A piezoelectric element includes a lower electrode layer, an upper electrode layer, an orientation control layer disposed between the lower electrode layer and the upper electrode layer, and a piezoelectric layer formed on an upper surface of the orientation control layer. The piezoelectric layer is oriented in a (001) plane or a (100) plane and has a perovskite structure including Pb(Zn.sub.1/3, Nb.sub.2/3)O.sub.3. The orientation control layer has a perovskite structure, is oriented in the (001) plane or the (100) plane, and contains a part of components forming the piezoelectric layer, as an additive.

A piezoelectric element includes a lower electrode layer, an upper electrode layer, an orientation control layer disposed between the lower electrode layer and the upper electrode layer, and a piezoelectric layer formed on an upper surface of the orientation control layer. The piezoelectric layer is oriented in a (001) plane or a (100) plane and has a perovskite structure including Pb(Mg.sub.1/3, Nb.sub.2/3)O.sub.3. The orientation control layer has a perovskite structure, is oriented in the (001) plane or the (100) plane, and contains a part of components forming the piezoelectric layer, as an additive.

A piezoelectric laminate and a piezoelectric element, including on a substrate in the following order, a lower electrode layer, and a piezoelectric film, in which a region of the lower electrode layer, the region being in contact with the piezoelectric film, is constituted of a metal layer, where a (111) plane of the metal layer has an inclination of 1° or more with respect to a surface of the substrate, and the piezoelectric film contains a perovskite-type oxide containing Pb.

A piezoelectric element includes: a first electrode formed at a vibration plate; a seed layer formed at the first electrode; a piezoelectric film containing potassium, sodium, and niobium and formed at the seed layer; and a second electrode formed at the piezoelectric film. The piezoelectric film contains lithium and one or more first transition elements. The seed layer contains bismuth. When the piezoelectric film is divided into two equal parts in a stacking direction, the second electrode side is defined as a first region, and the first electrode side is defined as a second region, a bismuth intensity obtained by SIMS measurement at a boundary between the first region and the second region is equal to or less than 1/500 of a maximum bismuth intensity obtained by the SIMS measurement of the piezoelectric film.

A material deposition method comprising: preparing a precursor solution of Pb(Zr.sub.x,Ti.sub.1-x)O.sub.3 using 1-methoxy-2-propanol as a solvent and acetylacetone as a modifier; and forming a seed layer for a electroactive film by spin coating the precursor solution on a substrate. The electroactive film can be PZT, PZO or BFO, spin-coated or inkjet printed on the seed layer. Experience shows pure orientation for the piezoelectric film thanks to the use of 1-methoxy-2-propanol when preparing the seed layer. This orientation is attributed to the formation of nano crystals on the seed layer constituting a pre-crystallization.

A piezoelectric element includes a lower electrode layer, an upper electrode layer, an orientation control layer disposed between the lower electrode layer and the upper electrode layer, and a piezoelectric layer formed on an upper surface of the orientation control layer. The piezoelectric layer is oriented in a (001) plane or a (100) plane and is composed of Pb(Zr, Ti)O.sub.3 containing Mn as an additive. The orientation control layer has a perovskite structure, is oriented in the (001) plane or the (100) plane, and contains a part of components forming the piezoelectric layer, as an additive.

A piezoelectric element includes a lower electrode layer, an upper electrode layer, an orientation control layer disposed between the lower electrode layer and the upper electrode layer, and a piezoelectric layer formed on an upper surface of the orientation control layer. The piezoelectric layer is oriented in a (001) plane or a (100) plane and is composed of Pb(Zr, Ti)O.sub.3 containing Mn as an additive. The orientation control layer has a perovskite structure, is oriented in the (001) plane or the (100) plane, and contains a part of components forming the piezoelectric layer, as an additive.

A bulk-acoustic wave resonator includes a resonator, including a first electrode, a piezoelectric layer, and a second electrode sequentially stacked on a substrate; and an insertion layer disposed below the piezoelectric layer, and configured to partially elevate the piezoelectric layer and the second electrode, wherein the insertion layer may be formed of a material containing silicon (Si), oxygen (O), and nitrogen (N).

Activity of piezoelectric material dimension and electrical properties can be changed with an applied stress. These variations are translated to a change in capacitance of the structure. Use of capacitance-voltage measurements for the extraction of double piezoelectric thin film material deposited at the two faces of a flexible steel sheet is described. Piezoelectric thin film materials are deposited using RF sputtering techniques. Gamry analyzer references 3000 is used to collect the capacitance-voltage measurements from both layers. A developed algorithm extracts directly the piezoelectric coefficients knowing film thickness, applied voltage, and capacitance ratio. The capacitance ratio is the ratio between the capacitances of the film when the applied field in antiparallel and parallel to the poling field direction, respectively. Piezoelectric bulk ceramic is used for calibration and validation by comparing the result with the reported values from literature. Extracted values using the current approach match well values extracted by existing methods.

A film structure includes a substrate (11) which is a silicon substrate including an upper surface (11a) composed of a (100) plane, an alignment film (12) which is formed on the upper surface (11a) and includes a zirconium oxide film which has a cubic crystal structure and is (100)-oriented, and a conductive film (13) which is formed on the alignment film (12) and includes a platinum film which has a cubic crystal structure and is (100)-oriented. An average interface roughness of an interface (IF1) between the alignment film (12) and the conductive film (13) is greater than an average interface roughness of an interface (IF2) between the substrate (11) and the alignment film (12).