A film structure comprises a substrate and a buffer film formed on the substrate. The substrate is a 36° to 48° rotated Y-cut Si substrate, or the substrate is a SOI substrate including a base substance made of the 36° to 48° rotated Y-cut Si substrate, an insulating layer on the base substance, and a SOI layer made of a Si film on the insulating layer, and a mirror index of a crystal plane of an upper surface of the SOI layer is equal to a mirror index of a crystal plane of an upper surface of the base substance. The buffer film includes ZrO.sub.2 epitaxially grown on the substrate.

A film structure comprises a substrate and a buffer film formed on the substrate. The substrate is a 36° to 48° rotated Y-cut Si substrate, or the substrate is a SOI substrate including a base substance made of the 36° to 48° rotated Y-cut Si substrate, an insulating layer on the base substance, and a SOI layer made of a Si film on the insulating layer, and a mirror index of a crystal plane of an upper surface of the SOI layer is equal to a mirror index of a crystal plane of an upper surface of the base substance. The buffer film includes ZrO.sub.2 epitaxially grown on the substrate.

A system is for detecting a location of a touch input on a surface of a propagating medium. The system includes a transmitter coupled to the propagating medium and configured to emit a signal. The signal has been allowed to propagate through the propagating medium and the location of the touch input on the surface of the propagating medium is detected at least in part by detecting an effect of the touch input on the signal that has been allowed to propagate through the propagating medium. The system includes a piezoresistive sensor coupled to the propagating medium. The piezoresistive sensor is configured to at least detect a force, pressure, or applied strain of the touch input on the propagating medium.

Provided is a dielectric thin film including a metal oxide. The metal oxide includes bismuth, sodium, barium, and titanium, at least a part of the metal oxide is a tetragonal crystal having a perovskite structure, and a (100) plane of at least a part of the tetragonal crystal is oriented in a normal direction do of a surface of the dielectric thin film 3.

A residual stress in a PZT type ferroelectric film 12 formed on a substrate body 11 by a sol-gel process is −14 MPa to −31 MPa, and the ferroelectric film 12 is crystal oriented in a (100) plane.

An array of piezoelectric micromachined ultrasonic transducers (PMUTs) includes a first piezoelectric layer and a second piezoelectric layer, a dielectric layer positioned between the first piezoelectric layer and the second piezoelectric layer, and a plurality of conductive layers positioned on opposing surfaces of the first piezoelectric layer and opposing surfaces of the second piezoelectric layer. A plurality of isolation trenches extend through the dielectric layer and at least a portion of conductive layers of the plurality of conductive layers, where the plurality of isolation trenches are positioned between neighboring PMUTs of the array of PMUTs such that the neighboring PMUTs are electrically isolated, and wherein the plurality of isolation trenches relieve stress in the dielectric layer.

For a piezoelectric device, an optical characteristic and/or a piezoelectric characteristic is improved. A piezoelectric device has a first electrode layer, a second electrode layer, and a piezoelectric layer provided between the first electrode layer and the second electrode layer, wherein the piezoelectric layer is formed of a wurtzite crystal material as a main component, to which one or more elements is/are added, said one or more elements being transparent when turned into an oxide, and wherein a haze value is 3% or less, and transmittance with respect to light having a wavelength of 380 nm is 50% or more.

An element includes an upper electrode, a flexible intermediate layer, and a lower electrode. The upper electrode having an uneven structure. The lower electrode is closely attached to the intermediate layer. The element is configured to generate an electrical signal due to contact and separation between the upper electrode and the intermediate layer. The lower electrode is configured to take a shape fittable to the uneven structure when the upper electrode and the intermediate layer come into contact with each other.

To obtain a piezoelectric film having excellent piezoelectric properties. An aspect of the present invention is a piezoelectric film having a crystal oriented in the c-axis direction and a crystal oriented in the a-axis direction, in which, when denoting the amount of a (004) component of the crystal oriented in the c-axis direction by C and denoting the amount of a (400) component of the crystal oriented in the a-axis direction by A, the piezoelectric film satisfies a formula 1 below.
C/(A+C)≧0.1  formula 1

A vibrating body includes a substrate, a piezoelectric element comprising a piezoelectric layer and electrode layers and joined to the substrate, and a ceramic layer between the substrate and the piezoelectric element. The ceramic layer comprises a first region and a second region which is adjacent to the first region in a direction perpendicular to a thickness direction of the ceramic layer. The first region has a square shape, each side of the first region having a length equal to a thickness of the ceramic layer, the second region has a square shape, each side of the second region having the length equal to the thickness of the ceramic layer, and a difference between a porosity of the first region and a porosity of the second region is not greater than 15%.