Disclosed are methods for the manufacture of n-type and p-type filled skutterudite thermoelectric legs of an electrical contact. A first material of CoSi.sub.2 and a dopant are ball-milled to form a first powder which is thermo-mechanically processed with a second powder of n-type skutterudite to form a n-type skutterudite layer disposed between a first layer and a third layer of the doped-CoSi.sub.2. In addition, a plurality of components such as iron, and nickel, and at least one of cobalt or chromium are ball-milled form a first powder that is thermo-mechanically processed with a p-type skutterudite layer to form a p-type skutterudite layer second layer disposed between a first and a third layer of the first powder. The specific contact resistance between the first layer and the skutterudite layer for both the n-type and the p-type skutterudites subsequent to hot-pressing is less than about 10.0 .Math.cm.sup.2.

Devices and methods are provided for the low-cost manufacturing of thermoelectric power-generation devices (thermopiles) using stable, common materials that can function at very high temperatures. An improved geometry for thermocouple elements in the assembly provides for incorporating a large number of thermocouples. The geometry includes holes and cross-channels in an electrically-insulative device body comprising a material such as a ceramic or glass whereby wires may be deposited and the device heated to sinter or melt deposited junction-forming materials connecting the wires to form a thermopile. These device geometries and manufacturing procedures enable the low-cost production of thermopiles comprised of a massive number of thermocouple elements, from hundreds to hundreds of thousands or more, for electrical power generation using common, standard metallic thermocouple materials and common, widely used electrical insulation materials.

An electric generator device is provided that includes a thermoelectric array, a base plate, and an electric power output. The thermoelectric array may include a hot side portion and a cold side portion. The base plate may be configured to receive heat from a heat source to be transferred to the hot side portion of the thermoelectric array. The electric power output may be electrically coupled to the thermoelectric array. The thermoelectric array may be configured to convert a temperature differential into an electric voltage for output to the electric power output. The power generation housing may be configured to hold a heat rejection substance that absorbs heat from the cold side portion of the thermoelectric array to facilitate generation of the temperature differential between the hot side portion and the cold side portion of the thermoelectric array.

A heat-flux sensor includes first and second pieces made of different materials and arranged to constitute a contact junction for generating electromotive force in response to a temperature difference between the first and second pieces. The heat-flux sensor includes a first electric conductor connected to the first piece and a second electric conductor connected to the second piece so that the electromotive force is detectable from between ends of the first and second electric conductors. The mass and the heat capacity of the second piece are significantly greater than those of the first piece so that a heat-flux across the contact junction causes a temperature difference between the first and second pieces but no significant temperature change in the second piece. Thus, the electromotive force caused by the temperature difference is indicative of the heat-flux.

Materials and systems and methods of manufacture thereof that function as thermoelectric materials both in and near a cryogenic temperature range. In particular, the synthesis of heavy fermion materials that exhibit higher ZTs than previously achieved at cryogenic and near-cryogenic temperatures.

Methods of manufacturing thermocouples may involve exposing a first thermoelement wire and a second thermoelement wire to a temperature in a range extending from about 50 C. to about 60 C. above an intended operational temperature of the first and second thermoelement wires and until a rate of change of a normalized voltage output of the first thermoelement wire and the second thermoelement wire is about 0.001 normalized Volts per hour or less.

A cross-plane flexible micro-TEG with hundreds of pairs of thermoelectric pillars formed via electroplating, microfabrication, and substrate transferring processes is provided herein. Typically, fabrication is conducted on a Si substrate, which can be easily realized by commercial production line. The fabricated micro-TEG transferred to the flexible layer from the Si substrate. Fabrication methods provided herein allow fabrication of main TEG components including bottom interconnectors, thermoelectric pillars, and top interconnectors by electroplating. Such flexible micro-TEGs provide high output power density due to high density of thermoelectric pillars and very low internal resistance of electroplated components. The flexible micro-TEG can achieve a power per unit area of 4.5 mW cm.sup.2 at a temperature difference of 50 K, which is comparable to performance of flexible TEGs developed by screen printing. The power per unit weight of flexible TEGs described herein is as high as 60 mW g.sup.1, which is advantageous for wearable applications.

The present invention relates to a Pt vs. RhPt thermocouple (such as a Type R or Type S thermocouple), and to the modification of the electrical properties of the same, while in service. More especially there is provided a method for reducing the drift of a Pt vs. RhPt thermocouple while the thermocouple is in use in an oxidising environment, wherein the Pt limb of the thermocouple is doped platinum comprising an effective amount of one or more dopants selected from the group consisting of yttrium, zirconium and samarium.

A method for producing a thermoelectric material, comprising: mixing an Sn powder and a powder containing a first dopant element to obtain a first mixed raw material, heating the first mixed raw material at a temperature allowing for mutual diffusion of Sn and the first dopant element to obtain a first aggregate, pulverizing the first aggregate to obtain a first powder, mixing an Mg powder, an Si powder, and the first powder to obtain a second mixed raw material, heating the second mixed raw material at a temperature allowing for mutual diffusion of Mg, Si, Sn and the first dopant element to obtain a second aggregate, pulverizing the second aggregate to obtain a second powder, and pressure-sintering the second powder, and wherein the first dopant element is one or more elements selected from Al, Ag, As, Bi, Cu, Sb, Zn, P, and B.

A molten material apparatus can include a container including a wall at least partially defining a containment area and an opening extending through the wall. The molten material apparatus can include a protective sleeve mounted at least partially within the opening of the wall of the container. A thermocouple can be positioned within an internal bore of the protective sleeve. A method of processing molten material can include inserting a thermocouple into a protective sleeve fabricated from a refractory ceramic material, and measuring a temperature of material within a containment area of a container with the thermocouple.