A method of manufacturing a dielectric film includes the steps of: adjusting a particle size distribution of particles of a dielectric substance to fall within a specified range; kneading the particles having the adjusted particle size distribution and a dispersion medium to obtain a slurry; and forming the slurry into a film shape to obtain a film-like compact.

Provided is a piezoelectric single crystal, a method of manufacturing the piezoelectric single crystal, and piezoelectric and dielectric application components using the piezoelectric single crystal. The piezoelectric single crystal shows that characteristics of the piezoelectric single crystal are maximized through the control of composition concerning ions located at [A] from a perovskite type crystal structure ([A][B]O.sub.3), the single crystal of uniform composition can be provided without a composition gradient even in case of complex, chemical composition thanks to a solid phase single crystal growth method, and in particular, the piezoelectric single crystal is provided in a form which causes large resistance to a mechanical impact, and facilitates mechanical processing, so the piezoelectric single crystal can usefully be applied to the piezoelectric application component and the dielectric application component, like ultrasonic transducers, piezoelectric actuators, piezoelectric sensor, dielectric capacitors, using the piezoelectric single crystal pertain.

Provided is a piezoelectric single crystal, a method of manufacturing the piezoelectric single crystal, and piezoelectric and dielectric application components using the piezoelectric single crystal. The piezoelectric single crystal shows that characteristics of the piezoelectric single crystal are maximized through the control of composition concerning ions located at [A] from a perovskite type crystal structure ([A][B]O.sub.3), the single crystal of uniform composition can be provided without a composition gradient even in case of complex, chemical composition thanks to a solid phase single crystal growth method, and in particular, the piezoelectric single crystal is provided in a form which causes large resistance to a mechanical impact, and facilitates mechanical processing, so the piezoelectric single crystal can usefully be applied to the piezoelectric application component and the dielectric application component, like ultrasonic transducers, piezoelectric actuators, piezoelectric sensor, dielectric capacitors, using the piezoelectric single crystal pertain.

Disclosed is a method of manufacturing ultrasonic sensors. The method includes forming a micropattern having concave and convex portions on an etchable substrate, filling a piezoelectric material in the concave portions of the micropattern, pressurizing the filled piezoelectric material, sintering the piezoelectric material to form preliminary piezoelectric bodies, re-sintering the preliminary piezoelectric bodies to form densely packed unit piezoelectric bodies, and forming electrode terminals at both ends of each of the unit piezoelectric bodies to produce a unit piezoelectric cell. The method enables the manufacture of high-quality ultrasonic sensors in high yield.

A piezoelectric composition according to the present invention comprising: a carbon, and a main component composed of an alkali metal niobate based compound. The amount of carbon contained is 350 to 700 ppm by weight.

Even with the occurrence of misalignment of inner electrodes in a ceramic collective board, a multilayer electronic component is made in which inner electrodes are disposed at suitable positions. Disclosed herein are descriptions of a first-stage ceramic collective board and a second-stage ceramic collective board used for manufacturing a multilayer electronic component. The present disclosure further describes a manufacturing method for the second-stage ceramic collective board and a manufacturing method for a multilayer electronic component.

A piezoelectric vibration device includes an element mounting member provided with a recessed part, a vibration element held in the recessed part, and a lid closing the recessed part. The element mounting member includes an insulating base body including an inner bottom surface of the recessed part and an inner circumferential surface of the recessed part surrounding the inner bottom surface, a pair of signal terminals which are located on an outer surface of the base body and are electrically connected to the vibration element, a GND terminal which is located on the outer surface of the base body, and a shield film which is superposed on the inner circumferential surface of the recessed part and is electrically connected to the GND terminal.

A piezoelectric ceramic containing a perovskite-type compound containing at least Pb, Zr, Ti, Mn, and Nb, in which in an X-ray crystal structure analysis chart of the perovskite-type compound, there is no X-ray diffraction peak branching between a (101) plane of a main peak of a PZT tetra phase in a range of 2θ=30.5° to 31.5° and a (110) plane on which an X-ray diffraction peak is in a range of 2θ=30.8° to 31.8°, and a number of X-ray diffraction peaks based on the (101) plane and the (110) plane is one.

A piezoelectric composition including copper, germanium and a complex oxide represented by a compositional formula K.sub.mNbO.sub.3 and having a perovskite structure, in which m in the compositional formula satisfies 0.970≤m≤0.999, and with respect to 1 mol of the complex oxide, x mol % of copper in terms of a copper element and y mol % of germanium in terms of a germanium element are contained, wherein x satisfies 0.100≤x≤1.000 and y satisfies 0.000<y≤1.500.

A piezoelectric ceramic containing no lead as a constituent element is provided. Coefficient of variation C.V. of grain size of grains contained in the piezoelectric ceramic is 35% or less, and an image quality (IQ) image obtained by analyzing a cross section of the piezoelectric ceramic by an electron backscatter diffraction (EBSD) method shows that at least one of the grains has a grain size of 3 μm to 5 μm and an area ratio of a domain in said at least one of the grains is 85% or more.