A thermoelectric coating containing “p” and “n” semiconductor elements in the form of non-contacting layers, which are arranged alternately with each other, so that between the “p” layers there is a “n” layer, with the “p” and “n” layers “n” are connected to each other in series with conductive elements with connection terminals for the output of the generated electrical energy, and containing an electrical insulator layer, is characterized in that a layer (2a) of an electrical insulator with a thickness of at least 200 nm is applied to the substrate (1), with layers of conductive elements (3a) with a thickness of 200 nm to 5 .Math.m, on which semiconductor layers “p” and “n” with a thickness of 50 nm to 5 .Math.m and a width of 0.1 mm to 5 mm are applied.

Systems and methods discussed herein relate to Zintl-type thermoelectric materials, including a p-type thermoelectric material according to the formula AM.sub.yX.sub.y, and includes at least one of calcium (Ca), europium (Eu), ytterbium (Yb), and strontium (Sr), and has a ZT of the above about 0.60 above 675K. The n-type thermoelectric component includes magnesium (Mg), tellurium (Te), antimony (Sb), and bismuth (Bi) according to the formula Mg.sub.3.2Sb.sub.1.3Bi.sub.0.5-xTe.sub.x that has an average ZT above 0.8 from 400K to 800K. The p-type and n-type materials discussed herein may be used alone, in combination with other materials, or in combination with each other in various configurations.

Systems and methods discussed herein relate to Zintl-type thermoelectric materials, including a p-type thermoelectric material according to the formula AM.sub.yX.sub.y, and includes at least one of calcium (Ca), europium (Eu), ytterbium (Yb), and strontium (Sr), and has a ZT of the above about 0.60 above 675K. The n-type thermoelectric component includes magnesium (Mg), tellurium (Te), antimony (Sb), and bismuth (Bi) according to the formula Mg.sub.3.2Sb.sub.1.3Bi.sub.0.5-xTe.sub.x that has an average ZT above 0.8 from 400K to 800K. The p-type and n-type materials discussed herein may be used alone, in combination with other materials, or in combination with each other in various configurations.

A thermoelectric conversion module having a further improved thermoelectric performance is provided. The thermoelectric conversion module includes: a base material; and a thermoelectric element layer including a thermoelectric semiconductor composition, wherein the thermoelectric semiconductor composition includes a thermoelectric semiconductor material, a heat resistant resin A, and an ionic liquid and/or inorganic ionic compound, and wherein the base material has a thermal resistance of 0.35 K/W or less.

A thermoelectric conversion module having a further improved thermoelectric performance is provided. The thermoelectric conversion module includes: a base material; and a thermoelectric element layer including a thermoelectric semiconductor composition, wherein the thermoelectric semiconductor composition includes a thermoelectric semiconductor material, a heat resistant resin A, and an ionic liquid and/or inorganic ionic compound, and wherein the base material has a thermal resistance of 0.35 K/W or less.

A thermotactile stimulation prosthesis includes a prosthesis extremity having a prosthesis interface configured for attachment to a human limb, and a thermoelectric actuator array coupled to the prosthesis interface and configured to establish a noninvasive thermoneural human-machine interface capable of providing sensations of temperature to the human limb.

A thermotactile stimulation prosthesis includes a prosthesis extremity having a prosthesis interface configured for attachment to a human limb, and a thermoelectric actuator array coupled to the prosthesis interface and configured to establish a noninvasive thermoneural human-machine interface capable of providing sensations of temperature to the human limb.

Provided is a thermoelectric module. The thermoelectric module includes a thermoelectric element including a first substrate, a first electrode disposed on the first substrate, a semiconductor structure disposed on the first electrode, a second electrode disposed on the semiconductor structure, and a second substrate disposed on the second electrode, a heat sink disposed on the second substrate, and an adhesive layer configured to bond the second substrate to the heat sink. The heat sink has a shape in which predetermined patterns are regularly repeated and connected. Each pattern includes a first surface disposed opposite to the second substrate, a in second surface which extends upward from one end of the first surface, a third surface which extends from the second surface to face the second substrate, and a fourth surface which extends upward from the other end opposite to the one end of the first surface and is connected to a third surface of an adjacent pattern. A distance between the third surface and the second substrate is greater than a distance between the first surface and the second substrate, and the adhesive layer is disposed between the second substrate and the first surface.

The present disclosure relates to an energy harvesting system for generating electrical energy by using a solar cell and a thermoelectric device. The energy harvesting system according to one embodiment of the present disclosure may include a solar cell for generating electrical energy based on sunlight; an interface layer located under the solar cell and including a heat transfer layer for transferring heat generated by the solar cell; a thermoelectric device located under the interface layer, including a first electrode, a second electrode, and a thermoelectric channel located between the first and second electrodes, and configured to generate electrical energy based on a temperature difference between the first and second electrodes that occurs when heat generated by the solar cell is transferred to the first electrode through the heat transfer layer; and a cooling layer located under the thermoelectric device and cooling the second electrode to increase the temperature difference.

A method includes forming a plurality of first semiconductor mesa structures at a first semiconductor substrate. The first semiconductor substrate has a first conductivity type. The method further includes forming a plurality of second semiconductor mesa structures at a second semiconductor substrate. The second semiconductor substrate has a second conductivity type. The method further includes providing a glass substrate between the first semiconductor substrate and the second semiconductor substrate. The method includes connecting the first semiconductor substrate to the second semiconductor substrate so that at least a portion of the glass substrate is located laterally between the first semiconductor mesa structures of the plurality of first semiconductor mesa structures and the second semiconductor mesa structures of the plurality of second semiconductor mesa structures.