A method for manufacturing a vibration device includes preparing a base wafer including a plurality of fragmentation regions, placing vibration elements at a first surface of the base wafer, producing a device wafer in which a housing that accommodates each of the vibration elements is formed in each of the fragmentation regions by bonding a lid wafer to the base wafer, forming a first groove, which starts from the lid wafer and reaches a level shifted from the portion where the base wafer and the lid wafer are bonded to each other toward a second surface of the base wafer, along the boundary between adjacent fragmentation regions of the device wafer, placing a resin material in the first groove, and forming a second groove, which passes through the device wafer, along the boundary to fragment the device wafer.

Disclosed is a method for manufacturing a laminated piezoelectric composite. The method includes wet-mixing ceramic powder, a polymer binder, a plasticizer and a solvent for 4 to 72 hours so as to generate a mixed slurry, introducing the mixed slurry into a tape casting process so as to prepare a plurality of piezoelectric composite sheets, drying and forming the plurality of piezoelectric composite sheets using a roll-to-roll process so as to prepare the plurality of formed piezoelectric composite sheets, forming internal electrodes on the plurality of piezoelectric composite sheets so as to prepare the plurality of piezoelectric composite sheets having the internal electrodes, laminating and pressing the plurality of piezoelectric composite sheets having the internal electrodes so as to generate a piezoelectric composite sheet laminate having the internal electrodes, and cutting the piezoelectric composite sheet laminate having the internal electrodes into a desired shape and size.

A method of manufacture and resulting structure for a single crystal electronic device with an enhanced strain interface region. The method of manufacture can include forming a nucleation layer overlying a substrate and forming a first and second single crystal layer overlying the nucleation layer. These first and second layers can be doped by introducing one or more impurity species to form the strained single crystal layers. The first and second strained layers can be aligned along the same crystallographic direction to form a strained single crystal bi-layer having an enhanced strain interface region. Using this enhanced single crystal bi-layer to form active or passive devices results in improved physical characteristics, such as enhanced photon velocity or improved density charges.

In a chip-on-array approach, acoustic and electronic modules are separately formed. The acoustic stack is connected to one interposer, and the electronics are connected to another interposer. Different connection processes (e.g., using low temperature bonding for the acoustic stack and higher temperature-based interconnect for the electronics) may be used. This arrangement may allow for different pitches of the transducer elements and the I/O of the electronics by staggering vias in the interposers. The two interposers are then connected to form the chip-on-array.

An object of the present invention is to provide a cut sheet-like piezoelectric film which includes electrode layers on both surfaces of a piezoelectric layer and is capable of preventing a short circuit of the electrode layers. The object is achieved by providing a cut sheet-like piezoelectric film including a piezoelectric layer which contains piezoelectric particles in a matrix containing a polymer material, and electrode layers which are provided on both surfaces of the piezoelectric layer, in which a distance between the electrode layers at an end portion in a thickness direction is 40% or greater with respect to a thickness of the piezoelectric layer.

There is provided a method for producing a piezoelectric element, which allows for forming a columnar microstructure with a small width and a high aspect ratio. The method is intended to produce a piezoelectric element 102 including a three-dimensional structure group 20 having a plurality of the three-dimensional structures 21 and 321 formed in a plate-like or columnar shape with a width of 30 μm or less and a height of 80 μm or more. The production method includes a first process of fabricating a plurality of plate-like or columnar precursor shapes 82a on a bulk material 81 formed of a Pb-based piezoelectric material, and a second process of reducing the width of the precursor shapes 82a to a predetermined value using an etching liquid.

An acoustic wave device includes a piezoelectric substrate including a support substrate and a piezoelectric layer on the support substrate, the piezoelectric substrate including a first principal surface on the piezoelectric layer side, and a second principal surface on the support substrate side, an IDT electrode on the first principal surface, a support layer on the support substrate, a cover on the support layer, a through-via electrode provided through the support substrate and electrically connected to the IDT electrode, a first wiring electrode on the second principal surface of the piezoelectric substrate and electrically connected to the through-via electrode, and a protective film on the second principal surface to cover at least a portion of the first wiring electrode. The protective film is provided on an inner side of the support layer when viewed in a direction normal or substantially normal to the second principal surface.

Disclosed is a sensor for monitoring a composite structure. The sensor includes multiple sensing elements of different sizes, each configured for different respective monitoring tasks. Also disclosed are methods of fabricating the sensor, designing and manufacturing the sensor, and attaching the sensor to the composite structure.

A chip singulation method includes, in stated order: forming a surface supporting layer on an upper surface of a wafer; thinning the wafer from the undersurface to reduce the thickness to at most 30 μm; removing the surface supporting layer from the upper surface; forming a first metal layer and subsequently a second metal layer on the undersurface of the wafer; applying a dicing tape onto an undersurface of the second metal layer; applying, onto the upper surface of the wafer, a process of increasing hydrophilicity of a surface of the wafer; forming a water-soluble protective layer on the surface of the wafer; cutting the wafer, the first metal layer, and the second metal layer by irradiating a predetermined region of the upper surface of the wafer with a laser beam; and removing the water-soluble protective layer from the surface of the wafer using wash water.

A method of fabricating a transducer includes embedding signal flexes and ground-return flexes inside a backing block. The method includes forming stack configurations with a height in elevation and a width perpendicular to the height. The forming includes: dicing a piezoelectric layer in the elevation into rows (separating the piezoelectric layer into portions); defining a beam pattern for the transducer by aligning the portions on the backing block; and forming gaps in-between each piezoelectric layer portion and each adjacently aligned piezoelectric layer portion. The method includes forming stacks by bonding one or more matching layers to the piezoelectric layer portions by utilizing a conductive surface of a first matching layer of the one or more matching layers. The method also includes forming cavities in the one or more matching layers in elevation, dicing the stacks along an elevation direction into multiple elements, and filling the cavities with a material.