Provided is a dielectric thin film including a metal oxide. The metal oxide includes bismuth, sodium, barium, and titanium, at least a part of the metal oxide is a tetragonal crystal having a perovskite structure, and a (100) plane of at least a part of the tetragonal crystal is oriented in a normal direction of a surface of the dielectric thin film.

The present disclosure relates to a process for annealing poled ceramic over a heating period during which the temperature is raised incrementally to lock-in desirable high temperature characteristics.

An actuator includes: a vibration plate; a first electrode provided above the vibration plate; a piezoelectric layer that is provided above the first electrode and that contains a composite oxide having a perovskite structure; and a second electrode provided above the piezoelectric layer, in which a residual polarization of the piezoelectric layer is 0.535 times or less a spontaneous polarization of the piezoelectric layer.

Provided is a piezoelectric thin film containing a tetragonal crystal 1 of a perovskite type oxide and a tetragonal crystal 2 of the oxide. A (001) plane of the tetragonal crystal 1 and a (001) plane of the tetragonal crystal 2 are oriented in a normal direction of a surface of the piezoelectric thin film. An interval of the (001) plane of the crystal 1 is c1. An interval of a (100) plane of the crystal 1 is al. An interval of the (001) plane of the crystal 2 is c2. An interval of a (100) plane of the crystal 2 is a2. c2/a2 is more than c1/a1. A peak intensity of diffracted X-rays of the (001) plane of the crystal 1 is I.sub.1. A peak intensity of diffracted X-rays of the (001) plane of the crystal 2 is I.sub.2. I.sub.2(I.sub.1+I.sub.2) is from 0.50 to 0.90.

A force-measuring device includes a first substrate, signal processing circuitry, a thin-film piezoelectric stack overlying the first substrate, and piezoelectric micromechanical force-measuring elements (PMFEs). The thin-film piezoelectric stack includes a piezoelectric layer. The PMFEs are located at respective lateral positions along the thin-film piezoelectric stack. Each PMFE has: (1) a first electrode, (2) a second electrode, and (3) a respective portion of the thin-film piezoelectric stack. The first electrode and the second electrode are positioned on opposite sides of the piezoelectric layer to constitute a piezoelectric capacitor. Each of the PMFEs is configured to output voltage signals (PMFE voltage signals) between the respective first and second electrodes in accordance with a time-varying strain at the respective portion of the piezoelectric layer between the respective first and second electrodes resulting from a low-frequency mechanical deformation. The signal processing circuitry is configured to read at least some of the PMFE voltage signals.

An integrated device based on a third-generation semiconductor and a manufacturing method thereof are provided. The integrated device at least includes a SiC substrate, a buffer layer, a GaN film layer and a piezoelectric material layer; the SiC substrate includes a first buffer layer stacked on a first SiC substrate and a second buffer layer stacked on a second SiC substrate; the GaN film layer at least includes a first GaN film layer stacked on the first buffer layer and a second GaN film layer stacked on the second buffer layer; the first SiC substrate, the first buffer layer, the first GaN film layer and the piezoelectric material layer which are stacked are used for forming a piezoelectric multi-layer film; the piezoelectric multi-layer film is used for forming a surface acoustic wave (SAW) filter.

The present invention relates to a process for annealing a poled ceramic over a heating period during which the temperature is raised incrementally to lock-in desirable high temperature characteristics.

A piezoelectric element includes: a first electrode formed at a vibration plate; a seed layer formed at the first electrode; a piezoelectric film containing potassium, sodium, and niobium and formed at the seed layer; and a second electrode formed at the piezoelectric film. The piezoelectric film contains lithium and one or more first transition elements. The seed layer contains bismuth. When the piezoelectric film is divided into two equal parts in a stacking direction, the second electrode side is defined as a first region, and the first electrode side is defined as a second region, a bismuth intensity obtained by SIMS measurement at a boundary between the first region and the second region is equal to or less than 1/500 of a maximum bismuth intensity obtained by the SIMS measurement of the piezoelectric film.

According to the present invention, a piezoelectric film having a single crystal structure is able to be formed, from various piezoelectric materials, on a film structure of the present invention. A film structure according to the present invention includes: a substrate; a buffer film which is formed on the substrate and has a tetragonal crystal structure containing zirconia; a metal film containing a platinum group element, which is formed on the buffer film by means of epitaxial growth; and a film containing Sr(Ti.sub.1x, Ru.sub.x)O.sub.3 (wherein 0x1), which is formed on the metal film by means of epitaxial growth.

An actuator (100) powered by photonic energy comprises a rotor including a material (101) which deforms from a first underformed state when exposed to electromagnetic radiation to a second deformed state and begins to return to the first state when the electromagnetic radiation is removed. A stationary element (102) is affixed to the rotor. A moving element (105) engaging the stator at least when the rotor is in the second deformed state. Deformation of the deformable material in response to applied electromagnetic radiation is transmitted by the stator to the moving element by friction between the stationary element and the moving element for causing motion of the moving element.