Methods of making various fibers are provided including co-axial fibers with oppositely doped cladding and core are provide; hollow core doped silicon carbide fibers are provided; and doubly clad PIN junction fibers are provided. Additionally methods are provided for forming direct PN junctions between oppositely doped fibers are provided. Various thermoelectric generators that incorporate the aforementioned fibers are provided.

Methods of making various fibers are provided including co-axial fibers with oppositely doped cladding and core are provide; hollow core doped silicon carbide fibers are provided; and doubly clad PIN junction fibers are provided. Additionally methods are provided for forming direct PN junctions between oppositely doped fibers are provided. Various thermoelectric generators that incorporate the aforementioned fibers are provided.

An embodiment relates to an apparatus including first, second, and third electrodes and first and second transport media. The first electrode includes opposite first and second surfaces having first and second work function values, respectively. The second electrode includes a third surface facing the first surface and having a third work function value. The third electrode includes a fourth surface facing the second surface and having a fourth work function value. The third and fourth work function values are different than the first and second work function values. The third electrode is electrically coupled to the second electrode. The first transport medium is positioned between the first electrode and the second electrode and includes first nanoparticles. The second transport medium is positioned between the first electrode and the third electrode and includes second nanoparticles.

A thermoelectric device according to one embodiment of the present invention includes a first insulating layer, a first substrate disposed on the first insulating layer, a second insulating layer disposed on the first substrate, a first electrode disposed on the second insulating layer, a P-type thermoelectric leg and an N-type thermoelectric leg disposed on the first electrode, a second electrode disposed on the P-type thermoelectric leg and the N-type thermoelectric leg, a third insulating layer disposed on the second electrode, and a second substrate disposed on the third insulating layer, wherein the first insulating layer includes a first aluminum oxide layer, the first substrate is an aluminum substrate, the second substrate is a copper substrate, the first substrate is a low temperature portion, and the second substrate is a high temperature portion.

This method is for manufacturing a thermoelectric conversion module in which a first conductive member, a thermoelectric conversion element, a second conductive member are joined by joining members, the method comprising: a step for, after applying on the first conductive member a first paste including metal particles, disposing the thermoelectric conversion element on the first paste, and compressing and spreading the first paste; a step for disposing the second conductive member, after applying a second paste including metal particles in a controlled amount, on the thermoelectric conversion element, and compressing and spreading the second paste; and a step for sintering the first and the second pastes to obtain joining members.

A thermoelectric transducer includes a substrate, a thermoelectric film on the substrate, a first electrode on the substrate, and a second electrode on the substrate, the second electrode being different from the first electrode in work function. The first electrode and the second electrode are in contact with the same side of the thermoelectric film. The outer edge of the thermoelectric film is located inner than the outer edge of the substrate.

An n-type thermoelectric conversion material expressed in a chemical formula X.sub.3-xX′.sub.xT.sub.3-yCu.sub.ySb.sub.4 (0≦x<3, 0≦y<3.0, and x+y>0), the X includes one or more element(s) of Zr and Hf, the X′ includes one or more element(s) of Nb and Ta, and the T includes one or more element(s) selected from Ni, Pd, and Pt, while including at least Ni, the n-type thermoelectric conversion material expressed in the chemical formula X.sub.3-xX′.sub.xT.sub.3-yCu.sub.ySb.sub.4 has symmetry of a cubic crystal belonging to a space group I-43d.

Methods of making various fibers are provided including co-axial fibers with oppositely doped cladding and core are provide; hollow core doped silicon carbide fibers are provided; and doubly clad PIN junction fibers are provided. Additionally methods are provided for forming direct PN junctions between oppositely doped fibers are provided. Various thermoelectric generators that incorporate the aforementioned fibers are provided.

Methods of making various fibers are provided including co-axial fibers with oppositely doped cladding and core are provide; hollow core doped silicon carbide fibers are provided; and doubly clad PIN junction fibers are provided. Additionally methods are provided for forming direct PN junctions between oppositely doped fibers are provided. Various thermoelectric generators that incorporate the aforementioned fibers are provided.

A cross-plane flexible micro-TEG with hundreds of pairs of thermoelectric pillars formed via electroplating, microfabrication, and substrate transferring processes is provided herein. Typically, fabrication is conducted on a Si substrate, which can be easily realized by commercial production line. The fabricated micro-TEG transferred to the flexible layer from the Si substrate. Fabrication methods provided herein allow fabrication of main TEG components including bottom interconnectors, thermoelectric pillars, and top interconnectors by electroplating. Such flexible micro-TEGs provide high output power density due to high density of thermoelectric pillars and very low internal resistance of electroplated components. The flexible micro-TEG can achieve a power per unit area of 4.5 mW cm.sup.−2 at a temperature difference of ˜50 K, which is comparable to performance of flexible TEGs developed by screen printing. The power per unit weight of flexible TEGs described herein is as high as 60 mW g.sup.−1, which is advantageous for wearable applications.