A thermoelectric material may be composed of an isostructural pair of Heusler compounds, either a pair of full Heusler (FH) X.sub.2YZ compounds or a pair of half Heusler (HH) XYZ compounds. In the FH pair, a first compound of the pair may the formula (X1).sub.2Y1Z1, wherein X1 is selected from Fe and Co; Y1 is selected from Ti, V, Nb, Hf, and Ta; and Z1 is selected from Al, Ga, Si, and Sn and a second compound of the pair has the formula (X2).sub.2Y2Z2, wherein X2 is selected from Mn, Fe, Co, Ru, and Rh; Y2 is selected from Ti, V, Mn, Zr, Nb, Hf, and Ta; and Z2 is selected from Be, Al, Ga, Si, Ge and Sn. The first and second compounds of the pair may share two elements in common and have third elements which are different and are either isovalent or have a valency which differs by ±1. In the HH pair, a first compound of the pair may have the formula X1Y1Z1 wherein X1 is selected from Ni and Fe; Y1 is selected from Ti, V, and Nb; and Z1 is selected from Sn and Sb and a second compound of the pair has the formula X2Y2Z2 wherein X2 is selected from Fe, Ru and Pt; Y2 is selected from Ti, V, and Nb; and Z2 is selected from Sn and Sb. The first and second compounds of the pair may share two elements in common and have third elements which are different and are either isovalent or have a valency which differs by ±1. The thermoelectric material at room temperature may have a nanostructured two-phase form having a matrix phase composed of the first compound of the FH pair or the first compound of the HH pair and a nanostructured phase composed of the second compound of the FH pair or the second compound of the HH pair, respectively.

A composite including: at least one selected from a silicon oxide of the formula SiO.sub.2 and a silicon oxide of the formula SiO.sub.x wherein 0<x<2; and graphene, wherein the silicon oxide is disposed in a graphene matrix.

A composite including: at least one selected from a silicon oxide of the formula SiO.sub.2 and a silicon oxide of the formula SiO.sub.x wherein 0<x<2; and graphene, wherein the silicon oxide is disposed in a graphene matrix.

Novel compounds with thermoelectric properties are presented. The novel compounds belong to the group of phosphides. They are characterized by excellent thermoelectric properties, in particularly in the temperature range of 400° C. to 700° C. Also a production method for the production of the compounds is presented, with which the thermoelectric substances can be prepared with high yield and quality.

Metallic nanoparticles and related methods of making and using the same are described herein. An aqueous synthesis method is used to create nanoparticle cores comprising alloys of two or more metals at varying metal:metal molar ratios. In some embodiments, the nanoparticle cores described herein form a homogeneous metal alloy. Alternatively, the nanoparticle cores form a heterogeneous metal alloy. The synthesis method can further comprise forming mixed metal oxide shells on the nanoparticle cores.

A thermoelectric conversion element includes a thermoelectric member that is columnar and an insulator formed around the thermoelectric member. Particles are enclosed between the thermoelectric member and the insulator.

Systems, methods, and devices of the various embodiments provide for microfabrication of devices, such as semiconductors, thermoelectric devices, etc. Various embodiments may include a method for fabricating a device, such as a semiconductor (e.g., a silicon (Si)-based complementary metal-oxide-semiconductor (CMOS), etc.), thermoelectric device, etc., using a mask. In some embodiments, the mask may be configured to allow molecules in a deposition plume to pass through one or more holes in the mask. In some embodiments, molecules in a deposition plume may pass around the mask. Various embodiments may provide thermoelectric devices having metallic junctions. Various embodiments may provide thermoelectric devices having metallic junctions rather than junctions formed from semiconductors.

A thermoelectric element of the present invention comprises a first metal substrate, a first resin layer, a plurality of first electrodes, a plurality of P-type thermoelectric legs and a plurality of N-type thermoelectric legs, a plurality of second electrodes, a second resin layer, and a second metal substrate, wherein the first metal substrate is a low-temperature portion, the second metal substrate is a high-temperature portion, the second resin layer comprises a first layer and a second layer arranged on the first layer, the first and second layers include a silicon (Si)-based resin, and the bonding strength of the first resin layer is higher than the bonding strength of the second resin layer.

A thermoelectric element of the present invention comprises a first metal substrate, a first resin layer, a plurality of first electrodes, a plurality of P-type thermoelectric legs and a plurality of N-type thermoelectric legs, a plurality of second electrodes, a second resin layer, and a second metal substrate, wherein the first metal substrate is a low-temperature portion, the second metal substrate is a high-temperature portion, the second resin layer comprises a first layer and a second layer arranged on the first layer, the first and second layers include a silicon (Si)-based resin, and the bonding strength of the first resin layer is higher than the bonding strength of the second resin layer.

A CMOS-based sensing device includes a substrate including an etched portion and a first region located on the substrate. The first region includes a membrane region formed over an area of the etched portion of the substrate, a flow sensor formed within the membrane region and a pressure sensor formed within the membrane region.