Micro-scale thermoelectric devices having high thermal resistance and efficiency for use in cooling and energy harvesting applications and relating fabricating methods are disclosed. The thermoelectric devices include first substrates substantially parallel with second substrates. Scaffold members are deposited between the first and second substrate. The scaffold members include a plurality of cavities having sidewalls. The scaffold members may be formed from the second substrate. The sidewalls are substantially vertical with respect to the second substrate. The sidewalls may be substantially parallel. Thermoelectric materials are deposited on the sidewalls.

Micro-scale thermoelectric devices having high thermal resistance and efficiency for use in cooling and energy harvesting applications and relating fabricating methods are disclosed. The thermoelectric devices include first substrates substantially parallel with second substrates. Scaffold members are deposited between the first and second substrate. The scaffold members include a plurality of cavities having sidewalls. The scaffold members may be formed from the second substrate. The sidewalls are substantially vertical with respect to the second substrate. The sidewalls may be substantially parallel. Thermoelectric materials are deposited on the sidewalls.

An Integrated Circuit (IC) assembly, comprising an IC package coupled to a substrate, and a subassembly comprising a thermal interface layer. The thermal interface layer comprises a phase change material (PCM) over the IC package. At least one thermoelectric cooling (TEC) apparatus is thermally coupled to the thermal interface layer.

A semiconductor sintered body comprising a polycrystalline body, wherein the polycrystalline body comprises silicon or a silicon alloy, and the average grain size of the crystal grains constituting the polycrystalline body is 1 μm or less, and the electrical conductivity is 10,000 S/m or higher.

When a size is increased for mass production, an area of a pressurized surface is increased. This raised a problem in that insufficient load or the like causes a pressure during pressure sintering and a relative density of a thermoelectric conversion element to be likely to become insufficient. As a solution, there is provided a method for producing a thermoelectric conversion element, including: a step of mixing a skutterudite-type thermoelectric conversion material powder containing Sb and a sintering agent containing a compound including Mn and Sb, to obtain a mixture; and a step of sintering the mixture.

A method of thermoelectric power generation by converting heat to electricity via the use of a ZrCoBi-based thermoelectric material, wherein a thermoelectric conversion efficiency of the ZrCoBi-based thermoelectric material is greater than or equal to 7% at a temperature difference of up to 800 K.

The present disclosure provides a thermoelectric conversion material having a composition represented by a chemical formula of Ba.sub.1-a-b-cSr.sub.bCa.sub.cK.sub.aMg.sub.2Bi.sub.2-dSb.sub.d. In the chemical formula, the following relationships are satisfied: 0.002≤a≤0.1, 0≤b, 0≤c, a+b+c≤1, and 0≤d≤2. In addition, the thermoelectric conversion material has a La.sub.2O.sub.3-type crystal structure.

A thermoelectric conversion module is disclosed that corrects the difference in thermal resistance between a P-type thermoelectric conversion member and an N-type thermoelectric conversion member. In this thermoelectric conversion module, since insulators included in the P-type thermoelectric conversion member and the N-type thermoelectric conversion member have a different thermal resistance, it is possible to correct the difference in thermal resistance between the P-type thermoelectric conversion element and the N-type thermoelectric conversion element.

Integrated circuit devices which include a thermoelectric generator which recycles heat generated by operation of an integrated circuit, into electrical energy that is then used to help support the power requirements of that integrated circuit. Roughly described, the device includes an integrated circuit die having an integrated circuit thereon, the integrated circuit having power supply terminals for connection to a primary power source, and a thermoelectric generator structure disposed in sufficient thermal communication with the integrated circuit die so as to derive, from heat generated by the die, a voltage difference across first and second terminals of the thermoelectric generator structure. A powering structure is arranged to help power the integrated circuit, from the voltage difference across the first and second terminals of the thermoelectric generator. The thermoelectric generator can include IC packaging material that is made from thermoelectric semiconductor materials.

A thermoelectric conversion element that can efficiently make a temperature difference across a thermoelectric conversion material is provided. In the thermoelectric conversion element, on a first surface of a thermoelectric conversion module comprising a P-type thermoelectric element, an N-type thermoelectric element, and an electrode, a thermally conductive resin layer A and a thermally conductive resin layer B having a lower thermal conductivity than the thermally conductive resin layer A are provided in an alternating manner so as to be in direct contact with the first surface, and on a second surface on the opposite side of the first surface of the thermoelectric conversion module, a thermally conductive resin layer a and a thermally conductive resin layer b having a lower thermal conductivity than the thermally conductive resin layer a are provided in an alternating manner so as to be in direct contact with the second surface.