A semiconductor structure comprises one or more semiconductor devices, each of the semiconductor devices having two or more electrical connections; one or more first conductors connected to a first electrical connection on the semiconductor device, the first conductor comprising a first material having a positive Seebeck coefficient; and one or more second conductors connected to a second electrical connection on the semiconductor device, the second conductor comprising a second material having a negative Seebeck coefficient. The first conductor and the second conductor conduct electrical current through the semiconductor device and conduct heat away from the semiconductor device.

A thermoelectric conversion device including an n-type thermoelectric converter, a p-type thermoelectric converter, a high temperature-side electrode with which one end of the n-type thermoelectric converter and one end of the p-type thermoelectric converter are put into contact, a first low temperature-side electrode in contact with another end of the n-type thermoelectric converter, and a second low temperature-side electrode in contact with another end of the p-type thermoelectric converter, wherein in the n-type thermoelectric converter, the side in contact with the high temperature-side electrode is composed of a carrier generation semiconductor containing Mg.sub.2Sn, and in the n-type thermoelectric converter, the side in contact with the first low temperature-side electrode is composed of a carrier transfer semiconductor containing Mg.sub.2Si.sub.1-xSn.sub.x, wherein 0.6?x?0.7, and a first n-type dopant.

A thermoelectric generator of compact size, having a simple structure configured for increasing the conversion efficiency of thermal energy into electric energy, so as it is possible to transform into electric current also as amount of heat per unit surface greater than thin film prior art devices, has a base silicon wafer and a cover silicon wafer, wherein the cover silicon wafer is facing said base silicon wafer in such a way that the respective top contacts are in contact and the space between the cover silicon wafer and the base silicon wafer is a space in which vacuum is made or a gas is present, in particular air.

To provide a thermoelectric conversion material having an enhanced thermoelectromotive force and a production method thereof. A thermoelectric conversion material including a matrix and a barrier material, wherein the matrix contains Mg.sub.2Si.sub.1-xSn.sub.x (x is from 0.50 to 0.80) and an n-type dopant and the barrier material contains Mg.sub.2Si.sub.1-ySn.sub.y (y is from 0 to 0.30), and a production method thereof. A thermoelectric conversion material and a production method thereof, in which the movement of minority carrier is blocked by a barrier material and the thermoelectromotive force is thereby enhanced, can be provided.

A laminate includes, on a substrate, a first buffer layer substantially made of zirconium oxide or stabilized zirconia, a second buffer layer substantially made of yttrium oxide, a metal layer substantially made of at least one among platinum, iridium, palladium, rhodium, vanadium, chromium, iron, molybdenum, tungsten, aluminum, silver, gold, copper, and nickel, and a magnesium oxide layer substantially made of magnesium oxide, in this order.

A thermionic energy converter, preferably including an anode and a cathode. An anode of a thermionic energy converter, preferably including an n-type semiconductor, one or more supplemental layers, and an electrical contact. A method for work function reduction and/or thermionic energy conversion, preferably including inputting thermal energy to a thermionic energy converter, illuminating an anode of the thermionic energy converter, thereby preferably reducing a work function of the anode, and extracting electrical power from the system.

A processing system applicable for use in semiconductor manufacturing, including a chamber including one or more sidewalls defining an internal volume, one or more heat sources configured to generate heat, a liner disposed in the internal volume and lining one or more sidewalls, and cooling channels. The processing system includes a fluid system in fluid communication with the cooling channels, the fluid system including supply lines configured to supply a fluid to the cooling channels at a first temperature, and return lines configured to flow the fluid from the cooling channels at a second temperature that is higher than the first temperature, and a fluid motor configured to move the fluid. The processing system includes an energy harnessing device configured to harness energy to produce electrical energy, the energy harnessing device comprising one or more thermoelectric generators (TEGs).

In one embodiment, an integrated circuit package includes an integrated heat spreader (IHS) that incorporates a Peltier element. The IHS may include one or more Peltier elements, which may be in a top portion of the IHS. The Peltier element(s) may be electrically connected to the package substrate through a trace on a sidewall of the IHS.

A thermoelectric conversion element includes a first electrode, a thermoelectric conversion material portion configured to convert heat into electricity, an intermediate layer arranged on the thermoelectric conversion material portion, a conductive bonding material arranged in between the intermediate layer and the first electrode to bond the first electrode to the intermediate layer, and a second electrode connected to the thermoelectric conversion material portion. The intermediate layer includes a first layer arranged on the thermoelectric conversion material portion and containing a dopant, and a second layer arranged on the first layer and configured to suppress diffusion of elements. The intermediate layer has an interface resistivity of not less than 0.0001 m?cm.sup.2 and not more than 0.5 m?cm.sup.2.

Methods of making various fibers are provided including co-axial fibers with oppositely doped cladding and core are provide; hollow core doped silicon carbide fibers are provided; and doubly clad PIN junction fibers are provided. Additionally methods are provided for forming direct PN junctions between oppositely doped fibers are provided. Various thermoelectric generators that incorporate the aforementioned fibers are provided.