Provided is a light emitting device including a lower electrode, an upper electrode disposed to face the lower electrode, a quantum dot light emitting layer between the lower electrode and the upper electrode, an electron transport layer between the lower electrode and the quantum dot light emitting layer, and a hole transport layer between the upper electrode and the quantum dot light emitting layer, wherein the quantum dot light emitting layer includes a quantum dot, and a first ligand on a surface of the quantum dot, and a second ligand on the surface of the quantum dot.

An electroluminescent device includes a first electrode and a second electrode facing each other, and a light emitting layer disposed between the first electrode and the second electrode, where the light emitting layer includes a first light emitting layer including a first quantum dot and a second light emitting layer including a second quantum dot and an n-type metal oxide.

The present disclosure relates to a device that includes a first layer that includes at least one of a semiconducting material, a hole transport material (HTM), and/or an electron transport material (ETM), a second layer, and a third layer that includes a material that is at least one of transparent or conductive, where the second layer is positioned between the first layer and the third layer, the first layer, the second layer, and the third layer are in electrical contact with each other, and the third layer has a first thickness between greater than zero nm and about 100 nm. In some embodiments of the present disclosure, the semiconducting material may include a perovskite.

A composite material, a preparation method thereof, and a quantum dot light-emitting diode. The composite material includes n-type metal oxide nanoparticles and an organic molecule shown in Formula I connected to the n-type metal oxide nanoparticles, and the organic molecule is bound on the surface of the n-type metal oxide nanoparticles through carboxyl groups. In Formula I, R is a hydrocarbyl group or a hydrocarbyl derivative containing at least one conjugation effect unit. The composite material has good film-forming quality and crystalline properties, and enhances the electron mobility of the composite material through conjugation efficiency, thereby having good electron transportation capability.

The invention provides a display apparatus and a method for manufacturing the same. The display apparatus includes a substrate and a thin-film transistor. The thin-film transistor includes a semiconductor layer disposed on the substrate and includes a gate electrode overlapping the semiconductor layer and insulated from the semiconductor layer. The semiconductor layer includes a polysilicon layer and an organic layer. The polysilicon layer has a first surface and has an uneven surface overlapping the first surface. The organic layer is disposed on the uneven surface of polysilicon layer and includes an organic semiconductor material.

The present invention provides quantum dot (QD)-in-matrix materials for use in blue light emitting diodes, wherein the QD-in-matrix material comprises a plurality of quantum dots embedded in a doped lead perovskite matrix.

The invention provides an optoelectronic device comprising a photoactive region, which photoactive region comprises: an n-type region comprising at least one n-type layer; a p-type region comprising at least one p-type layer; and, disposed between the n-type region and the p-type region: a layer of a perovskite semiconductor without open porosity. The perovskite semiconductor is generally light-absorbing. In some embodiments, disposed between the n-type region and the p-type region is: (i) a first layer which comprises a scaffold material, which is typically porous, and a perovskite semiconductor, which is typically disposed in pores of the scaffold material; and (ii) a capping layer disposed on said first layer, which capping layer is said layer of a perovskite semiconductor without open porosity, wherein the perovskite semiconductor in the capping layer is in contact with the perovskite semiconductor in the first layer. The layer of the perovskite semiconductor without open porosity (which may be said capping layer) typically forms a planar heterojunction with the n-type region or the p-type region. The invention also provides processes for producing such optoelectronic devices which typically involve solution deposition or vapour deposition of the perovskite. In one embodiment, the process is a low temperature process; for instance, the entire process may be performed at a temperature or temperatures not exceeding 150° C.

An electroluminescent device and a light-emitting layer and an application thereof. The light-emitting layer comprises at least one nano-crystalline semiconductor material and at least one exciplex; an emission spectrum of the exciplex is at least partially overlapped with an excitation spectrum of the nano-crystalline semiconductor material; and the attenuation life of an excited state of the exciplex is longer than the attenuation life of an excited state of the nano-crystalline semiconductor material.

The present invention relates to the field of display technologies, and provides an array substrate, a manufacturing method thereof, and a display device. The array substrate includes a first electrode layer. The first electrode layer may include an indium tin oxide layer and a planarization layer. The indium tin oxide layer is disposed on a substrate and includes indium tin oxide particles; the planarization layer is disposed on a side of the indium tin oxide layer away from the substrate, and fills at least part of gaps between the indium tin oxide particles, and the planarization layer can conduct electricity.

An organic semiconductor detector for detecting radiation has an organic conducting active region, an output electrode and a field effect semiconductor device. The field effect semiconductor device has a biasing voltage electrode and a gate electrode. The organic conducting active region is connected on one side to the field effect semiconductor device and is connected on another side to the output electrode. The organic semiconductor detector has an option switching circuitry having a field effect semiconductor device and resistance.