H10N30/088

CHIP COMPONENT MANUFACTURING METHOD

Provided is a chip component manufacturing method which enables a plurality of chip pieces to be handled while being pasted to a sheet, and in which it is possible to apply at least a surface treatment to a plurality of chip pieces while being pasted to a sheet. This chip component manufacturing method comprises: a step for retaining a green sheet or the like on a carrier sheet; a step for cutting, together with a portion of the carrier sheet, the green sheet or the like retained on the carrier sheet; a step for removing, together with a portion of the carrier sheet, at least a dummy portion of the green sheet or the like that has been cut, so as to leave a plurality of chip pieces on the carrier sheet; and a step for applying at least a surface treatment to lateral surface portions of the plurality of chip pieces that have become exposed due to the removing while the plurality of chip pieces are being retained on the carrier sheet.

LIGHT SCANNING APPARATUS
20200209616 · 2020-07-02 · ·

A light scanning apparatus includes a mirror supporting portion having a mirror on a front surface, an actuator configured to driving the mirror supporting portion, a fixed frame disposed around the mirror supporting portion and the actuator, and at least one rib disposed on a back surface side of the mirror supporting portion or the actuator, wherein the rib includes a straight portion and a contact portion having a width wider than a width of the straight portion.

WAFER LEVEL ULTRASONIC CHIP MODULE AND MANUFACTURING METHOD THEREOF

A wafer level ultrasonic chip module includes a substrate, a composite layer, a conducting material, and a base material. The substrate has a through slot that passes through an upper surface of the substrate and a lower surface of the substrate. The composite layer includes an ultrasonic body and a protective layer. A lower surface of the ultrasonic body is exposed from the through slot. The protective layer covers the ultrasonic body and a partial upper surface of the substrate. The protective layer has an opening, from which a partial upper surface of the ultrasonic body is exposed. The conducting material is in contact with the upper surface of the ultrasonic body. The base material covers the through slot, such that a space is formed among the through slot, the lower surface of the ultrasonic body and an upper surface of the base material.

ULTRASOUND TRANSDUCER AND METHOD FOR WAFER LEVEL FRONT FACE ATTACHMENT

Methods and systems are provided for a single element ultrasound transducer. In one embodiment, the ultrasound transducer comprises: a piezoelectric layer, a matching layer, one surface of the matching layer is electrically coupled to a top surface of the piezoelectric layer and another surface of the matching layer forms a signal pad within a front face of the ultrasound transducer, and a base package electrically coupled to a bottom surface of the piezoelectric layer, the base package extending horizontally and laterally to form a back face of the ultrasound transducer parallel to the front face of the ultrasound transducer, and extending vertically relative to the back face of the ultrasound transducer to form a ground pad within the front face of the ultrasound transducer. In this way, the transducer can work robustly and may be automatically mounted to a flat substrate with printed circuit.

ULTRASONIC BIOMETRIC SENSOR WITH TRANSMIT AND RECEIVE SIDE BEAMFORMING
20200160018 · 2020-05-21 ·

The described architecture and techniques may provide for ultrasonic sensing using transmit and receive beamforming using an ultrasonic sensor with a continuous (e.g., non-segmented) blanket layer of piezo-sensitive material between a common electrode and an array of electrodes. For example, an ultrasonic biometric sensor may utilize a continuous blanket layer of piezo-sensitive material (e.g., such as a continuous copolymer, in lieu of an array of piezoelectric elements) between a common electrode and an electrode array for transmit and receive beamforming. The electrode array may employ individual transmission cycle control for each electrode to perform aspects of ultrasonic transmit and receive beamforming for biometric sensing/imaging. The continuous copolymer (e.g., or other blanket layer of piezo-sensitive material) may provide for a thin layer, between the common electrode and the electrode array, with desirable material properties to isolate each pixel from neighboring pixels and enable effective ultrasonic transmit and receive beamforming.

PIEZOELECTRIC DEVICE COMPRISING FLEXIBLE SINGLE CRYSTALLINE PIEZOELECTRIC LINBO3 AND/OR LITAO3 FILMS INTEGRATED ON FLEXIBLE SUBSTRATE AND METHODS FOR PRODUCING THE SAME

The invention relates to a piezoelectric device comprising flexible single crystalline piezoelectric LiNbO3 and/or LiTaO3 films integrated on flexible substrate and methods for producing the same. More specifically, the invention relates to a flexible piezoelectric device for energy harvesting. The a Flexible piezoelectric device comprises a flexible substrate layer which comprises an upper face and a lower face, and at least one LiNbO.sub.3 and/or LiTaO.sub.3 film, called LNT film bonded to one of the faces of the flexible substrate layer, wherein thickness t.sub.f of said at least one LNT film is chosen between a use range of 5 to 50 micrometers (m).

PIEZOELECTRIC DEVICE COMPRISING FLEXIBLE SINGLE CRYSTALLINE PIEZOELECTRIC LINBO3 AND/OR LITAO3 FILMS INTEGRATED ON FLEXIBLE SUBSTRATE AND METHODS FOR PRODUCING THE SAME

The invention relates to a piezoelectric device comprising flexible single crystalline piezoelectric LiNbO3 and/or LiTaO3 films integrated on flexible substrate and methods for producing the same. More specifically, the invention relates to a flexible piezoelectric device for energy harvesting. The a Flexible piezoelectric device comprises a flexible substrate layer which comprises an upper face and a lower face, and at least one LiNbO.sub.3 and/or LiTaO.sub.3 film, called LNT film bonded to one of the faces of the flexible substrate layer, wherein thickness t.sub.f of said at least one LNT film is chosen between a use range of 5 to 50 micrometers (m).

Elastic wave device

Functional element units and a connection line electrically connecting the functional element units are formed on one principal surface of a piezoelectric motherboard. A resin support layer enclosing the functional element units is formed on the one principal surface of the motherboard. An elastic wave device with the functional units is obtained by dividing a multilayer body including the motherboard, the functional element units, and the support layer into a plurality of sections along a dicing line. The connection line includes a line main body positioned on the dicing line, and a connection unit in which the line main body and the functional element units are electrically connected. Prior to dividing the multilayer body, a retaining member made of resin which straddles the line main body in the width direction of the line main body is formed separate from the support layer on the motherboard.

Manufacturing method for ultrasonic fingerprint sensor
10643050 · 2020-05-05 · ·

A manufacturing method for an ultrasonic fingerprint sensor is provided. The method may include: preparing a sintered ceramic element under incomplete sintering conditions; forming a processed ceramic element by cutting a first surface of the sintered ceramic element along a first direction in pre-designated intervals up to such a depth that leaves a remainder region at a second surface and cutting the second surface of the sintered ceramic element along a second direction perpendicular to the first direction in pre-designated intervals up to such a depth that leaves a remainder region at the first surface; sintering the processed ceramic element under complete sintering conditions; filling an insulation material into troughs formed in the processed ceramic element by the cutting processes; and polishing the first surface and second surface to remove the remainder regions such that piezoelectric rods are exposed while arranged in an array form.

METHODS OF PLASMA DICING BULK ACOUSTIC WAVE COMPONENTS
20200127632 · 2020-04-23 ·

Aspects of this disclosure relate to methods of manufacturing bulk acoustic wave components. Such methods include plasma dicing to singulate individual bulk acoustic wave components. A buffer layer can be formed over a substrate of bulk acoustic wave components such that streets are exposed. The bulk acoustic wave components can be plasma diced along the exposed streets to thereby singulate the bulk acoustic wave components