A 2D phased array ultrasound device possessing ultrahigh spatial resolutions (<90 m) and high centre frequency (25 MHz) including: a 2D array of piezo crystal elements formed from the kerfing of a single crystal; a series of conductive electrodes formed on opposed sides of the piezo crystal elements; a series of front matching layers; and a backing unit comprising backing filler material and a series of flexible circuit layers sandwich together to interconnect the back surface electrodes of the piezo crystal elements.

Disclosed are multi-poled piezoelectric devices with improved packing density and methods for making such multi-poled piezoelectric devices with improved packing density. The multi-poled piezoelectric devices comprise: a) a top electrode, a piezoelectric layer, and a bottom electrode fabricated on a substrate; b) vias generated by etching the piezoelectric layer, the top electrode, or both; and c) a re-distribution layer (RDL) deposited over one or more of: the top electrode, the piezoelectric layer, the bottom electrode, or the one or more vias.

Provided is a vibration-type actuator in which electric contact between a piezoelectric element and an elastic member is sufficiently ensured. In the vibration-type actuator solving the above-described issue, a plate-like piezoelectric material included in the piezoelectric element has a through-hole penetrating in a thickness direction of the piezoelectric material and includes a through-hole electrode filling the through-hole, the through-hole electrode has a protruding portion protruding from a first opening portion of the through-hole that opens on an elastic member side, a ground electrode electrically connected to the through-hole electrode is provided on a surface on the first opening portion side of the piezoelectric material, and the through-hole electrode and the elastic member are electrically connected.

An acoustic wave device includes a piezoelectric layer and first and second electrodes facing each other in a direction crossing a thickness direction of the piezoelectric layer. The acoustic wave device utilizes a bulk wave of a thickness slip first-order mode. The acoustic wave device includes first and second resonators. Each of the first and second resonators includes the first and second electrodes, and a setting portion including a setup region where the first and second electrodes are provided in the piezoelectric layer. The thickness of each of the first and second resonators excludes the thickness of the first and second electrodes included in the resonator. The thickness of the first resonator is different from the thickness of the second resonator.

An acoustic wave device includes a piezoelectric layer and first and second electrodes facing each other in a direction crossing a thickness direction of the piezoelectric layer. The acoustic wave device utilizes a bulk wave of a thickness slip first-order mode. The acoustic wave device includes first and second resonators. Each of the first and second resonators includes the first and second electrodes, and a setting portion including a setup region where the first and second electrodes are provided in the piezoelectric layer. The thickness of each of the first and second resonators excludes the thickness of the first and second electrodes included in the resonator. The thickness of the first resonator is different from the thickness of the second resonator.

An object of the present invention is to provide a piezoelectric film capable of realizing an electroacoustic conversion film or the like in which the durability is high and a sufficient sound pressure with respect to an input operating voltage is obtained. The object is achieved by providing a piezoelectric film including a polymer-based piezoelectric composite material which contains piezoelectric particles in a matrix containing a polymer material, and electrode layers which are provided on both surfaces of the polymer-based piezoelectric composite material, in which in a case where a cross section of the film in a thickness direction is observed with a scanning electron microscope, the polymer-based piezoelectric composite material is divided into ten equal regions in the thickness direction, area ratios of the piezoelectric particles in two most distant regions are measured, and the area ratio of the piezoelectric particles in the region with a lower area ratio is set as 1, the area ratio of the piezoelectric particles in the region with a higher area ratio is 1.2 or greater.

The purpose of the present invention is to form a semiconductor device in which an active area laminated on a PZT (lead zirconate titanate (PbZrTiO.sub.3) sensor having a piezoelectric effect. The main structure of the present invention is as follows. A semiconductor device having a PZT (lead zirconate titanate (PbZrTiO.sub.3)) sensor including: the PZT sensor including a lower electrode formed on a glass substrate, a PZT, an upper electrode, a first inorganic insulating film covering the upper electrode, and an upper wiring formed on the first inorganic insulating film and connected to the upper electrode through a first through-hole formed in the first inorganic insulating film; in which a polyimide film is formed over the PZT sensor; a plurality of TFTs are formed on the polyimide film, and a thickness of the polyimide film is 5 m or more.

A piezoelectric element includes a piezoelectric body. The piezoelectric body includes a first region including a first main surface and a second region including a second main surface opposing the first main surface. The piezoelectric element includes a first internal electrode group in the first region and a second internal electrode group in the second region. Each of the first internal electrode group and the second internal electrode group includes a plurality of internal electrodes opposing each other in a direction in which the first main surface and the second main surface oppose each other. The internal electrode, among the plurality of internal electrodes of the first internal electrode group, closest to the second region and the internal electrode, among the plurality of internal electrodes of the second internal electrode group, closest to the first region are electrically connected to each other.

A dual bimorph assembly includes a multilaminar element structure where each elements includes a perforated metal layer, a suffusing conductive ink layer and a transductive assembly. A retainer assembly is provided with conductive tabs and a retainer through connector electrically connects metal layers.

A method of making a bimorph assembly by stacking a perforated outer bottom metal layer, a transductive element, a perforated central metal layer, a second transductive element, and a perforated outer top metal layer to form a laminar structure, the metal layers and transductive elements being separated by thin conductive ink layers. Applying uniform and continuous pressure to the bottom and top surfaces of the laminar structure. Thermal cycling the laminar structure according to a thermal profile that causes suffusion of the thin conductive ink layers into the metal perforations and the transductive element surface. Removing the pressure from the bottom and top surfaces of the laminar structure and applying an electric field to the central metal layer, the outer top metal layer, and the outer bottom metal layer.