Patent classifications
H10N30/8548
Hybrid piezoelectric microresonator
A hybrid ferroelectric/non-ferroelectric piezoelectric microresonator is disclosed. The hybrid microresonator uses a ferroelectric layer as the actuator as ferroelectric materials typically have higher actuation coefficients than non-ferroelectric piezoelectric materials. The hybrid microresonator uses a non-ferroelectric piezoelectric layer as the sensor layer as non-ferroelectric piezoelectric materials typically have higher sensing coefficients than ferroelectric materials. This hybrid microresonator design allows the independent optimization of actuator and sensor materials. This hybrid microresonator design may be used for bulk acoustic wave contour mode resonators, bulk acoustic wave solidly mounted resonators, free-standing bulk acoustic resonators, and piezoelectric transformers.
Method and system to prevent depoling of ultrasound transducer
An ultrasound system, probe and method are provided. The ultrasound system includes a transducer with piezoelectric transducer elements polarized in a poling direction. A bipolar transmit circuit is configured to generate a transmit signal having first and second polarity segments. The first and second polarity segments have corresponding first and second peak amplitudes. A bias generator is configured to generate a bias signal in a direction of the poling direction. The bias signal is combined with the transmit signal to form a biased transmit signal that is shifted in the direction of the poling direction and still includes both of positive and negative voltages over a transmit cycle.
Switch unit, display panel, manufacturing method thereof, and display apparatus
The present disclosure is related to a display panel. The display panel may include a plurality of switch units. Each of the plurality of the switch units may include a first electrode; a second electrode; a third electrode; a fourth electrode opposite the first electrode; a piezoelectric material layer between the first electrode and the fourth electrode; a connecting electrode above the fourth electrode and electrically insulated from the fourth electrode; and a driving transistor comprising a driving gate. The driving gate may be the third electrode. An orthogonal projection of the second electrode and an orthogonal projection of the third electrode on a plane of the connecting electrode may overlap the connecting electrode respectively.
Multiferroic heterostructures
A heterostructure includes a substrate exhibiting a piezoelectric effect, and a magnetostrictive film supported by the substrate. The magnetostrictive film includes an iron-gallium alloy. The iron-gallium alloy has a gallium composition greater than 20%.
Method for producing piezoelectric single crystal ingot and piezoelectric single crystal ingot
A method for producing a piezoelectric single crystal ingot shows small variation in the concentration of PbTiO.sub.3 in the growth direction of single crystal. A complete solid solution-type piezoelectric single crystal ingot is produced by using the Bridgman method, including: filling a starting material, wherein a relaxor having a compositional formula Pb(B.sub.1, B.sub.2)O.sub.3 is blended with lead titanate having a composition PbTiO.sub.3 to give a preset composition, into a crucible for growth; heating to the melting temperature to give a melted liquid layer; then moving the crucible for growth toward the low temperature side; and thus starting one-direction solidification from the lower part of the crucible to thereby produce a single crystal. During solidification, the feedstock containing the relaxor and lead titanate having a maximum grain size ≤3 mm is continuously supplied into the crucible.
Ultrasensitive sensor based on a piezoelectric transistor
Methods of using and making chemical sensors include exposing a functionalized electrode to a substance to be tested. The functionalized electrode is electrically connected to a sensor having a piezoelectric element and a piezoresistive element. A voltage on the functionalized electrode controls a resistance of the piezoresistive element. A current is measured passing through the piezoresistive element. The presence of the analyte is determined based on the measured current.
SOLID STATE TUNABLE IONIC OSCILLATOR DIELECTRIC MATERIALS AND RESONANT DEVICES
An article comprising a ferroelectric material in its ferroelectric phase, wherein the article is configured to enable low-loss propagation of signals with ultra-low dielectric loss at one or more select frequencies.
MULTIFERROIC HETEROSTRUCTURES
A heterostructure includes a substrate exhibiting a piezoelectric effect, and a magnetostrictive film supported by the substrate. The magnetostrictive film includes an iron-gallium alloy. The iron-gallium alloy has a gallium composition greater than 20%.
MAGNETOELECTRIC HETEROSTRUCTURES AND RELATED ARTICLES, SYSTEMS, AND METHODS
Magnetoelectric heterostructures, and related articles, systems, and methods, are generally described.
Piezoelectric Element And Liquid Droplet Ejection Head
There is provided a piezoelectric element including: a substrate; a first electrode formed at a first substrate surface of the substrate in a first direction; a first piezoelectric layer that is formed at the first electrode and that includes a flat surface portion along the first substrate surface and an inclined surface portion inclined with respect to the flat surface portion; a second piezoelectric layer that is formed at the inclined surface portion 170a and whose thickness is smaller than a thickness of the flat surface portion of the first piezoelectric layer; and a second electrode formed at at least the flat surface portion.