A thermoelectric conversion element of the present disclosure includes a thermoelectric conversion layer, a first metal layer, a second metal layer, a first joining layer, and a second joining layer. At least one of the first joining layer and the second joining layer includes a second alloy. A content of Mg in the second alloy is 84 atm % or more and 89 atm % or less, a content of Cu in the second alloy is 11 atm % or more and 15 atm % or less, and a content of an alkaline earth metal in the second alloy is 0 atm % or more and 1 atm % or less.

A thermoelectric module according to one embodiment of the present invention comprises: a first substrate; a thermoelectric element disposed on the first substrate; a second substrate disposed on the thermoelectric element and having a smaller area than the first substrate; a sealing part disposed on the first substrate and surrounding a side surface of the thermoelectric element; and a wire part connected to the thermoelectric element, drawn out through the sealing part, and supplying power to the thermoelectric element, wherein the sealing part has a through hole through which the wire part passes, and the through hole is disposed closer to the second substrate than the first substrate.

The present invention relates to a method for manufacturing a thermoelectric half-cell which utilises the metallization for obtaining both the electric and thermal contact required to form a functional thermoelectric cell.

A thermoelectric module that has excellent thermal, electric properties, can realize high joining force between thermoelectric elements and an electrode, and can maintain stable joining even at a high temperature.

New thermoelectric materials, such as Mg.sub.3Bi.sub.2-based Zintl phase compounds are described, where the semi-metallic Mg.sub.3.2Bi.sub.2 show an unexpectedly large Seebeck coefficient at 350 K and enhanced thermoelectric performances.

A method may be provided of manufacturing a thermoelectric leg. The method may include preparing a first metal substrate including a first metal, and forming a first plated layer including a second metal on the first metal substrate. The method may also include disposing a layer including tellurium (Te) on the first plated layer, and forming a portion of the first plated layer as a first bonding layer by reacting the second metal and the Te. The method also includes disposing a thermoelectric material layer including bismuth (Bi) and Te on an upper surface of the first bonding layer, and disposing a second metal substrate, on which a second bonding layer and a second plated layer are formed, on the thermoelectric material layer, and sintering.

Disclosed is a method for producing a Heusler-based phase thermoelectric material using an amorphous phase precursor. More specifically disclosed is a method for producing a powder or bulk thermoelectric material having a microstructure including a Heusler-based phase with a thermoelectric effect by crystallization of an amorphous phase precursor prepared by a non-equilibrium processes. Also disclosed is a device using a Heusler-based phase thermoelectric material produced by the method. The method largely avoids the efficiency problems of conventional methods, including low productivity in scaling up caused by long annealing time, high annealing temperature, and contamination during nanopowder production, achieving improved process efficiency. In addition, the method enables efficient production of a thermoelectric material having a nano-sized microstructure that is difficult to produce by a conventional method.

The present disclosure provides a thermoelectric conversion material having a composition represented by a chemical formula of Ba.sub.1-a-b-cSr.sub.bCa.sub.cK.sub.aMg.sub.2Bi.sub.2-dSb.sub.d. In the chemical formula, the following relationships are satisfied: 0.002≤a≤0.1, 0≤b, 0≤c, a+b+c≤1, and 0≤d≤2. In addition, the thermoelectric conversion material has a La.sub.2O.sub.3-type crystal structure.

The present disclosure provides a thermoelectric conversion material having a composition represented by a chemical formula of Ba.sub.1-a-b-cSr.sub.bCa.sub.cK.sub.aMg.sub.2Bi.sub.2-dSb.sub.d. In the chemical formula, the following relationships are satisfied: 0.002≤a≤0.1, 0≤b, 0≤c, a+b+c≤1, and 0≤d≤2. In addition, the thermoelectric conversion material has a La.sub.2O.sub.3-type crystal structure.

A compound semiconductor which has an improved thermoelectric performance index together with excellent electrical conductivity, and thus may be utilized for various purposes such as a thermoelectric conversion material of thermoelectric conversion devices, solar cells, and the like, and to a method for preparing the same.