An OLED panel for a lighting device is provided. The OLED panel for a lighting device may include a substrate divided into a light emitting area and a pad area formed outside of the light emitting area; an auxiliary wiring pattern disposed on the substrate, the auxiliary wiring pattern having a taper-shaped cross-section whose width is gradually narrower toward an upper portion thereof; a first electrode disposed on the substrate on which the auxiliary wiring pattern is disposed; a passivation layer disposed on the first electrode within an area where the auxiliary wiring pattern disposed; an OLED light emitting structure disposed on the first electrode on which the passivation layer is disposed; a second electrode disposed on the OLED light emitting structure; and an encapsulating layer disposed on the second electrode, and the passivation layer may have a cross-section corresponding to a cross-section of the auxiliary wiring pattern in the light emitting area. The OLED panel for a lighting device may have a wide light emitting area by reducing a passivation area on the auxiliary wiring pattern.

Disclosed herein is an OLED lighting apparatus which can compensate for high sheet resistance of a first electrode formed of a transparent conductive material while improving light extraction efficiency through enhancement in aperture ratio. For this purpose, the OLED lighting apparatus omits auxiliary wires and, instead of the auxiliary wires, includes a first auxiliary wire and a second auxiliary wire to secure low resistance. As a result, the OLED lighting apparatus can compensate for high sheet resistance of the first electrode, thereby achieving normal light emission without reduction in luminance due to current drop when implemented as a large-area high-resolution lighting apparatus.

An organic light emitting diode (OLED) lighting apparatus capable of improving lighting efficiency and lifetime by maximizing a light emitting area is disclosed. The OLED lighting apparatus may include a first electrode, which is provided with an embossing pattern at an interface at which the first electrode contacts an overcoat layer on a substrate. The first electrode may be made of a high refractive transparent conductive material, and may be arranged in an entire active area of the OLED lighting apparatus. The OLED lighting apparatus can improve light extraction efficiency through a light scattering due to a microlens effect through the first electrode provided with the embossing pattern, which facilitates elimination of a light extraction layer arranged at the interface between the substrate and the overcoat layer, thereby reducing a process yield and manufacturing cost.

Disclosed herein is an organic light emitting diode (OLED) lighting device capable of expressing characters or drawings with various colors. The OLED lighting device according to aspects of the present disclosure includes a thermochromic pattern arranged inside or outside of a substrate, the thermo chromic pattern having a property of changing a color thereof according to a change in temperature. By applying a reversible thermochromic pattern, which may maintain or lose an original color thereof according to a temperature change, to the inside or outside of the substrate, it is possible to express characters and drawings with various colors without designing a processing pattern inside the substrate.

A flexible array substrate includes a display area and a non-display area, and the non-display area includes a bending area adjacent to the display area. The bending area includes a plurality of signal lines and a plurality of auxiliary lines on the base substrate, and the plurality of auxiliary lines are on a side of the plurality of signal lines away from the base substrate. An insulating layer is disposed between the plurality of auxiliary lines and the plurality of signal lines, and the insulating layer is provided with a concave section group formed by a plurality of concave sections which are arranged along an extension direction of the signal line in a region where the bending area overlaps any one of at least some signal lines of the plurality of signal lines, and each of the auxiliary lines covers at least one of concave section groups.

A non-volatile storage apparatus is proposed that includes a plurality of serially connected non-volatile reversible resistance-switching memory cells, a plurality of word lines such that each of the memory cells is connected to a different word line, a bit line connected to a first end of the serially connected memory cells and a switch connected to a second end of the serially connected memory cells. In one embodiment, the memory cells include a reversible resistance-switching structure comprising a first material, a second material and a reversible resistance-switching interface between the first material and the second material, a channel, and means for switching current between current flowing through the channel and current flowing through the reversible resistance-switching interface in order to program and read the reversible resistance-switching interface. A process for manufacturing the memory is also disclosed.

An OLED display device including: a substrate including a display area and a non-display area; an organic light emitting element including a first electrode, an organic light emitting layer on the first electrode, and a second electrode on the organic light emitting layer; a first conductive line at the non-display area of the substrate; a first organic layer on the first conductive line; a second conductive line on the first organic layer and connected to the first conductive line; a second organic layer on the second conductive line; and a third conductive line on the second organic layer and connected to the second conductive line. The third conductive line is connected to the second electrode. The first electrode is at the display area of the substrate.

The present disclosure relates to an array substrate, a method of fabricating the same, and a display panel. The array substrate includes a conductive layer formed on the base substrate, a dielectric layer formed on the conductive layer, wherein the dielectric layer has an opening exposing the conductive layer, wherein a vertical projection of the opening on the base substrate is in at least a portion of the pixel spacing region, a first electrode formed on the dielectric layer, a luminescent layer having a first portion on the first electrode and a second portion on the conductive layer in the opening, a second electrode formed on the luminescent layer, and an electrical connection portion in the second portion of the luminescent layer for providing an electrical connection from the conductive layer to the second electrode, and wherein the electrical connection portion is more conductive than the luminescent layer.

A non-volatile storage apparatus is proposed that includes a plurality of serially connected non-volatile reversible resistance-switching memory cells, a plurality of word lines such that each of the memory cells is connected to a different word line, a bit line connected to a first end of the serially connected memory cells and a switch connected to a second end of the serially connected memory cells. In one embodiment, the memory cells include a reversible resistance-switching structure comprising a first material, a second material and a reversible resistance-switching interface between the first material and the second material, a channel, and means for switching current between current flowing through the channel and current flowing through the reversible resistance-switching interface in order to program and read the reversible resistance-switching interface. A process for manufacturing the memory is also disclosed.

A non-volatile storage apparatus is proposed that includes a plurality of serially connected non-volatile reversible resistance-switching memory cells, a plurality of word lines such that each of the memory cells is connected to a different word line, a bit line connected to a first end of the serially connected memory cells and a switch connected to a second end of the serially connected memory cells. In one embodiment, the memory cells include a reversible resistance-switching structure comprising a first material, a second material and a reversible resistance-switching interface between the first material and the second material, a channel, and means for switching current between current flowing through the channel and current flowing through the reversible resistance-switching interface in order to program and read the reversible resistance-switching interface. A process for manufacturing the memory is also disclosed.