A process of forming an integrated circuit containing a piezoelectric thin film by forming a sol gel layer, drying in at least 1 percent relative humidity, baking starting between 100 and 225° C. increasing to between 275 and 425° C. over at least 2 minutes, and forming the piezoelectric thin film by baking the sol gel layer between 250 and 350° C. for at least 20 seconds, annealing between 650 and 750° C. for at least 60 seconds in an oxidizing ambient pressure between 700 and 1000 torr and a flow rate between 3 and 7 slm, followed by annealing between 650 and 750° C. for at least 20 seconds in a pressure between 4 and 10 torr and a flow rate of at least 5 slm, followed by ramping down the temperature.

Chemical sensors include a functionalized electrode configured to change surface potential in the presence of an analyte. A piezoelectric element is connected to the functionalized electrode. A piezoresistive element is in contact with the piezoelectric element.

A ferroelectric device comprising a substrate; a textured layer; a first electrode comprising a thin layer of metallic material having a crystal lattice structure divided into granular regions; a seed layer; the seed layer being epitaxially deposited so as to form a column-like structure on top of the granular regions of the first electrode; at least one ferroelectric material layer exhibiting spontaneous polarization epitaxially deposited on the seed layer; the ferroelectric material layer, the seed layer, and first electrode each having granular regions in which column-like structures produce a high degree of polarization normal to the growth plane and a method of making.

An actuator (100) powered by photonic energy comprises a rotor including a material (101) which deforms from a first underformed state when exposed to electromagnetic radiation to a second deformed state and begins to return to the first state when the electromagnetic radiation is removed. A stationary element (102) is affixed to the rotor. A moving element (105) engaging the stator at least when the rotor is in the second deformed state. Deformation of the deformable material in response to applied electromagnetic radiation is transmitted by the stator to the moving element by friction between the stationary element and the moving element for causing motion of the moving element.

A bender beam actuator includes a first layer of piezoelectric material and a second layer of piezoelectric material overlying a portion of the first layer of piezoelectric material, where a length of the first layer of piezoelectric material is at least 2% greater than a length of the second layer of piezoelectric material.

An apparatus includes a vibration member and a first cover disposed at a rear surface of the vibration member. The apparatus also includes a first vibration apparatus disposed at a rear surface of the first cover and configured to vibrate the vibration member. The apparatus includes a first enclosure member disposed at the rear surface of the first cover and at the rear surface of the vibration member. The apparatus also includes a first rear vibration member disposed at the first enclosure member.

The present invention relates to a room-temperature multiferroicity material, a method for preparing same, and an electronic device comprising same. According to an example embodiment of the present invention, a room-temperature multiferroicity material according to an aspect of the present disclosure comprises a compound in chemical Formula (2) below in a compound matrix in chemical formula (1) below. Chemical formula (1) (Pb.sub.1-xTM.sub.x)Fe.sub.1/2Nb.sub.1/2O.sub.3 (in chemical formula (1), TM comprises at least one selected from the group consisting of Fe, Ni and Co, and x is a number greater than 0 and smaller than 1). Chemical formula (2) ABO.sub.3 (in chemical formula (2), A comprises at least one selected from the group consisting of Pb, Bi and Ba, and B comprises Ti and/or Zr).

A process for transferring a thin layer consisting of a first material to a support substrate consisting of a second material having a different thermal expansion coefficient, comprises providing a donor substrate composed of an assembly of a thick layer formed of the first material and of a handle substrate having a thermal expansion coefficient similar to that of the support substrate, and the donor substrate having a main face on the side of the thick layer introducing light species into the thick layer to generate a plane of weakness therein and to define the thin layer between the plane of weakness and the main face of the donor substrate; assembling the main face of the donor substrate with a face of the support substrate; and detachment of the thin layer at the plane of weakness, the detachment comprising application of a heat treatment.

A method of fabricating an electronics package includes forming a cavity in a first surface of a semiconductor substrate, forming one or more passive devices on the semiconductor substrate, forming a microelectromechanical device on a piezoelectric substrate, and bonding the semiconductor substrate to the piezoelectric substrate with the microelectromechanical device disposed within the cavity.

A piezoelectric element includes a lower electrode layer, an upper electrode layer, an orientation control layer disposed between the lower electrode layer and the upper electrode layer, and a piezoelectric layer formed on an upper surface of the orientation control layer. The piezoelectric layer is oriented in a (001) plane or a (100) plane and has a perovskite structure including Pb(Zn.sub.1/3, Nb.sub.2/3)O.sub.3. The orientation control layer has a perovskite structure, is oriented in the (001) plane or the (100) plane, and contains a part of components forming the piezoelectric layer, as an additive.