The invention relates to a composition comprising at least one electroactive fluorinated terpolymer, and at least one second polymer compatible with the electroactive fluorinated terpolymer and having a glass transition temperature lower than that of the electroactive fluorinated terpolymer. The invention also relates to a method for producing said composition, and to a device such as an actuator comprising a substrate and a film of the above-mentioned composition.

The disclosed embodiments are generally directed to optical systems. The optical systems may include a proximal lens that may transmit light toward an eye of a user. The optical systems may also include a distal lens that may, in combination with the proximal lens, correct for at least a portion of a refractive error of the eye of the user. The optical systems may further include a selective transmission interface. The selective transmission interface may couple the proximal lens to the distal lens, transmits light having a selected property, and does not transmit light that does not have the selected property. The optical system can also include an accommodative lens, such as a liquid lens. Various other methods, systems, and computer-readable media are also disclosed.

Embodiments described herein involve methods of forming an interactive card with indicators on a substrate. A plurality of indicators are formed on the substrate by way of a printed electronics process. A plurality of displaceable regions of piezoelectric material are formed on the substrate by way of a printed electronics process. Electrical interconnections are formed on the substrate by way of a printed electronics process, the electrical interconnections connecting an indicator and an associated displaceable region of piezoelectric material such that displacement of the associated displaceable region of piezoelectric material generates a voltage therein that is provided to the indicator in order to actuate the indicator and thereby indicate displacement of the associated displaceable region of piezoelectric material.

There is provided a piezoelectric element which includes a first electrode which is formed on a substrate, a piezoelectric layer which is formed on the first electrode, and is formed from a compound oxide having an ABO.sub.3 type perovskite structure in which potassium (K), sodium (Na), niobium (Nb), and manganese (Mn) are provided, and a second electrode which is formed on the piezoelectric layer. The manganese includes bivalent manganese (Mn.sup.2+), trivalent manganese (Mn.sup.3+), and tetravalent manganese (Mn.sup.4+). A molar ratio (Mn.sup.2+/Mn.sup.3++Mn.sup.4+) of the bivalent manganese to a sum of the trivalent manganese and the tetravalent manganese is equal to or greater than 0.31.

A method and structure for a transfer process for an acoustic resonator device. In an example, a bulk acoustic wave resonator (BAWR) with an air reflection cavity is formed. A piezoelectric thin film is grown on a crystalline substrate. Patterned electrodes are deposited on the surface of the piezoelectric film. An etched sacrificial layer is deposited over the electrodes and a planarized support layer is deposited over the sacrificial layer. The device can include a dielectric protection layer (DPL) that protects the piezoelectric layer from etching processes that can produce rough surfaces and reduces parasitic capacitance around the perimeter of the resonator when the DPL's dielectric constant is lower than that of the piezoelectric layer. The DPL can be configured between the top electrode and the piezoelectric layer, between the bottom electrode and the piezoelectric layer, or both.

A method and structure for a transfer process for an acoustic resonator device. In an example, a bulk acoustic wave resonator (BAWR) with an air reflection cavity is formed. A piezoelectric thin film is grown on a crystalline substrate. Patterned electrodes are deposited on the surface of the piezoelectric film. An etched sacrificial layer is deposited over the electrodes and a planarized support layer is deposited over the sacrificial layer. The device can include a dielectric protection layer (DPL) that protects the piezoelectric layer from etching processes that can produce rough surfaces and reduces parasitic capacitance around the perimeter of the resonator when the DPL's dielectric constant is lower than that of the piezoelectric layer. The DPL can be configured between the top electrode and the piezoelectric layer, between the bottom electrode and the piezoelectric layer, or both.

Various systems, devices, and methods for a vehicle smart brake pad comprising a sensor such as a force sensing device, and a production process thereof. For example, a production process of a vehicle brake pad can include the following steps in time sequence: applying an electrical circuit a support plate; screen printing on the electrical circuit of at least a first electrode; screen printing on the at least first electrode of a sheet of piezoelectric material; screen printing on the sheet of at least a second electrode; applying a friction pad on the support plate; and bulk polarizing the sheet of piezoelectric material by a supply of power to the at least first and second electrodes.

A method and structure for a transfer process for an acoustic resonator device. In an example, a bulk acoustic wave resonator (BAWR) with an air reflection cavity is formed. A piezoelectric thin film is grown on a crystalline substrate. One or more patterned electrodes are deposited on the surface of the piezoelectric film. An etched sacrificial layer is deposited over the one or more electrodes and a planarized support layer is deposited over the sacrificial layer. The support layer is etched to form one or more cavities overlying the electrodes to expose the sacrificial layer. The sacrificial layer is etched to release the cavities around the electrodes. Then, a cap layer is fusion bonded to the support layer to enclose the electrodes in the support layer cavities.

A method and structure for a transfer process for an acoustic resonator device. In an example, a bulk acoustic wave resonator (BAWR) with an air reflection cavity is formed. A piezoelectric thin film is grown on a crystalline substrate. A first patterned electrode is deposited on the surface of the piezoelectric film. An etched sacrificial layer is deposited over the first electrode and a planarized support layer is deposited over the sacrificial layer, which is then bonded to a substrate wafer. The crystalline substrate is removed and a second patterned electrode is deposited over a second surface of the film. The sacrificial layer is etched to release the air reflection cavity. Also, a cavity can instead be etched into the support layer prior to bonding with the substrate wafer. Alternatively, a reflector structure can be deposited on the first electrode, replacing the cavity.

An electroactive device may include (1) an electroactive polymer element having a first surface and a second surface opposing the first surface, (2) a primary electrode abutting the first surface, and (3) a secondary electrode abutting the second surface. The electroactive polymer element may be transformed from an initial state to a deformed state and may achieve substantially uniform strain by the application of an electrostatic field produced by a potential difference between the electrodes. Various other devices, systems, and methods are also disclosed.