H10N30/088

Manufacturing method of mounting structure, and laminate sheet therefor

A manufacturing method of a mounting structure, the method including: a step of preparing a mounting member including a first circuit member and a plurality of second circuit members placed on the first circuit member, the mounting member having a space between the first circuit member and the second circuit member; a step of preparing a laminate sheet including a first thermal-conductive layer and a second thermal-conductive layer, the first thermal-conductive layer disposed at least on one outermost side; a disposing step of disposing the laminate sheet on the mounting member such that the first thermal-conductive layer faces the second circuit members; and a sealing step of pressing the laminate sheet against the first circuit member and heating the laminate sheet, to seal the second circuit members so as to maintain the space, and to cure the laminate sheet. The first thermal-conductive layer after curing has a coefficient of thermal conductivity in a thickness direction at room temperature being equal to or greater than that in a principal surface direction, and the second thermal-conductive layer after curing has a coefficient of thermal conductivity in a principal surface direction at room temperature being greater than that in a thickness direction.

METHODS AND SYSTEMS FOR WAFER SCALE TRANSDUCER ARRAY FABRICATION
20230028329 · 2023-01-26 ·

Various methods and systems are provided for a multi-frequency transducer array. In one example, the transducer array may be fabricated via a wafer scale approach, where a first comb structure, with a first type of element, is formed by dicing a first acoustic stack and a second comb structure, with a second type of element, is formed by dicing a second acoustic stack. Combining the first and second comb structures may form a multi-frequency transducer array.

Ultrasound transducer and method for wafer level front face attachment

Methods and systems are provided for a single element ultrasound transducer. In one embodiment, a method for the transducer comprises laminating a comb structure and a conductive base package into an acoustic stack with a non-conductive glue, grinding the acoustic stack, and dicing the ground acoustic stack along a plane extending from the top surface of the second fin of the conductive base package to the bottom surface of the acoustic stack. The resulting transducer may have a flat front face with a non-conductive groove separating a ground pad formed by the conductive base package from a signal pad formed by a matching layer of the comb structure.

Ultrasound transducer and method for wafer level front face attachment

Methods and systems are provided for a single element ultrasound transducer. In one embodiment, a method for the transducer comprises laminating a comb structure and a conductive base package into an acoustic stack with a non-conductive glue, grinding the acoustic stack, and dicing the ground acoustic stack along a plane extending from the top surface of the second fin of the conductive base package to the bottom surface of the acoustic stack. The resulting transducer may have a flat front face with a non-conductive groove separating a ground pad formed by the conductive base package from a signal pad formed by a matching layer of the comb structure.

Bulk acoustic wave component with conductor extending laterally from via

Aspects of this disclosure relate to methods of manufacturing bulk acoustic wave components. Such methods include plasma dicing to singulate individual bulk acoustic wave components. A buffer layer can be formed over a substrate of bulk acoustic wave components such that streets are exposed. The bulk acoustic wave components can be plasma diced along the exposed streets to thereby singulate the bulk acoustic wave components.

Bulk acoustic wave component with conductor extending laterally from via

Aspects of this disclosure relate to methods of manufacturing bulk acoustic wave components. Such methods include plasma dicing to singulate individual bulk acoustic wave components. A buffer layer can be formed over a substrate of bulk acoustic wave components such that streets are exposed. The bulk acoustic wave components can be plasma diced along the exposed streets to thereby singulate the bulk acoustic wave components.

TRANSDUCERS, THEIR METHODS OF MANUFACTURE AND USES

There is disclosed a transducer and a method for generating the transducer. The transducer is formed on a substrate layer. The transducer includes a first electrode layer, a first piezoelectric layer on the first electrode layer, and a second electrode layer on the first piezoelectric layer. The first electrode layer is connected to a first electrical connector and the second electrode layer is connected to a second electrical connector. The transducer can be configured to act as an acoustic sensor or an electric potential sensor.

TRANSDUCERS, THEIR METHODS OF MANUFACTURE AND USES

There is disclosed a transducer and a method for generating the transducer. The transducer is formed on a substrate layer. The transducer includes a first electrode layer, a first piezoelectric layer on the first electrode layer, and a second electrode layer on the first piezoelectric layer. The first electrode layer is connected to a first electrical connector and the second electrode layer is connected to a second electrical connector. The transducer can be configured to act as an acoustic sensor or an electric potential sensor.

CHIP SINGULATION METHOD
20230015582 · 2023-01-19 ·

A chip singulation method includes, in stated order: forming a surface supporting layer on an upper surface of a wafer; thinning the wafer from the undersurface to reduce the thickness to at most 30 μm; removing the surface supporting layer from the upper surface; forming a first metal layer and subsequently a second metal layer on the undersurface of the wafer; applying a dicing tape onto an undersurface of the second metal layer; applying, onto the upper surface of the wafer, a process of increasing hydrophilicity of a surface of the wafer; forming a water-soluble protective layer on the surface of the wafer; cutting the wafer, the first metal layer, and the second metal layer by irradiating a predetermined region of the upper surface of the wafer with a laser beam; and removing the water-soluble protective layer from the surface of the wafer using wash water.

METHOD AND SYSTEM TO PREVENT DEPOLING OF ULTRASOUND TRANSDUCER

An ultrasound system, probe and method are provided. The ultrasound system includes a transducer with piezoelectric transducer elements polarized in a poling direction. A bipolar transmit circuit is configured to generate a transmit signal having first and second polarity segments. The first and second polarity segments have corresponding first and second peak amplitudes. A bias generator is configured to generate a bias signal in a direction of the poling direction. The bias signal is combined with the transmit signal to form a biased transmit signal that is shifted in the direction of the poling direction and still includes both of positive and negative voltages over a transmit cycle.