A configuration and a method of constructing a high-temperature superconductor tape including a plurality superconducting filaments sandwiched between a substrate and an overlayer comprising compliant material extending to the substrate through gaps between each superconducting filament thereby isolating each superconducting filament.

Methods and structures corresponding to superconducting apparatus including superconducting layers and traces are provided. A method for forming a superconducting apparatus includes forming a first dielectric layer on a substrate by depositing a first dielectric material on the substrate and curing the first dielectric material at a first temperature. The method further includes forming a first superconducting layer comprising a first set of patterned superconducting traces on the first dielectric layer. The method further includes forming a second dielectric layer on the first superconducting layer by depositing a second dielectric material on the first superconducting layer and curing the second dielectric material at a second temperature, where the second temperature is lower than the first temperature. The method further includes forming a second superconducting layer comprising a second set of patterned superconducting traces on the second dielectric layer.

Techniques for forming quantum circuits, including connections between components of quantum circuits, are presented. A trench can be formed in a dielectric material, by removing a portion of the dielectric material and a portion of conductive material layered on top of the dielectric material, to enable creation of circuit components of a circuit. The trench can define a regular nub or compensated nub to facilitate creating electrical leads connected to the circuit components on a nub. The compensated nub can comprise recessed regions to facilitate depositing material during evaporation to form the leads. For compensated nub implementation, material can be evaporated in two directions, with oxidation performed in between such evaporations, to contact leads and form a Josephson junction. For regular nub implementation, material can be evaporated in four directions, with oxidation performed in between the third and fourth evaporations, to contact leads and form a Josephson junction.

Methods and structures corresponding to superconducting apparatus including superconducting layers and traces are provided. A method for forming a superconducting apparatus includes forming a first dielectric layer on a substrate by depositing a first dielectric material on the substrate and curing the first dielectric material at a first temperature. The method further includes forming a first superconducting layer comprising a first set of patterned superconducting traces on the first dielectric layer. The method further includes forming a second dielectric layer on the first superconducting layer by depositing a second dielectric material on the first superconducting layer and curing the second dielectric material at a second temperature, where the second temperature is lower than the first temperature. The method further includes forming a second superconducting layer comprising a second set of patterned superconducting traces on the second dielectric layer.

Disclosed are a superconducting quantum chip structure and a fabrication method for a superconducting quantum chip. The superconducting quantum chip structure includes a first structural member, a second structural member, and a support and connection member, where the first structural member is provided with a qubit, a read cavity, and a first connection terminal, the qubit is coupled to the read cavity, and the qubit is electrically connected to the first connection terminal; the second structural member is provided with a signal transmission line and a second connection terminal electrically connected to each other; and two ends of the support and connection member are electrically connected to the first connection terminal and the second connection terminal, respectively, and the support and connection member is configured to transmit a control signal received on the signal transmission line to the qubit.

The invention relates to a method for manufacturing a Josephson junction comprising a step for providing a substrate, extending along a longitudinal direction, a step for depositing a superconducting layer on the substrate so that this layer extends from the substrate in a transverse direction, perpendicular to the longitudinal direction, and a step for irradiation of ions in a central area of the layer defined in the longitudinal direction, the method being characterized in that it includes, prior to the irradiation step, a step for removing a portion of the central area of the superconducting layer so as to delimit a set of areas of the superconducting layer aligned in the longitudinal direction including the central area and two lateral areas.

A tape type superconductor (1), extending in longitudinal direction (LD), includes a substrate tape (2), at least one buffer layer (3), a superconductor layer (4), and plural elongated barrier structures (5, 5a, 5b). The superconductor layer has a width W.sub.SL in a direction (WD) that is perpendicular to the longitudinal direction and runs parallel to a flat side (8) of the substrate tape. The tape type superconductor has a longitudinal length L.sub.TTS t, and the elongated barrier structures are oriented in parallel with the longitudinal direction. A respective barrier structure has a longitudinal length L.sub.BS, with L.sub.BS0.20*W.sub.SL and L.sub.BS0.20*L.sub.TTS. The barrier structures are distributed longitudinally, are located at least partially in the superconductor layer, and impede a superconducting current flow in width direction across a respective barrier structure. This tape type superconductor achieves high critical currents simply and over extended tape lengths with suppressed magnetization.

The invention relates to a method for producing a composite comprising a high-temperature superconductor (HTS) layer based on rare earth metal-barium-copper oxide on a substrate with defined biaxial texture, having the following steps: applying a first HTS coating solution to the substrate, drying the first HTS coating solution to produce a first film, pyrolyzing the first film to produce a first pyrolyzed sublayer, removing an interfacial layer on the upper side of the first pyrolyzed sublayer to produce a first pyrolyzed sublayer with reduced layer thickness, applying a second HTS coating solution to the first pyrolyzed sublayer with reduced layer thickness, drying the second HTS coating solution to produce a second film, pyrolyzing the second film to produce a second pyrolyzed sublayer, optionally forming one or more further pyrolyzed sublayers on the second pyrolyzed sublayer, and crystallizing the overall layer formed from the pyrolyzed sublayers to complete the HTS layer, wherein the removal of the interfacial layer in step D) is effected in such a way that a texture determined by the defined biaxial texture of the substrate is transferred to the first and also to the second pyrolyzed sublayer, and also to a product producible by such a method.

A wavelength tunable gain medium with the use of micro-electromechanical system (MEMS) based Fabry-Perot (FP) filter cavity tuning is provided as a tunable laser. The system comprises a laser cavity and a filter cavity for wavelength selection. The laser cavity consists of a gain medium such as a Semiconductor Optical Amplifier (SOA), two collimating lenses and an end reflector. The MEMS-FP filter cavity comprises a fixed reflector and a moveable reflector, controllable by electrostatic force. By moving the MEMS reflector, the wavelength can be tuned by changing the FP filter cavity length. The MEMS FP filter cavity displacement can be tuned discretely with a step voltage, or continuously by using a continuous driving voltage. The driving frequency for continuous tuning can be a resonance frequency or any other frequency of the MEMS structure, and the tuning range can cover different tuning ranges such as 30 nm, 40 nm, and more than 100 nm.

Methods and structures corresponding to superconducting apparatus including superconducting layers and traces are provided. A method for forming a superconducting apparatus includes forming a first dielectric layer on a substrate by depositing a first dielectric material on the substrate and curing the first dielectric material at a first temperature. The method further includes forming a first superconducting layer comprising a first set of patterned superconducting traces on the first dielectric layer. The method further includes forming a second dielectric layer on the first superconducting layer by depositing a second dielectric material on the first superconducting layer and curing the second dielectric material at a second temperature, where the second temperature is lower than the first temperature. The method further includes forming a second superconducting layer comprising a second set of patterned superconducting traces on the second dielectric layer.