A high intensity focused ultrasound (HIFU) probe according to an embodiment of the present invention includes: a transducer module including a plurality of transducer elements generating ultrasound by receiving electrical signals; and a circuit providing a driving signal to the plurality of transducer elements based on a control signal received from a control system, in which the plurality of transducer elements having a concave shape in a first axial direction, which is a focusing direction of ultrasound, are arranged in an array in a second axial direction perpendicular to a first axis with a kerf interposed therebetween, and at least two different elements of the plurality of transducer elements are configured to emit high intensity focused ultrasound at different times based on the driving signal.

A high intensity focused ultrasound (HIFU) probe according to an embodiment of the present invention includes: a transducer module including a plurality of transducer elements generating ultrasound by receiving electrical signals; and a circuit providing a driving signal to the plurality of transducer elements based on a control signal received from a control system, in which the plurality of transducer elements having a concave shape in a first axial direction, which is a focusing direction of ultrasound, are arranged in an array in a second axial direction perpendicular to a first axis with a kerf interposed therebetween, and at least two different elements of the plurality of transducer elements are configured to emit high intensity focused ultrasound at different times based on the driving signal.

Various methods and systems are provided for a multi-frequency transducer array. In one example, the transducer array includes a plurality of elements formed of two or more piezoelectric materials, the two or more piezoelectric materials having different resonance frequencies. Furthermore, the two or more piezoelectric materials may be oriented independent of a dicing pattern of the transducer array, the dicing pattern defining the plurality of elements.

Various methods and systems are provided for a multi-frequency transducer array. In one example, the transducer array includes a plurality of elements formed of two or more piezoelectric materials, the two or more piezoelectric materials having different resonance frequencies. Furthermore, the two or more piezoelectric materials may be oriented independent of a dicing pattern of the transducer array, the dicing pattern defining the plurality of elements.

A method of manufacturing a substrate for an acoustic wave device includes: a substrate joining step of joining a piezoelectric material layer to a surface on one side of a support substrate; a grinding step of grinding the piezoelectric material layer; a removal amount map forming step of measuring in-plane thickness of the piezoelectric material layer by an optical thickness meter, and calculating a removal amount for the piezoelectric material layer for adjusting thickness variability of the piezoelectric material layer to or below a threshold on the basis of each coordinate in the plane, to form a removal amount map; a laser processing step of applying a pulsed laser beam of such a wavelength as to be absorbed in the piezoelectric material layer, to selectively remove the piezoelectric material layer, based on the removal amount map; and a polishing step of polishing the surface of the piezoelectric material layer.

A composite substrate includes a single crystal support substrate containing first element as a main component; an oxide single crystal layer provided on the single crystal support substrate and containing a second element (excluding oxygen) as a main component; and an amorphous layer provided in between the single crystal support substrate and the oxide single crystal layer and containing a first element, a second element, and Ar, the amorphous layer having a first amorphous region in which proportion of the first element is higher than proportion of the second element, and a second amorphous region in which the proportion of the second element is higher than the proportion of the first element, concentration of Ar contained in the first amorphous region being higher than concentration of Ar contained in the second amorphous region and being 3 atom % or more.

It is formed, over a supporting body made of a ceramic, a bonding layer composed of one or more material selected from the group consisting of mullite, alumina, tantalum pentoxide, titanium oxide and niobium pentoxide. Neutralized beam is irradiated onto a surface of the bonding layer to activate the surface of the bonding layer. The surface of the bonding layer and the piezoelectric single crystal substrate are bonded by direct bonding.

A bonded body includes a supporting body composed of a ceramic, a bonding layer provided over a surface of the supporting body and composed of one or more material selected from the group consisting of mullite, alumina, tantalum pentoxide, titanium oxide and niobium pentoxide, and a piezoelectric single crystal substrate bonded with the bonding layer. The surface of the supporting body has an arithmetic average roughness Ra of 0.5 nm or larger and 5.0 nm or smaller.

A bonding layer 3 is formed over a piezoelectric material substrate, and the bonding layer 3 is made of or more material selected from the group consisting of silicon nitride, aluminum nitride, alumina, tantalum pentoxide, mullite, niobium pentoxide and titanium oxide. Neutralized beam A is irradiated onto a surface 4 of the bonding layer and a surface of a supporting body to activate the surface of the bonding layer and the surface of the supporting body. The surface of the bonding layer and the surface of the supporting body are bonded by direct bonding.

A manufacturing method for an ultrasonic fingerprint sensor is provided. The method may include: preparing a sintered ceramic element under incomplete sintering conditions; forming a processed ceramic element by cutting a first surface of the sintered ceramic element along a first direction in pre-designated intervals up to such a depth that leaves a remainder region at a second surface and cutting the second surface of the sintered ceramic element along a second direction perpendicular to the first direction in pre-designated intervals up to such a depth that leaves a remainder region at the first surface; sintering the processed ceramic element under complete sintering conditions; filling an insulation material into troughs formed in the processed ceramic element by the cutting processes; and polishing the first surface and second surface to remove the remainder regions such that piezoelectric rods are exposed while arranged in an array form.