The present disclosure relates to a method of forming a device. The method includes depositing a first layer of getter material on a substrate. A first electrode is formed in a first conductive layer deposited on the first layer of getter material. An insulator element is formed in a piezoelectric layer deposited on the first electrode. A second electrode is formed in a second conductive layer deposited on the insulator element. A first input-output electrode is formed to be conductively connected to the first layer of getter material and a second input-output electrode is formed to be conductively connected to the second electrode.

A method for manufacturing a monocrystalline piezoelectric material layer includes providing a donor substrate made of the piezoelectric material, providing a receiving substrate, transferring a so-called “seed layer” of the donor substrate onto the receiving substrate, and using epitaxy of the piezoelectric material on the seed layer until the desired thickness for the monocrystalline piezoelectric layer is obtained.

A method of manufacture and resulting structure for a single crystal electronic device with an enhanced strain interface region. The method of manufacture can include forming a nucleation layer overlying a substrate and forming a first and second single crystal layer overlying the nucleation layer. These first and second layers can be doped by introducing one or more impurity species to form the strained single crystal layers. The first and second strained layers can be aligned along the same crystallographic direction to form a strained single crystal bi-layer having an enhanced strain interface region. Using this enhanced single crystal bi-layer to form active or passive devices results in improved physical characteristics, such as enhanced photon velocity or improved density charges.

A method of manufacture and resulting structure for a single crystal electronic device with an enhanced strain interface region. The method of manufacture can include forming a nucleation layer overlying a substrate and forming a first and second single crystal layer overlying the nucleation layer. These first and second layers can be doped by introducing one or more impurity species to form the strained single crystal layers. The first and second strained layers can be aligned along the same crystallographic direction to form a strained single crystal bi-layer having an enhanced strain interface region. Using this enhanced single crystal bi-layer to form active or passive devices results in improved physical characteristics, such as enhanced photon velocity or improved density charges.

A method for manufacturing an AlN-based laminate includes: forming on or above a substrate 210 a single-crystalline electrode layer 230 containing a metal element; and forming an AlN-based piezoelectric layer 240 on the electrode layer 230 by sputtering. Forming the piezoelectric layer 240 includes applying a pulse voltage to a target during the sputtering at a duty ratio of not more than 4% and at an average power density during pulse application of from 200 W/cm.sup.2 to 2500 W/cm.sup.2.

In a non-limiting embodiment, a device may include a substrate, and a hybrid active structure disposed over the substrate. The hybrid active structure may include an anchor region and a free region. The hybrid active structure may be connected to the substrate at least at the anchor region. The anchor region may include at least a segment of a piezoelectric stack portion. The piezoelectric stack portion may include a first electrode layer, a piezoelectric layer over the first electrode layer, and a second electrode layer over the piezoelectric layer. The free region may include at least a segment of a mechanical portion. The piezoelectric stack portion may overlap the mechanical portion at edges of the piezoelectric stack portion.

There are provided a piezoelectric film-attached substrate and piezoelectric element, which include, on a substrate in the following order, a lower electrode layer, a piezoelectric film containing a perovskite-type oxide containing lead as a main component of an A site, and a buffer layer, where the buffer layer contains a metal oxide represented by M.sub.dN.sub.1-dO.sub.e. Here, M consists of one or more metal elements substitutable for the A site of the perovskite-type oxide and has an electronegativity of less than 0.95. In a case of 0<d<1 and in a case where the electronegativity is denoted by X, 1.41X−1.05≤d≤A1.Math.exp(−X/t1)+y0, where A1=1.68×10.sup.12, t1=0.0306, and y0=0.59958.

A piezoelectric film on a substrate is provided comprising an aluminum nitride (AlN) layer, and a Al.sub.1-x(J).sub.xN compound layer comprising a graded section with a lower (J) composition, x, adjacent to the AlN layer and a higher (J) composition, x, located away from the AlN layer, the said (J) being a singular element or a binary compound. A method for forming such a piezoelectric film is also provided. A surface acoustic wave resonator comprising such a piezoelectric film, a surface acoustic wave filter comprising such a piezoelectric film, a bulk acoustic wave resonator comprising such a piezoelectric film, and a bulk acoustic wave filter comprising such a piezoelectric film are also provided.

A piezoelectric film on a substrate is provided comprising an aluminum nitride (AlN) layer, and a Al.sub.1-x(J).sub.xN compound layer comprising a graded section with a lower (J) composition, x, adjacent to the AlN layer and a higher (J) composition, x, located away from the AlN layer, the said (J) being a singular element or a binary compound. A method for forming such a piezoelectric film is also provided. A surface acoustic wave resonator comprising such a piezoelectric film, a surface acoustic wave filter comprising such a piezoelectric film, a bulk acoustic wave resonator comprising such a piezoelectric film, and a bulk acoustic wave filter comprising such a piezoelectric film are also provided.

A multilayer structure and a piezoelectric device using the same, which have satisfactory crystal orientation even in the submicron region of the thickness of a piezoelectric layer, are provided. The multilayer structure includes a first wurtzite thin film, a first hexagonal metal layer, a first electrode layer, a second hexagonal metal layer, and a second wurtzite thin film stacked in this order. The first electrode layer is formed of a metallic material having an acoustic impedance higher than that of the second wurtzite thin film.