Integrated thermal sensor having a housing delimiting an internal space. A support region extends through the internal space; a plurality of thermocouple elements are carried by the support region and are electrically coupled to each other. Each thermocouple element is formed by a first and a second thermoelectrically active region of a first and, respectively, a second thermoelectrically active material, the first thermoelectrically active material having a first Seeback coefficient, the second thermoelectrically active material having a second Seeback coefficient, other than the first Seeback coefficient. At least one of the first and second thermoelectrically active regions is a silicon-based material. The first and second thermoelectrically active regions of each thermocouple element are formed by respective elongated regions extending at a mutual distance into the internal space of the housing, from and transversely to the support region.

Integrated thermal sensor having a housing delimiting an internal space. A support region extends through the internal space; a plurality of thermocouple elements are carried by the support region and are electrically coupled to each other. Each thermocouple element is formed by a first and a second thermoelectrically active region of a first and, respectively, a second thermoelectrically active material, the first thermoelectrically active material having a first Seeback coefficient, the second thermoelectrically active material having a second Seeback coefficient, other than the first Seeback coefficient. At least one of the first and second thermoelectrically active regions is a silicon-based material. The first and second thermoelectrically active regions of each thermocouple element are formed by respective elongated regions extending at a mutual distance into the internal space of the housing, from and transversely to the support region.

A semiconductor structure includes, an optical component and a thermal control mechanism. The optical component includes a first main path that splits into a first side path and a second side path so that the first side path and the second side path are separated from one another. The thermal control mechanism configured to control a temperature of both the first side path and the second side path, wherein the first thermal control mechanism includes a first thermoelectric member and a second thermoelectric member that are positioned between the first side path and the second side path and the first thermoelectric member and the second thermoelectric member have opposite conductive types.

The purpose of the present invention is to provide a thermoelectric conversion element having a film which not only maintains sufficient adhesion even when exposed to a high temperature but also exhibits excellent oxidation resistance and crack resistance. The problem is solved by a thermoelectric conversion element including a thermoelectric conversion component, in which the thermoelectric conversion component contains magnesium silicide and/or manganese silicide and is covered with a film containing Si and Zr.

The purpose of the present invention is to provide a thermoelectric conversion element having a film which not only maintains sufficient adhesion even when exposed to a high temperature but also exhibits excellent oxidation resistance and crack resistance. The problem is solved by a thermoelectric conversion element including a thermoelectric conversion component, in which the thermoelectric conversion component contains magnesium silicide and/or manganese silicide and is covered with a film containing Si and Zr.

A tactile representation device is provided. The tactile representation device includes a substrate and a semiconductor temperature control assembly disposed on the substrate. The substrate includes a plurality of deformable regions and a plurality of node regions that are alternately disposed in a first direction, wherein the deformable regions are deformable but the node regions are not deformable. The semiconductor temperature control assembly includes a plurality of semiconductor temperature control units. Each of the semiconductor temperature control units includes a hot terminal electrode, a P-side electrode, an N-side electrode, a P-type semiconductor, and an N-type semiconductor. Each of the hot terminal electrodes is disposed in each of the deformable regions, and each of the P-side electrodes and each of the N-side electrodes are disposed in each of the node regions.

According to one embodiment, a power generation element includes a first conductive layer, a second conductive layer, and a first member. The first member is provided between the first conductive layer and the second conductive layer. The first member includes a first semiconductor having polarity. A gap is between the second conductive layer and the first member. A <000-1> direction of the first semiconductor is oblique to a first direction from the first conductive layer toward the second conductive layer.

The present disclosure relates to an integrated dual-sided all-in-one energy system including a plurality of vertically stacked dual-sided all-in-one energy apparatuses, each including an energy-harvesting device and an energy-storage device disposed on both sides of a substrate, and according to one embodiment of the present disclosure, an integrated dual-sided all-in-one energy system may include a plurality of dual-sided all-in-one energy apparatuses, each including an energy-harvesting device that is formed as an electrode pattern on one side of a substrate and generates electrical energy by harvesting energy based on a temperature difference between a first side and a second side and an energy-storage device that is formed on the other side of the substrate and is selectively connected to the energy-harvesting device based on the electrode pattern to store the generated electrical energy.

Methods of making various fibers are provided including co-axial fibers with oppositely doped cladding and core are provide; hollow core doped silicon carbide fibers are provided; and doubly clad PIN junction fibers are provided. Additionally methods are provided for forming direct PN junctions between oppositely doped fibers are provided. Various thermoelectric generators that incorporate the aforementioned fibers are provided.

A thermoelectric device includes active elements containing thermoelectric materials of silicon, an alloy of silicon, a metal-silicide or silicon composite and an interconnection zone consisting of a metal interconnect and a re-crystallized phase consisting of material from the active thermoelectric elements. The metal interconnect is from a metal that does not form metal silicides in a solid state, has a certain solubility for components of the thermoelectric elements in the liquid phase and a low solubility of these components in the solid phase. The active thermoelectric elements are shaped with a first and a second contact interface. The interconnection between the different thermoelectric elements consists of at least two phases of material, one of which is mainly the metallic interconnection material, the other is formed by the re-crystallized components of the thermoelectric materials.