, an oxide semiconductor layer, a second source electrode, and a second drain electrode deposited on the first gate electrode, and a plurality of storage capacitors separated from the first and second TFTs, each storage capacitor including a first dummy semiconductor layer, a first gate insulating layer on the first dummy semiconductor layer, a first dummy gate electrode on the first gate insulating layer, and an intermediate insulating layer on the first dummy gate electrode.
Display panel having a valley portion and display apparatus including the same
Provided is a display panel including a main display area, a component area having a transmissive area, a peripheral area outside the main display area, a substrate, a bottom metal layer on the substrate, and defining an opening corresponding to the transmissive area, a valley portion adjacent to a boundary between the bottom metal layer and the transmissive area, and a thin-film encapsulation layer on the valley portion, and including an inorganic layer and an organic layer.
Organic Light Emitting Display Device Comprising Multi-Type Thin Film Transistor and Method of Manufacturing the Same
An organic light emitting display device includes a driving TFT on the substrate, a switching TFT on the substrate, and an organic light emitting diode. The driving TFT includes a first active layer formed of poly-Si, and at least a first part of an interlayer insulation layer on the first active layer. The interlayer insulation layer is formed of a first material including hydrogen. The switching TFT includes a second active layer, at least a second part of the interlayer insulation layer between the first active layer and the second active layer, and at least a part of a gate insulation layer between the second part of the interlayer insulation layer and the second active layer. The gate insulation layer is formed from a second material different from the first material and blocking diffusion of hydrogen from the interlayer insulation layer to the second active layer.
Organic light-emitting diode display substrate, manufacturing method thereof, and display device
The present disclosure relates to the field of display technology, and provides an OLED display substrate, a manufacturing method and a display device. The OLED display substrate includes: a base substrate; an active layer arranged on the base substrate; a gate insulation layer arranged at a side of the active layer away from the base substrate; and a gate electrode layer arranged at a side of the gate insulation layer away from the base substrate. An orthogonal projection of the gate electrode layer onto the base substrate at least partially overlaps an orthogonal projection of the active layer onto the base substrate, and the gate electrode layer and the active layer form a first storage capacitor of the OLED display substrate.
Display apparatus and electronic device with light emitting device drive circuit including transistors with different semiconductor materials
[Object] To provide a display apparatus that can achieve enhancement in display performance of a screen and higher definition. [Solution] There is provided a display apparatus. The drive circuit includes a drive transistor configured to control the light emitting unit, a video signal writing transistor configured to control writing of a video signal, and a capacitative element. In the drive transistor, one source/drain region is connected to a current supply line, another source/drain region is connected to the light emitting unit and a first node of the capacitative element, and a gate electrode is connected to a second node of the capacitative element. In the video signal writing transistor, one source/drain region is connected to a data line, another source/drain region is connected to the gate electrode of the drive transistor and the second node of the capacitative element, and a gate electrode is connected to a scanning line. The drive transistor and the video signal writing transistor are different in carrier mobility.
Display device
A display device is disclosed that may include a first active layer disposed on a substrate, a scan line disposed on the first active layer, extending in a first direction and including a first protruding portion protruding in a second direction crossing the first direction, a first compensation control line disposed on the first active layer, extending in the first direction and spaced apart from the scan line in the second direction, and a second active layer disposed on the scan line and the first compensation control line, overlapping the scan line and the first compensation control line and including a second protruding portion protruding in the first direction. The first protruding portion may be positioned outside the second active layer in the first direction in a plan view.
FLEXIBLE DISPLAY DEVICE AND METHOD OF MANUFACTURING THE SAME
A flexible display device including a substrate, a light emitting layer, a first insulating layer, and a conductive layer. The substrate includes a bent region and a non-bent region. The light emitting layer overlaps the non-bent region. The first insulating layer is disposed on the substrate. The conductive layer is disposed on the first insulating layer. A sidewall of the first insulating layer includes a first tapered surface. The first tapered surface includes at least three curved surface portions continuously arranged with one another.
DISPLAY SUBSTRATE AND DISPLAY DEVICE
Provided are a display substrate and a display device. The display substrate includes a base substrate, and gate lines extending in a first direction, data lines extending in a second direction and pixel units that are on the base substrate, the first direction intersecting the second direction; each pixel unit including sub-pixels, each sub-pixel including a pixel circuit; the pixel circuit including at least a switching transistor, a drive transistor, a sensing transistor, and a storage capacitor; for each pixel circuit, the switching transistor, the drive transistor, and the sensing transistor therein are all on a same side of the storage capacitor; the switching transistor is at an intersection of the gate line and the data line connected thereto, and the switching transistor is adjacent to the sensing transistor in the first direction and adjacent to the drive transistor in the second direction.
DISPLAY DEVICE INCLUDING PIXELS WITH DIFFERENT TYPES OF TRANSISTORS
A display device may include a plurality of pixels each including a light emitting element. A first scan line and a second scan line, are disposed in each of the pixels. A data line is disposed in each of the pixels. A power line is disposed in each of the pixels. A reference voltage line is disposed in each of the pixels. A first transistor controls a current of the light emitting element. A second transistor is connected between the data line and a first gate electrode of the first transistor. A third transistor is connected between the reference voltage line and a first electrode of the first transistor. A fourth transistor is connected between the power line and a second electrode of the first transistor. The fourth transistor may be a transistor of a type different from that of the first to third transistors.