An integrated device based on a third-generation semiconductor and a manufacturing method thereof are provided. The integrated device at least includes a SiC substrate, a buffer layer, a GaN film layer and a piezoelectric material layer; the SiC substrate includes a first buffer layer stacked on a first SiC substrate and a second buffer layer stacked on a second SiC substrate; the GaN film layer at least includes a first GaN film layer stacked on the first buffer layer and a second GaN film layer stacked on the second buffer layer; the first SiC substrate, the first buffer layer, the first GaN film layer and the piezoelectric material layer which are stacked are used for forming a piezoelectric multi-layer film; the piezoelectric multi-layer film is used for forming a surface acoustic wave (SAW) filter.

A dual bimorph assembly includes a multilaminar element structure where each elements includes a perforated metal layer, a suffusing conductive ink layer and a transductive assembly. A retainer assembly is provided with conductive tabs and a retainer through connector electrically connects metal layers.

An actuator powered by photonic energy comprises a rotor including a material which deforms from a first undeformed state when exposed to electromagnetic radiation to a second deformed state and begins to return to the first state when the electromagnetic radiation is removed. A stationary element is affixed to the rotor. A moving element engaging the stator at least when the rotor is in the second deformed state. Deformation of the deformable material in response to applied electromagnetic radiation is transmitted by the stator to the moving element by friction between the stationary element and the moving element for causing motion of the moving element.

A method of making a bimorph assembly by stacking a perforated outer bottom metal layer, a transductive element, a perforated central metal layer, a second transductive element, and a perforated outer top metal layer to form a laminar structure, the metal layers and transductive elements being separated by thin conductive ink layers. Applying uniform and continuous pressure to the bottom and top surfaces of the laminar structure. Thermal cycling the laminar structure according to a thermal profile that causes suffusion of the thin conductive ink layers into the metal perforations and the transductive element surface. Removing the pressure from the bottom and top surfaces of the laminar structure and applying an electric field to the central metal layer, the outer top metal layer, and the outer bottom metal layer.

Provided is a piezoelectric single crystal comprising an internal bias electric field, a method of manufacturing the same, and piezoelectric and dielectric application components using the piezoelectric single crystal. The piezoelectric single crystal shows that as a change in each composition of [A] site ions, [B] site ions and [O] site ions from a perovskite type crystal structure ([A][B]O.sub.3), and oxygen partial-pressure during heat treatment in terms of a manufacturing process are controlled, while maintaining the inherent high dielectric constant and piezoelectric constant, the high internal bias electric field (EI) characteristic essential for the electrical stability of the piezoelectric single crystal is simultaneously satisfied. Therefore, piezoelectric application components and dielectric application components using the piezoelectric single crystal having excellent characteristics can be used in a wide temperature range and operating voltage conditions.

A semiconductor substrate with oxide single crystal heterostructures, to which a sacrificial layer, an epitaxy functional oxide thin film having a perovskite structure and a metal layer are grown on an oxide single crystal substrate, prepared another metal layer on a semiconductor substrate, and bonded the metal layer of the oxide single crystal substrate to the metal layer of the semiconductor substrate to be face each other, and separated the oxide single crystal substrate by selectively etching and removing only the sacrificial layer after the bonding.

The present disclosure is directed towards a formulation for piezoelectric materials. The formulation may be printed including 2D or 3D printing. The formulation contains ceramic particles, a sol-gel, a high boiling point solvent and a binder.