A display device according to an exemplary embodiment of the present invention includes: a substrate; a gate line and a data line that are provided on the substrate and are insulated from each other; a thin film transistor that is connected with the gate line and the data line; and a pixel electrode that is connected with the thin film transistor, in which at least one of the gate line and the data line includes a metal layer and a blocking layer that contacts the metal layer, and the blocking layer includes a first metal from a first group including molybdenum (Mo) and tungsten (W), a second metal from a second group including vanadium (V), niobium (Nb), zirconium (Zr), and tantalum (Ta), and oxygen (O).

A light-emitting diode, a method for fabricating the same, and a display device are disclosed. The light-emitting diode includes a first and second electrode; a first carrier transporting layer, a light emitting layer, and a second carrier transporting layer which are arranged between the first and second electrode in this order The light-emitting diode further includes a second carrier transporting layer which is arranged between the light emitting layer and the second electrode. The second carrier blocking layer blocks a portion of the second carrier from being transported to the light emitting layer. This decreases the injecting efficiency of the second carrier, improves an injecting balance between the second carrier and the first carrier with a low injecting efficiency, avoids energy consumption in the form of heat, and increases the light output efficiency and lifetime of the light-emitting diode.

An organometallic compound represented by Formula 1: ##STR00001##
wherein, in Formula 1, groups and variables are the same as described in the specification.

The present invention relates to a charge transporting semi-conducting material. The charge transporting semi-conducting material may include optionally at least one electrical dopant, and a branched or cross-linked charge transporting polymer that includes 1,2,3-triazole cross-linking units of at least one of the general formulae Ia and/or Ib herein. The charge transporting polymer can include ethylene building units substituted with at least one pending side group including a conjugated system of delocalized electrons. Also provided herein are processes for obtaining the charge transporting semi-conducting material.

An opposing substrate as a substrate for an electro-optical device includes a transparent base member and a light shielding portion disposed on a region between pixels on the base member. The light shielding portion includes a first reflective film and a second reflective film that is disposed to overlap the first reflective film and has a reflection rate lower than that of the first reflective film, and a first protective film that covers the first reflective film is provided between the first reflective film and the second reflective film.

Compounds are provided that are photoluminescent and electroluminescent, and may emit intense blue or deep blue light. Also provided are methods of producing photoluminescence and electroluminescence, methods of applying the compounds in thin films, and uses of the compounds described herein in a light emitting device, a luminescent probe, a sensor, and/or an electroluminescent device.

Provided is a novel display panel that is highly convenient or reliable or a display panel with a high pixel aperture ratio. The display panel includes the first display element, the first conductive film electrically connected to the first display element, the second conductive film having a region overlapping with the first conductive film, the second insulating film having a region sandwiched between the second conductive film and the first conductive film, a pixel circuit electrically connected to the second conductive film, and the second display element electrically connected to the pixel circuit. The second insulating film includes an opening, and the second conductive film is electrically connected to the first conductive film in the opening.

An OLED display substrate, a manufacturing method thereof, and a display device are provided. The OLED display substrate includes a reflective cathode layer, an organic light-emitting layer, a transparent anode layer and a high reflection layer sequentially arranged on a substrate, and the high reflection layer has reflectivity greater than a threshold.

An organic EL element is provided that has a high light emission efficiency and that emits a plurality of light beams having respective wavelength ranges different from one another, the light beams including short wavelength light having a high chromaticity. An organic EL element (1) includes an exciton generating layer (7) and a guest layer (8) that are adjacent to each other.

A semiconductor device includes a base; a gate electrode to which a gate voltage is applied; a source electrode and a drain electrode through which an electric current is generated according to the gate voltage being applied to the gate electrode; a semiconductor layer made of an oxide semiconductor; and a gate insulating layer inserted between the gate electrode and the semiconductor layer. The semiconductor layer includes a channel-forming region and a non-channel-forming region; the channel-forming region is in contact with the source electrode and the drain electrode, and the non-channel-forming region is in contact with the source electrode and the drain electrode.