A thermoelectric conversion material having a high dimensionless figure of merit ZT includes: a large number of polycrystalline grains which include a skutterudite-type crystal structure containing Yb, Co, and Sb; and an intergranular layer which is between the neighboring polycrystalline grains and includes crystals in which an atomic ratio of O to Yb is more than 0.4 and less than 1.5. A method for manufacturing a thermoelectric conversion material includes: a weighing step; a mixing step; a ribbon preparation step by rapidly cooling and solidifying a melt of the raw materials by using a rapid liquid cooling solidifying method; a first heat treatment step including heat treating in an inert atmosphere with an adjusted oxygen concentration; a second heat treatment step including heat treating in a reducing atmosphere; and manufacturing the thermoelectric conversion material by a pressure sintering step in an inert atmosphere.

A thermoelectric conversion material has a composition represented by the chemical formula Li.sub.3aBi.sub.1bSn.sub.b, in which the range of values a and b is: 0a<0.0003, and a+0.0003b0.016; or 0.0003a0.085, and 0<bexp[0.079(ln(a)).sup.21.43ln(a)10.5], and in which the thermoelectric conversion material has a BiF.sub.3-type crystal structure and has a p-type polarity.

A thermoelectric conversion material has a composition represented by the chemical formula Li.sub.3-aBi.sub.1-bGe.sub.b, in which the range of values a and b is: 0a0.0003, and a+0.0003b0.108; 0.0003a0.003, and 0b0.108; or 0.003a0.085, and 0bexp[0.157(In(a)).sup.22.22In(a)9.81], and in which the thermoelectric conversion material has a BiF.sub.3-type crystal structure and has a p-type polarity.

This disclosure relates to an integrated thermoelectric cooler and methods for forming thereof. The integrated thermoelectric cooler can include a plurality of thermoelectric rods located between the detector substrate and a system interposer. The detector substrate and the system interposer can directly contact ends of the thermoelectric rods. The integrated thermoelectric cooler can be formed by forming the plurality of thermoelectric rods on reels, for example, and the plurality of thermoelectric rods can be thinned down to a certain height. The thermoelectric rods can be transferred and bonded to the system substrate. An overmold can be formed around the plurality of thermoelectric rods. The height of the overmold and thermoelectric rods can be thinned down to another height. The thermoelectric rods can be bonded to the detector substrate. In some examples, the overmold can be removed.

Embodiments relate to an apparatus for nano-scale energy converters and electric power generators. The apparatus includes two electrodes positioned proximate to each other. An opening is positioned between the first and second electrodes. The first electrode has a first work function value and the second electrode has a different second work function value. A separation material is positioned within the opening. The separation material includes a first surface in at least partial physical contact with the first electrode and a second surface positioned opposite from the first surface. The second surface is in at least partial physical contact with the second electrode. The first and second electrodes and the separation material form an at least partially planar electric power harvesting device.

The disclosure is related to structures and method of making thermoelectric devices. The structures include an electrically and thermally nonconductive substrate with cylindrical or frustum-shaped tunnels. The tunnels may be filled with thermally and electrically conductive materials that resist diffusion. The structures include n-type and p-type materials, in homogeneous form or alternating with interlayers to block phonon conduction between layers of thermoelectric materials. The tunnels are individually associated with either n-type or p-type thermoelectric materials and connected in pairs to form alternating conductors on both sides of the substrate. The structures may also be coated with layers of gold and nickel and have thermoelectric materials deposited in the tunnels. The tunnels may be partially or fully capped with sintered nano-silver or solder. Notches may alternate sides to electrically isolate each side of the structure to provide current flow between the p-type and n-type thermoelectric layers.

The disclosure is related to structures and method of making thermoelectric devices. The structures include an electrically and thermally nonconductive substrate with cylindrical or frustum-shaped tunnels. The tunnels may be filled with thermally and electrically conductive materials that resist diffusion. The structures include n-type and p-type materials, in homogeneous form or alternating with interlayers to block phonon conduction between layers of thermoelectric materials. The tunnels are individually associated with either n-type or p-type thermoelectric materials and connected in pairs to form alternating conductors on both sides of the substrate. The structures may also be coated with layers of gold and nickel and have thermoelectric materials deposited in the tunnels. The tunnels may be partially or fully capped with sintered nano-silver or solder. Notches may alternate sides to electrically isolate each side of the structure to provide current flow between the p-type and n-type thermoelectric layers.

A structure and method for cooling a three-dimensional integrated circuit (3DIC) are provided. A cooling element is configured for thermal connection to the 3DIC. The cooling element includes a plurality of individually controllable cooling modules disposed at a first plurality of locations relative to the 3DIC. Each of the cooling modules includes a cold pole and a heat sink. The cold pole is configured to absorb heat from the 3DIC. The heat sink is configured to dissipate the heat absorbed by the cold pole and is coupled to the cold pole via an N-type semiconductor element and via a P-type semiconductor element. A temperature sensing element includes a plurality of thermal monitoring elements disposed at a second plurality of locations relative to the 3DIC for measuring temperatures at the second plurality of locations. The measured temperatures control the plurality of cooling modules.

To provide a thermoelectric conversion material having an enhanced thermoelectromotive force and a production method thereof. A thermoelectric conversion material including a matrix and a barrier material, wherein the matrix contains Mg.sub.2Si.sub.1-xSn.sub.x (x is from 0.50 to 0.80) and an n-type dopant and the barrier material contains Mg.sub.2Si.sub.1-ySn.sub.y (y is from 0 to 0.30), and a production method thereof. A thermoelectric conversion material and a production method thereof, in which the movement of minority carrier is blocked by a barrier material and the thermoelectromotive force is thereby enhanced, can be provided.

Provided are a thermoelectric material, a method of fabricating the same, and a thermoelectric device. The thermoelectric material includes a first material layer including a chalcogen element; and a second material layer including a reaction compound between the chalcogen element and a metal element, wherein the thermoelectric material has a structure in which the first material layer is inserted in the second material layer.