The present invention provides a novel compound semiconductor that has improved thermoelectric figure of merit as well as excellent electric conductivity, and thus, can be applied for various uses such as thermoelectric conversion material of a thermoelectric conversion device, a solar battery, and the like, and a method for preparing the same.

A flexible thermoelectric structure is provided, which includes a porous thermoelectric pattern having a first surface and a second surface opposite to the first surface, and a polymer film covering the first surface of the porous thermoelectric pattern. The polymer film fills pores of the porous thermoelectric pattern. The polymer film has a first surface and a second surface opposite to the first surface. The second surface of the polymer film is coplanar with the second surface of the porous thermoelectric pattern.

A flexible thermoelectric structure is provided, which includes a porous thermoelectric pattern having a first surface and a second surface opposite to the first surface, and a polymer film covering the first surface of the porous thermoelectric pattern. The polymer film fills pores of the porous thermoelectric pattern. The polymer film has a first surface and a second surface opposite to the first surface. The second surface of the polymer film is coplanar with the second surface of the porous thermoelectric pattern.

Provided is a thermoelectric material which exhibits excellent thermoelectric characteristics at room temperature; a method for producing this thermoelectric material; and a thermoelectric power generation element using this thermoelectric material. In an embodiment of the present invention, a thermoelectric material contains an inorganic compound that contains magnesium (Mg), antimony (Sb) and/or bismuth (Bi), copper (Cu), and if necessary M (M is composed of at least one element that is selected from the group consisting of selenium (Se) and tellurium (Te)); and inorganic compound is represented by MgaSb.sub.2-b-cBi.sub.bM.sub.cCu.sub.d, wherein a, b, c and d satisfy 3≤a 3.5, 0≤b≤2, 0≤c≤0.06, 0≤d≤0.1, and (b+1)≤2.

Provided is a thermoelectric material which exhibits excellent thermoelectric characteristics at room temperature; a method for producing this thermoelectric material; and a thermoelectric power generation element using this thermoelectric material. In an embodiment of the present invention, a thermoelectric material contains an inorganic compound that contains magnesium (Mg), antimony (Sb) and/or bismuth (Bi), copper (Cu), and if necessary M (M is composed of at least one element that is selected from the group consisting of selenium (Se) and tellurium (Te)); and inorganic compound is represented by MgaSb.sub.2-b-cBi.sub.bM.sub.cCu.sub.d, wherein a, b, c and d satisfy 3≤a 3.5, 0≤b≤2, 0≤c≤0.06, 0≤d≤0.1, and (b+1)≤2.

The present disclosure is related to thermoelectric panels and their use in cooling and heating systems. The cooling/heating systems may include a cylindrical plurality of thermoelectric panels. The panels may include thermoelectric devices embedded between a housing formed by heat conductive layers and edge structures for preserve a low thermal conductivity volume.

The present disclosure is related to thermoelectric panels and their use in cooling and heating systems. The cooling/heating systems may include a cylindrical plurality of thermoelectric panels. The panels may include thermoelectric devices embedded between a housing formed by heat conductive layers and edge structures for preserve a low thermal conductivity volume.

A compound semiconductor which has an improved thermoelectric performance index together with excellent electrical conductivity, and thus may be utilized for various purposes such as a thermoelectric conversion material of thermoelectric conversion devices, solar cells, and the like, and to a method for preparing the same.

The present disclosure is related to structures for and methods for producing thermoelectric devices. The thermoelectric devices include multiple stages of thermoelements. Each stage includes alternating n-type and p-type thermoelements. The stages are sandwiched between upper and lower sets of metal links fabricated on a pair of substrate layers. The metal links electrically connect pairs of n-type and p-type thermoelements from each stage. There may be additional sets of metal links between the multiple stages. The individual thermoelements may be sized to handle differing amounts of electric current to optimize performance based on their location within the multistage device.

Provided are an electrode material for thermoelectric conversion modules capable of preventing cracking and peeling of electrodes that may occur at the bonding parts of a thermoelectric element and an electrode under high-temperature conditions to thereby maintain a low resistance at the bonding parts, and a thermoelectric conversion module using the material. The electrode material for thermoelectric conversion modules includes a first substrate and a second substrate facing each other, a thermoelectric element formed between the first substrate and the second substrate, and an electrode formed on at least one substrate of the first substrate and the second substrate, wherein the substrate is a plastic film, the thermoelectric element contains a bismuth-tellurium-based thermoelectric semiconductor material, a telluride-based thermoelectric semiconductor material, an antimony-tellurium-based thermoelectric semiconductor material, or a bismuth-selenide-based thermoelectric semiconductor material, the electrode that is in contact with the thermoelectric element is formed of a metal material, and the metal material is gold, nickel, aluminum, rhodium, platinum, chromium, palladium, stainless steel, molybdenum or an alloy containing any of these metals.