A dielectric composite including a plurality of crystal grains including a semiconductor or conductive material, and a grain boundary insulation layer between the crystal grains, wherein the grain boundary insulation layer includes a two-dimensional layered material covering at least a portion of a surface of at least one of the crystal grains, and a multi-layered capacitor and an electronic device including the same.

The resistive material for sensing current contains: metal particles selected from a group consisting of nichrome, copper-manganese, and copper-nickel; insulating particles selected from a group consisting of alumina, aluminum nitride, silicon nitride, and zirconia; and titanium oxide.

A strain resistance film containing a composition represented by Cr.sub.100-x-y-zAl.sub.xN.sub.yO.sub.z, satisfying 5?x?50, 0.1?y?20, 0.1?z?17, and y+z?25.

A method for producing an electrical component is disclosed. In an embodiment the method includes providing a carrier element providing a material having a temperature-dependent resistance, applying the material on a surface of the carrier element for producing a resistance layer on the carrier element and subsequently sintering the resistance layer for linking the resistance layer to the carrier element.

A PTC thermistor element for a tempering device may include a main body, which may have a positive temperature coefficient. The main body may have PTC thermistor components, a core, and ceramics components at least in the core. The PTC thermistor components may have a positive temperature coefficient, and the ceramics components may have a thermal conductivity of at least 2.5 W/mK. The ceramics components may be disposed in a distributed manner.

A thick film resistor excluding a toxic lead component from a conductive component and glass and having characteristics equivalent to or superior to conventional resistors in terms of, in a wide resistance range, resistance values, TCR characteristics, current noise characteristics, withstand voltage characteristics and the like. The thick film resistor is formed of a fired product of a resistive composition, wherein the thick film resistor contains ruthenium-based conductive particles containing ruthenium dioxide and a glass component essentially free of a lead component and has a resistance value in the range of 100 / to 10 M/ and a temperature coefficient of resistance within 100 ppm/ C.

A polymer positive temperature coefficient (PPTC) material is provided. The PPTC material may include a polymer matrix that defines a PPTC body, and further includes a high temperature polymer. The PPTC material may include a conductive filler component, disposed in the polymer matrix, an arc suppressant, and a high temperature antioxidant, disposed in the polymer matrix.

A composite thermistor material, a preparation method and an application thereof. The perovskite structure oxide and the pyrochlorite structure oxide are composite by solid state reaction method, which comprise process of ball milling, drying, and calcining. Then the thermistor ceramics with high temperature resistance and controllable B value are sintered at high temperature after mould forming, then the thermistor disks are coated by platinum paste, and then the platinum wire is welded as the lead wire to form thermistor element. The thermistor of the invention can realize temperature measurement from room temperature to 1000 C. and has good negative temperature coefficient thermistor characteristics. The thermistor coefficient B can be adjusted by changing the two-phase ratio to meet the requirements of different systems.

A multilayer component and a mathod for producing a multilayer component are disclosed. In an embodiment a multilayer component includes a ceramic main element and at least one metal structure, wherein the metal structure is cosintered and wherein main element is a varistor ceramic having 90 mol % of ZnO, from 0.5 to 5 mol % of Sb.sub.2O.sub.3, from 0.05 to 2 mol % of Co.sub.3O.sub.4, Mn.sub.2O.sub.3, SiO.sub.2 and/or Cr.sub.2O.sub.3, and <0.1 mol % of B.sub.2O.sub.3, Al.sub.2O.sub.3 and/or NiO.

Provided is a metal oxide varistor having an overcurrent protection function. The metal oxide varistor includes a metal oxide varistor body, a first electrode layer, a second electrode layer coated, an anistropic conductive paste (ACP) attached to a surface of the first electrode layer on one side of the first direction, a fuse plate bonded to the ACP and electrically conductive to the first electrode layer, a first copper-plated wire having one side of a second direction orthogonal to the first direction connected to the fuse plate, a second copper-plated wire having one side of the second direction bonded to the surface of the second electrode layer on the other side of the first direction, and an insulated coating member configured to surround the first copper-plated wire and the second copper-plated wire on one side of the second direction, the metal oxide varistor body and the fuse plate.