A thermoelectric conversion material is represented by a composition formula Ag.sub.2-xα.sub.xS, where α is one selected from among Ni, V, and Ti. The value of x is greater than 0 and smaller than 0.6.

A thermoelectric conversion material is represented by a composition formula Ag.sub.2S.sub.(1-x)Se.sub.x. The value of x is not smaller than 0.2 and not greater than 0.95.

A compound containing Sn, Te and Mn, and further containing either one or both of Sb and Bi.

A semiconductor structure comprises one or more semiconductor devices, each of the semiconductor devices having two or more electrical connections; one or more first conductors connected to a first electrical connection on the semiconductor device, the first conductor comprising a first material having a positive Seebeck coefficient; and one or more second conductors connected to a second electrical connection on the semiconductor device, the second conductor comprising a second material having a negative Seebeck coefficient. The first conductor and the second conductor conduct electrical current through the semiconductor device and conduct heat away from the semiconductor device.

A method of forming a thermoelectric device structure and the resultant thermoelectric device structure. The method forms a first pattern of epitaxial thermoelectric elements of a first conductivity type on a first semiconductor substrate, forms a second pattern of epitaxial thermoelectric elements of a second conductivity type on a second semiconductor substrate, separates the epitaxial thermoelectric elements of the first conductivity type and places the epitaxial thermoelectric elements of the first conductivity type and the epitaxial thermoelectric elements of the second conductivity type on a heat sink, and integrates the heat sink to a device substrate including an electronic device to be cooled.

Provided herein is a skutterudite-type material having high thermoelectric conversion characteristics in a high temperature region. A thermoelectric conversion material is provided that contains a skutterudite-type material represented by the following composition formula (I)

I.sub.xGa.sub.yM.sub.4Pn.sub.12   (I),

wherein x and y satisfy 0.04≦x≦0.11, 0.11≦y≦0.34, and x<y, I represents one or more elements selected from the group consisting of In, Yb, Eu, Ce, La, Nd, Ba, and Sr, M represents one or more elements selected from the group consisting of Co, Rh, Ir, Fe, Ni, Pt, Pd, Ru, and Os, and Pn. represents one or more elements selected from the group consisting of Sb, As, P, Te, Sn, Bi, Ge, Se, and Si.

The present disclosure provides a thermoelectric structure including a thermoelectric substrate and a barrier layer covering the thermoelectric substrate. A material of the barrier layer is metallic glass. The thermoelectric structure of the present disclosure may apply to a medium-temperature (about 400K to about 800K) thermoelectric module to effectively block the diffusion of the thermoelectric substrate.

Disclosed is a method for manufacturing a thermoelectric material having high thermoelectric conversion performance in a broad temperature range. The method for manufacturing a thermoelectric material according to the present disclosure includes forming a mixture by weighing Cu and Se based on the following chemical formula 1 and mixing the Cu and the Se, and forming a compound by thermally treating the mixture: <Chemical Formula 1> Cu.sub.xSe where 2<x≦2.6.

Disclosed is a thermoelectric conversion material having excellent performance. The thermoelectric material according to the present disclosure includes a matrix including Cu and Se, and Cu-containing particles.

A method for producing an intermediate for thermoelectric conversion modules may avoid a supporting substrate, enabling annealing of a thermoelectric semiconductor material in a form avoiding a joint to an electrode, and enabling annealing of a thermoelectric semiconductor material at an optimum temperature. Such methods may produce an intermediate for thermoelectric conversion modules containing a P-type thermoelectric and an N-type thermoelectric element layer of a thermoelectric semiconductor composition, and include (A) forming the P-type thermoelectric element layer and the N-type thermoelectric element layer on a substrate; (B) annealing the P-type and N-type thermoelectric element layer formed in (A); (C) forming a sealant layer containing a curable resin or a cured product thereof, on the P-type and N-type thermoelectric element layer annealed in (B); and (D) peeling the P-type and the N-type thermoelectric element layer and also the sealant layer formed in (B) and (C) from the substrate.