A process for manufacturing a microelectromechanical mirror device includes, in a semiconductor wafer, defining a support frame, a plate connected to the support frame so as to be orientable around at least one rotation axis, and cantilever structures extending from the support frame and coupled to the plate so that bending of the cantilever structures causes rotations of the plate around the at least one rotation axis. The process further includes forming piezoelectric actuators on the cantilever structures, forming pads on the support frame, and forming spacer structures protruding from the support frame more than both the pads and the stacks of layers forming the piezoelectric actuators.

A piezoelectric actuator including an upper piezoelectric bimorph beam having a first upper piezoelectric layer, a second upper piezoelectric layer and at least three upper electrode layers extending between a first end and a second end of the upper piezoelectric bimorph beam; a lower piezoelectric bimorph beam having a first lower piezoelectric layer, a second lower piezoelectric layer and at least three lower electrode layers extending between a first end and a second end of the lower piezoelectric bimorph beam, and wherein the first end of the lower piezoelectric bimorph beam is coupled to the first end of the upper piezoelectric bimorph beam by a first joint, and the second end of the lower piezoelectric bimorph beam is coupled to second end of the upper piezoelectric bimorph beam; and a base member coupled to a center region of the lower piezoelectric bimorph beam.

An actuator device has a temperature sensing means and a controller adapted to apply a high frequency AC signal to stimulate internal self-heating to thereby maintain a temperature of an actuator member of the device at a certain fixed temperature, this temperature being elevated with respect to an initial temperature of the actuator member. This ensures that thermal drift may be mitigated or eliminated by compensating for any changes in environmental temperature through raising or lowering the level of the heating signal.

The present disclosure relates to a piezoelectric single-crystal element, a MEMS device using same, and a method for manufacturing same, wherein the piezoelectric single-crystal element includes a wafer, a lower electrode stacked on the wafer, a piezoelectric single-crystal thin film stacked on the lower electrode, and an upper electrode stacked on the piezoelectric single-crystal thin film, wherein the piezoelectric single-crystal thin film is composed of PMN-PT, PIN-PMN-PT or Mn:PIN-PMN-PT, and the piezoelectric single-crystal thin film has a polarization direction set to a <001> axis, a <011> axis or a <111> axis, and a MEMS device using same.

A variable focal length optical element including a light-transmitting layer, a cover, a gel, a piezoelectric film, and a driving electrode is provided. The cover has a first through hole to define a light-passing area. The cover, an adhesive layer, and the light-transmitting layer surround and form a first cavity together, and the gel is filled in the first cavity. The driving electrode is configured to drive the piezoelectric film, so that the piezoelectric film is deformed to pull the light-transmitting layer to bend and deform to squeeze the gel in the first cavity, and thereby controls a curvature change of an optical surface formed in the light-passing area by the gel protruding out from the first through hole.

A piezoelectric actuator is formed like a rectangular flat plate, and includes a substrate layer, a lower electrode layer, a piezoelectric layer, and an upper electrode layer formed in this order from bottom to top in a thickness direction. The upper electrode layer is constituted of a plurality of electrode segments separated in a surface direction, and connection wires connecting the electrode segments which are adjoining in the surface direction.

Provided is a fluid viscosity measuring device including a support structure having an opening part, the opening part penetrating the support structure in a first direction, a driving resonator fixed to the support structure and extending to overlap the opening part, and a detection resonator fixed to the support structure and extending parallel to the driving resonator, the detection resonator being spaced apart from the driving resonator in the first direction. The driving resonator includes a first piezoelectric body. The detection resonator includes a second piezoelectric body. The first piezoelectric body and the second piezoelectric body have the same shape.

The present invention relates to a cantilever for a piezoelectric energy harvesting system, wherein the cantilever (2,20,30) comprises two layers (21,22,31,32) formed of polyvinylidene fluoride, and wherein a core layer (23,33) formed of a shim material is sandwiched between the two layers (21,22,31,32) formed of polyvinylidene fluoride

An optical device includes: an optical element; a housing unit configured to accommodate the optical element; a support part configured to pivotally support the optical element to be tiltable with respect to the housing unit; a piezoelectric element configured to connect the optical element and the housing unit to each other; and an electrode arranged at the piezoelectric element.

A piezoelectric device includes a support member, and a vibrating portion provided on a support surface of the support member. The vibrating portion includes, in addition to a first electrode, a piezoelectric film and a second electrode arranged in a stacking direction, an insulating film configured to increase an electric resistance value between the first and second electrodes. The first electrode is provided on the support surface of the support member, and includes an opening penetrating the first electrode in the stacking direction. The piezoelectric film is provided on the first electrode to extend across the opening. The second electrode is provided on the piezoelectric film. The insulating film is provided at a position between the first electrode and the second electrode, and at least a part of the insulating film overlaps with the opening in the stacking direction.