Connection with a wiring structure can be reliably achieved, whereby a semiconductor sensor device and a semiconductor sensor device manufacturing method with increased reliability are provided. A semiconductor sensor device in which a multiple of signal lines and a sensor detection portion are disposed includes a conductive film, disposed on a substrate, that configures the signal lines and whose upper face is exposed by an aperture portion of a width smaller than a width of the signal lines, a conductive member formed on the conductive film and electrically connected to the conductive film via the aperture portion, and a wiring structure, formed on an upper face of the conductive member, of an air bridge structure that connects the signal lines or the signal lines and the sensor detection portion, wherein an upper surface of the conductive member is in contact with the wiring structure, and a side face is exposed.

The present disclosure relates to an integrated dual-sided all-in-one energy system including a plurality of vertically stacked dual-sided all-in-one energy apparatuses, each including an energy-harvesting device and an energy-storage device disposed on both sides of a substrate, and according to one embodiment of the present disclosure, an integrated dual-sided all-in-one energy system may include a plurality of dual-sided all-in-one energy apparatuses, each including an energy-harvesting device that is formed as an electrode pattern on one side of a substrate and generates electrical energy by harvesting energy based on a temperature difference between a first side and a second side and an energy-storage device that is formed on the other side of the substrate and is selectively connected to the energy-harvesting device based on the electrode pattern to store the generated electrical energy.

The invention relates to an active material comprising at least one oxygen containing compound selected from the group consisting of MgO, ZnO, ZrOCl.sub.2, ZrO.sub.2, SiO.sub.2, Bi.sub.2O.sub.3, Al.sub.2O.sub.3 and TiO.sub.2, at least one thickener additive selected from the group consisting of agar agar, xanthan gum, methylcellulose, and arabic gum, and at least one plasticizer additive, wherein the particle size of the at least one oxygen-based compound has an average diameter in the range from 10 nm to 40 μm. The invention concerns also an electric power generator (EPG) comprising at least a first electrode (11) and a second electrode (12), wherein the electric power generator comprises the active material between said electrodes (11,12).

An enclosure for a thermoelectric generator may include bonded particles of an allotrope of carbon, such as diamond particles, graphene particles, and/or carbon nanotube particles. A thermoelectric generator system may include one or more thermoelectric generators positioned at least partially within the enclosure. The enclosure may be manufactured using an additive manufacturing process which may include providing particles of an allotrope of carbon, and selectively binding a portion of the particles with a binder material. The bound particles may then be sintered to form the enclosure.

The present invention improves the performance of a thermoelectric conversion material and a thermoelectric conversion module. A thermoelectric conversion material has a mother phase containing a chimney ladder type compound comprising a first element of groups 4 to 9 and a second element of groups 13 to 15 and an additive phase existing at a grain boundary of the mother phase, the mother phase contains a third element to change a lattice constant of the chimney ladder type compound, and the additive phase contains the second element.

An object of the present invention is to provide an infrared sensor having a high TCR value, and a method for manufacturing the infrared sensor. The infrared sensor comprises a substrate, a first electrode on the substrate, a second electrode spaced from the first electrode on the substrate, and a carbon nanotube layer electrically connected with the first electrode and the second electrode, wherein the carbon nanotube layer comprises semiconducting carbon nanotubes in an amount more than 66% by mass based on the total amount of carbon nanotubes and 60% or more of the carbon nanotubes contained in the carbon nanotube layer have a diameter within a range of 0.6 to 1.5 nm and a length within a range of 100 nm to 5 μm.

A thermoelectric material may be composed of an isostructural pair of Heusler compounds, either a pair of full Heusler (FH) X.sub.2YZ compounds or a pair of half Heusler (HH) XYZ compounds. In the FH pair, a first compound of the pair may the formula (X1).sub.2Y1Z1, wherein X1 is selected from Fe and Co; Y1 is selected from Ti, V, Nb, Hf, and Ta; and Z1 is selected from Al, Ga, Si, and Sn and a second compound of the pair has the formula (X2).sub.2Y2Z2, wherein X2 is selected from Mn, Fe, Co, Ru, and Rh; Y2 is selected from Ti, V, Mn, Zr, Nb, Hf, and Ta; and Z2 is selected from Be, Al, Ga, Si, Ge and Sn. The first and second compounds of the pair may share two elements in common and have third elements which are different and are either isovalent or have a valency which differs by ±1. In the HH pair, a first compound of the pair may have the formula X1Y1Z1 wherein X1 is selected from Ni and Fe; Y1 is selected from Ti, V, and Nb; and Z1 is selected from Sn and Sb and a second compound of the pair has the formula X2Y2Z2 wherein X2 is selected from Fe, Ru and Pt; Y2 is selected from Ti, V, and Nb; and Z2 is selected from Sn and Sb. The first and second compounds of the pair may share two elements in common and have third elements which are different and are either isovalent or have a valency which differs by ±1. The thermoelectric material at room temperature may have a nanostructured two-phase form having a matrix phase composed of the first compound of the FH pair or the first compound of the HH pair and a nanostructured phase composed of the second compound of the FH pair or the second compound of the HH pair, respectively.

A thermoelectric module comprising nanostructured SnO and SnO.sub.2, and electrodes arranged between two electrical insulating substrates is described. The nanostructured SnO may be in the form of nanosheets and acting as p-type pillars of the module. The nanostructured SnO.sub.2 may be in the form of nanospheres and acting as n-type pillars of the module. This thermoelectric module is evaluated on the voltage, current, and power of the electricity generated once subjected to a temperature gradient.

A low-power phase-change memory (PCM) technology with interfacial thermoelectric heating (TEH) enhancement is provided. Embodiments described herein leverage a substantial, positive thermoelectric coefficient in PCM materials to generate additional heating or cooling at an interface with another material, enabling memory switching with a large reduction in current and power. Interfacial thermoelectric engineering is applied to a PCM cell using a special class of thermoelectric materials with large negative Seebeck coefficients (e.g., bismuth telluride (Bi.sub.2Te.sub.3), lead telluride (PbTe), lanthanum telluride (La.sub.3Te.sub.4), indium selenide (InSe), silicon-germanium (Si.sub.0.8Ge.sub.0.2)) to induce efficient heating at significantly lowered power and current.

A composite including: at least one selected from a silicon oxide of the formula SiO.sub.2 and a silicon oxide of the formula SiO.sub.x wherein 0<x<2; and graphene, wherein the silicon oxide is disposed in a graphene matrix.