An adhesive reactive to ultraviolet rays is applied to an actuator mounting portion of a suspension. An electrical conducting material is applied to a conductor and the like of the actuator mounting portion. When the adhesive is irradiated with ultraviolet rays, the viscosity of the adhesive is increased. A piezoelectric element is placed on the adhesive the viscosity of which is increased. Thereafter, the adhesive and the electrical conducting material are heated, whereby the adhesive and the electrical conducting material are cured.

A method of manufacturing a disk drive suspension includes applying an adhesive to an actuator mounting portion, increasing viscosity of the adhesive by emitting light to the adhesive applied to the actuator mounting portion, arranging the piezoelectric element on the adhesive having the increased viscosity, detecting a height of the piezoelectric element arranged on the actuator mounting portion, and correcting an irradiation condition of the light in accordance with the detected height of the piezoelectric element.

An acoustic wave device includes: a mounting substrate; a first wiring layer located on an upper surface of the mounting substrate, the first wiring layer including a first bond region and a first connection region connecting with the first bond region and having a thickness substantially equal to a thickness of the first bond region; an element substrate mounted on the mounting substrate; an acoustic wave element located on a lower surface of the element substrate; and a second wiring layer located on the lower surface of the element substrate, the second wiring layer including a second bond region and a second connection region, the second bond region directly bonding with the first bond region of the first wiring layer, the second connection region connecting the acoustic wave element with the second bond region and having a thickness substantially equal to a thickness of the second bond region.

A method for manufacturing an imaging module, including: providing a first substrate and bonding a first dielectric layer on the first substrate; patterning the first dielectric layer to form at least one first bump and at least one second bump which are mutually independent, wherein a region surrounded by the at least one second bump defines a location region of the moved element; providing a piezoelectric element, adhering one end of the piezoelectric element to the first bump through a first adhesion material and making the other end of the piezoelectric element at least partially located above the second bump; adhering the moved element to the second bump through a second adhesion material; and debonding to remove the first substrate.

A piezoelectric device includes a membrane portion including a single-crystal piezoelectric layer, an upper electrode layer, and a lower electrode layer. The upper electrode layer is on a first surface. The lower electrode layer is on a second surface facing at least a portion of the upper electrode layer sandwiching the single-crystal piezoelectric layer. The single-crystal piezoelectric layer includes piezoelectric body cleavage directions extending along a boundary line between a cleavage plane occurring when the single-crystal piezoelectric layer is cleaved and the first surface. When viewed in a vertical direction, at least a portion of an upper electrode outer edge and at least a portion of a lower electrode outer edge are non-parallel to at least one of the piezoelectric body cleavage directions.

A hybrid structure for a surface acoustic wave device comprises a useful layer of piezoelectric material having a free first surface and a second surface disposed on a support substrate that has a lower coefficient of thermal expansion than that of the useful layer. The hybrid structure further comprises a trapping layer disposed between the useful layer and the support substrate, and at least one functional interface of predetermined roughness between the useful layer and the trapping layer.

A composite substrate with suppressed pyroelectricity increase due to the heat-treatment process is provided. The composite substrate has an oxide single crystal thin film, which is a single crystal thin film of a piezoelectric material, a support substrate, and a diffusion prevention layer that is provided between the oxide single crystal thin film and the support substrate to prevent the diffusion of oxygen. The diffusion prevention layer may have any of silicon oxynitride, silicon nitride, silicon oxide, magnesium oxide, spinel, titanium nitride, tantalum, tantalum nitride, tungsten nitride, aluminum oxide, silicon carbide, tungsten boron nitride, titanium silicon nitride, and tungsten silicon nitride.

A bonded body includes a supporting substrate; a piezoelectric material substrate composed of a material selected from the group consisting of lithium niobate, lithium tantalate and lithium niobate-lithium tantalate; and a bonding layer bonding the supporting substrate and the piezoelectric material substrate and contacting a main surface of the piezoelectric material substrate. It is provided that at least one of a bonding surface of the supporting substrate and a bonding surface of the piezoelectric material substrate is measured by X-ray reflectivity method and that 1 is assigned to a signal intensity in the case of total reflection. A relative intensity I of a reflected light from the bonding surface is approximated by the following formula (1) in a range of 1.0×10.sup.−4 or larger and 1.0×10.sup.−1 or smaller.

[00001]$\begin{array}{cc}I={a\left(2\theta \right)}^{-b}& \left(1\right)\end{array}$

A bonded body includes a supporting substrate; a piezoelectric material substrate composed of a material selected from the group consisting of lithium niobate, lithium tantalate and lithium niobate-lithium tantalate; and a bonding layer bonding the supporting substrate and piezoelectric material substrate and contacting a main surface of the piezoelectric material substrate. Provided that at least one of a bonding surface of the supporting substrate and a bonding surface of the piezoelectric material substrate is measured by spectral ellipsometry and that Δ is assigned to a difference of phases of p-polarized light and s-polarized light of a reflected light, a difference of the maximum and minimum values of the difference Δ of the phases in a wavelength range of 400 nm to 760 nm is 70° or lower.

An interventional device (100, 200, 300) includes an elongate shaft (101) having a longitudinal axis A-A′, an ultrasound transducer (102), an adhesive layer (103), and a protective tube (104) formed from a protective tube (104) formed from a heat-shrink material. The ultrasound transducer (102) is disposed on the elongate shaft (101) such that the ultrasound transducer (102) has an axial extent L along the longitudinal axis A-A′, At least along the axial extent L of the adhesive layer (103) is disposed between the ultrasound transducer (102) and the protective tube (104) surrounds the ultrasound transducer (102) and the adhesive layer (103) is disposed between the ultrasound transducer (102) and the protective tube (104).