A display device, an electronic device, or a lighting device that is unlikely to be broken is provided. A flexible first substrate and a flexible second substrate overlap with each other with a display element provided therebetween. A flexible third substrate is bonded on the outer surface of the first substrate, and a flexible fourth substrate is bonded on the outer surface of the second substrate. The third substrate is formed using a material softer than the first substrate, and the fourth substrate is formed using a material softer than the second substrate.

A light-emitting diode, a method for fabricating the same, and a display device are disclosed. The light-emitting diode includes a first and second electrode; a first carrier transporting layer, a light emitting layer, and a second carrier transporting layer which are arranged between the first and second electrode in this order The light-emitting diode further includes a second carrier transporting layer which is arranged between the light emitting layer and the second electrode. The second carrier blocking layer blocks a portion of the second carrier from being transported to the light emitting layer. This decreases the injecting efficiency of the second carrier, improves an injecting balance between the second carrier and the first carrier with a low injecting efficiency, avoids energy consumption in the form of heat, and increases the light output efficiency and lifetime of the light-emitting diode.

A substrate (100) has optical transparency, and a light-emitting unit (140) is formed on the substrate (100). The light-emitting unit (140) includes a first electrode (110), an organic layer (120), and a second electrode (130). The organic layer (120) is located between the first electrode (110) and the second electrode (130). The second electrode (130) extends outside the light-emitting unit (140). At least an end of a portion of the second electrode (130) which is located outside the light-emitting unit (140) is oxidized.

Compounds are provided that are photoluminescent and electroluminescent, and may emit intense blue or deep blue light. Also provided are methods of producing photoluminescence and electroluminescence, methods of applying the compounds in thin films, and uses of the compounds described herein in a light emitting device, a luminescent probe, a sensor, and/or an electroluminescent device.

An electroluminescence display includes a first line disposed on a substrate, a buffer layer covering the first line on the substrate, a repair branch line disposed on the buffer layer and crossing over the first line from one side to other side, a gate insulating layer covering the repair branch line on the substrate; and a second line disposed on the gate insulating layer and crossing over the first line, wherein the repair branch line includes a first end disposed outside of the one side and a second end disposed outside of the other side, the second line includes a upper branch line being apart from the repair branch line, the first end of the repair branch line overlaps with a first area of the upper branch line, and the second end of the repair branch line overlaps with a second area of the upper branch line.

A display device includes a plurality of first light blocking patterns, a first substrate on the first light blocking patterns, a plurality of second light blocking patterns on the first substrate, a driving device on the plurality of second light blocking patterns, a via insulating layer on the driving device and defining a plurality of light blocking areas, and a light emitting device on the via insulating layer, electrically connected to the driving device and including a light emitting area.

The present invention relates to an organic light emitting diode including an anode electrode, a cathode electrode, at least one emission layer and at least one organic semiconductor layer, wherein the at least one emission layer and the at least one organic semiconductor layer are arranged between the anode electrode and the cathode electrode and the organic semiconductor layer includes a substantially metallic rare earth metal dopant and a first matrix compound, the first matrix compound including at least two phenanthrolinyl groups as well as to a method for preparing the same.

An object of the present invention is to provide an organic electroluminescent element containing: a plurality of light emitting units interposed between a pair of an anode and a cathode; and a charge generating unit formed between the light emitting units, wherein a light emitting layer of a light emitting unit located in an N-th order from the anode and a light emitting layer of a light emitting unit located in an (N+1)-th order from the anode each contain an emission dopant to emit light of the same emission color; and a largest maximum emission wavelength in a photoluminescent spectrum of the emission dopant in the light emitting layer of the N-th light emitting unit is shorter than a largest maximum emission wavelength in a photoluminescent spectrum of the emission dopant in the light emitting layer of the (N+1)-th light emitting unit.

Disclosed are an electrode for a fluorescence organic light-emitting diode including a magnetic material and a fluorescence organic light-emitting diode including the electrode.

The electrode for the fluorescence organic light-emitting diode according to an embodiment of the present disclosure may include a first paramagnetic material layer formed on an organic layer; a ferromagnetic material layer formed on the first paramagnetic material layer; and a second paramagnetic material layer formed on the ferromagnetic material layer.

The present invention relates to a charge transporting semi-conducting material. The charge transporting semi-conducting material may include optionally at least one electrical dopant, and a branched or cross-linked charge transporting polymer that includes 1,2,3-triazole cross-linking units of at least one of the general formulae Ia and/or Ib herein.

The charge transporting polymer can include ethylene building units substituted with at least one pending side group including a conjugated system of delocalised electrons. Also provided herein are processes for obtaining the charge transporting semi-conducting material.