H10K59/80517

LIGHT-EMITTING ELEMENT, LIGHT-EMITTING DEVICE, ELECTRONIC DEVICE, AND LIGHTING DEVICE
20170179435 · 2017-06-22 ·

A novel light-emitting device is provided. A novel light-emitting device with high emission efficiency, low power consumption, and small viewing angle dependence of chromaticity is provided. The light-emitting device includes at least one light-emitting element and one optical element. A spectrum of light emitted from the light-emitting element through the optical element in a range of greater than 0 and less than or equal to 70 with respect to a normal vector of the light-emitting element has a first local maximum value in a wavelength range of greater than or equal to 400 nm and less than 480 nm and a second local maximum value located on a longer wavelength side than the first local maximum value. The intensity ratio of the second local maximum value to the first local maximum value is less than or equal to 15%.

TRANSPARENT DISPLAY PANEL AND DISPLAY DEVICE
20170178566 · 2017-06-22 ·

In accordance with various embodiments of the disclosed subject matter, a transparent display panel and a related display device are provided. In some embodiments, a transparent display panel is provided, the transparent display panel comprises: a first region and a second region, wherein the first region comprises a plurality of first display units, the second region comprises a plurality of second display units, a transmission rate of the one of the plurality of first display units is higher than a transmission rate of the one of the plurality of second display units, and a luminance rate of the one of the plurality of first display units is lower than a luminance rate of the one of the plurality of second display units.

Organic electroluminescent device, illumination apparatus, and illumination system

An organic electroluminescent device includes first and second electrode and an organic light emitting layer. The first electrode has an upper face. The organic light emitting layer is provided on the first electrode. The second electrode is provided on the organic light emitting layer. The second electrode includes a plurality of conductive parts. The conductive parts extend in a first direction parallel to the upper face and are arranged in a second direction. The second direction is parallel to the upper face and intersects with the first direction. When a length of each of the conductive parts in the second direction is set to W1 (micrometer), and a pitch of each of the conductive parts is set to P1 (micrometer). The W1 and the P1 satisfy a relationship of W1647(1W1/P1)+511 and a relationship of W1882(1W1/P1)+847.

Light emitting device, electrode structure and manufacturing method thereof

A light emitting device including a substrate, a first electrode structure, an organic light emitting structure and a second electrode structure is provided. The first electrode structure includes a first transparent conductive layer, a patterned conductive layer and a second transparent conductive layer disposed on the substrate in sequence, so that the patterned conductive layer is interposed between the second transparent conductive layer and the first transparent conductive layer in a thickness direction of the substrate. The organic light emitting structure and the second electrode structure are disposed on the substrate, and the organic light emitting structure is located between the first electrode structure and the second electrode structure in the thickness direction of the substrate. An electrode structure and a manufacturing method thereof are also provided.

DISPLAY DEVICE, DISPLAY UNIT, AND ELECTRONIC APPARATUS
20170162818 · 2017-06-08 ·

A display device includes a first electrode, a second electrode, a light-emitting layer, and an organic material layer. The light-emitting layer is included in an organic layer. The organic layer is provided between the first electrode and the second electrode. The organic material layer is provided between the first electrode and the light-emitting layer, and has microcrystallinity.

Method for manufacturing AMOLED backplane and structure thereof

The present invention provides a method for manufacturing an AMOLED backplane and a structure thereof. The method uses a solid phase crystallization process to crystallize and convert amorphous silicon into poly-silicon so as to prevent the issue of mura on a display device caused by excimer laser annealing and adopts a back channel etching structure to effectively reduce the number of masks used. The method for manufacturing the AMOLED backplane according to the present invention needs only seven masking operations and, compared to the prior art, saves two masking operations, thereby simplifying the manufacturing process, improving the manufacturing efficiency, and saving costs.

Light-Emitting Device, Electronic Device, and Lighting Device

To provide a novel light-emitting device with high productivity, the light-emitting device includes a first light-emitting element, a second light-emitting element, and a third light-emitting element. In the first light-emitting element, a first lower electrode, a first transparent conductive layer, a first light-emitting layer, a second light-emitting layer, and an upper electrode are stacked in this order. In the second light-emitting element, a second lower electrode, a second transparent conductive layer, the first light-emitting layer, the second light-emitting layer, and the upper electrode are stacked in this order. In the third light-emitting element, a third lower electrode, a third transparent conductive layer, the second light-emitting layer, and the upper electrode are stacked in this order. The first transparent conductive layer includes a first region. The second transparent conductive layer includes a second region as thick as the third transparent conductive layer. The first region is thicker than the second region.

Display device including swelling prevention layer
12232367 · 2025-02-18 · ·

A display device includes a substrate, a thin-film transistor disposed on the substrate, a via insulating layer disposed above the thin-film transistor, a first electrode disposed on the via insulating layer and electrically connected to the thin-film transistor, a pixel-defining layer disposed on the via insulating layer and on the first electrode and that includes an opening that partially exposes an upper surface of the first electrode; and a first swelling prevention layer disposed on one end of the upper surface of the first electrode and interposed between the first electrode and the pixel-defining layer. The pixel-defining layer comprises a first region that overlaps the first swelling prevention layer and the first electrode, and a second region that overlaps the first electrode but not the first swelling prevention layer. The second region of the pixel-defining layer is in direct contact with the upper surface of the first electrode.

Display device and fabrication method thereof

A high-resolution display device is provided. The display device includes a plurality of light-emitting units emitting light of different colors. The light-emitting unit has a microcavity structure and intensifies light with a specific wavelength. In the light-emitting units emitting light of different colors, reflective layers with different thicknesses are formed, an insulating layer is formed to cover the reflective layers, and then a top surface of the insulating layer is subjected to planarization treatment, whereby an insulating layer with different thicknesses is formed. After that, light-emitting elements emitting white light are formed over the planarized top surface of the insulating layer to overlap with the respective reflective layers, whereby the light-emitting units that intensify different colors due to different optical path lengths are separately formed.

METHOD FOR MANUFACTURING AMOLED BACKPLANE AND STRUCTURE THEREOF

The present invention provides a method for manufacturing an AMOLED backplane and a structure thereof. The method uses a solid phase crystallization process to crystallize and convert amorphous silicon into poly-silicon so as to prevent the issue of mura on a display device caused by excimer laser annealing and adopts a back channel etching structure to effectively reduce the number of masks used. The method for manufacturing the AMOLED backplane according to the present invention needs only seven masking operations and, compared to the prior art, saves two masking operations, thereby simplifying the manufacturing process, improving the manufacturing efficiency, and saving costs.