A method and structure for a transfer process for an acoustic resonator device. In an example, a bulk acoustic wave resonator (BAWR) with an air reflection cavity is formed. A piezoelectric thin film is grown on a crystalline substrate. A first patterned electrode is deposited on the surface of the piezoelectric film. An etched sacrificial layer is deposited over the first electrode and a planarized support layer is deposited over the sacrificial layer, which is then bonded to a substrate wafer. The crystalline substrate is removed and a second patterned electrode is deposited over a second surface of the film. The sacrificial layer is etched to release the air reflection cavity. Also, a cavity can instead be etched into the support layer prior to bonding with the substrate wafer. Alternatively, a reflector structure can be deposited on the first electrode, replacing the cavity.

The present invention relates to compositions obtained by mixing specific electroactive fluoro-terpolymers and specific electroactive fluorinated copolymers. The invention also concerns liquid formulations (inks) that can be used through conventional processing technologies for printed electronics and microelectronics in a safe environment, based on these compositions. Another aspect of this invention are the films manufactured using these formulations, and the devices comprising at least one layer of these films.

The present invention relates to compositions obtained by mixing specific electroactive fluoro-terpolymers and specific electroactive fluorinated copolymers. The invention also concerns liquid formulations (inks) that can be used through conventional processing technologies for printed electronics and microelectronics in a safe environment, based on these compositions. Another aspect of this invention are the films manufactured using these formulations, and the devices comprising at least one layer of these films.

Growth of single crystals of lead zirconate titanate (PZT) and other perovskites is accomplished by liquid phase epitaxy onto a substrate of suitable structural and lattice parameter match. A solvent and specific growth conditions for stable growth are required to achieve the desired proportions of Zr and Ti.

The present invention relates to a zinc oxide-based piezoelectric device, utilisable both as a sensor and as an actuator.

More in particular, the present invention relates to a piezoelectric device (1, 101) comprising at least two carbon fibre crossed yarns (2a, 2b; 102a, 102b), at the intersection of which a zinc oxide layer (3, 103) in nanorod form is arranged, wherein an end (4a, 4b) of each of said yarns (2a, 2b; 102a, 102b) is connected to an operative unit (5).

Provided is a piezoelectric element that includes a substrate having a lower electrode, a piezoelectric film, and an upper electrode, in that order, and an insulating film that covers at least a side surface of the piezoelectric film, wherein one of the side surfaces of the piezoelectric film has a plurality of step portions, each of the plurality of step portions has a first side surface and a second side surface, an angle of inclination of the first side surface with respect to an upper surface of the substrate is different from an angle of inclination of the second side surface with respect to the upper surface of the substrate, and an angle between the first side surface and the second side surface is 90 or more.

Provided is a piezoelectric element that includes a substrate having a lower electrode, a piezoelectric film, and an upper electrode, in that order, and an insulating film that covers at least a side surface of the piezoelectric film, wherein one of the side surfaces of the piezoelectric film has a plurality of step portions, each of the plurality of step portions has a first side surface and a second side surface, an angle of inclination of the first side surface with respect to an upper surface of the substrate is different from an angle of inclination of the second side surface with respect to the upper surface of the substrate, and an angle between the first side surface and the second side surface is 90 or more.

The present invention pertains to a fluoropolymer composition, to a process for the manufacture of said fluoropolymer composition and to uses of said fluoropolymer composition in various applications, in particular to uses of fluoropolymer films obtainable therefrom in electrical or electronic devices.

A method of manufacturing an electronic device including a film, including the steps of forming at least one layer of a solution including a solvent and a compound including a polymer selected from the group including poly(vinylidene fluoride-trifluoroethylene-chlorofluoroethylene) (P(VDF-TrFE-CFE)), poly(vinylidene fluoride-trifluoroethylene-chlorotrifluoroethylene) (P(VDF-TrFE-CTFE)) and a mixture of these compounds, the molecular rate of chlorine in the copolymer being greater than or equal to 3%; and irradiating at least the layer with pulses of at least one ultraviolet radiation.

A method of manufacturing a piezoelectric element includes: forming a patterned mask layer over a substrate, in which the patterned mask layer has an opening exposing a portion of the substrate; forming a piezoelectric element in the opening; and removing the patterned mask layer to obtain the piezoelectric element, in which the piezoelectric element has a central portion and a peripheral portion adjacent to the central portion, and the peripheral portion has a maximum height greater than a height of the central portion.