Patent classifications
H10N60/0688
Vertical transmon structure and its fabrication process
A vertical transmon qubit structure, includes a substrate having a first surface and a second surface. A through-silicon-via (TSV) is located in the substrate. A first electrode of a Josephson junction (JJ) is located on a portion of the first surface of the substrate and adjacent to the TSV. A second electrode of the JJ is in contact with the TSV and on a second portion of the first surface of the substrate. The first electrode is separated from the second electrode by an insulator.
TAPE COMPRISING SUPERCONDUCTING ELEMENTS DISTRIBUTED LONGITUDINALLY
A tape includes a plurality of superconducting elements, such as pixels, distributed along a longitudinal direction of the tape. The tape has a size along a first dimension, such as a thickness, which is at least 10 times smaller, than a size along a second dimension, such as a width, and where the size along the second dimension, such as the width, is at least 10 times smaller, than a size along a third dimension, such as a length. There is also presented a use of the tape, a method of manufacture of the tape, and a bolometer and/or a kinetic inductance detector comprising the tape.