Patent classifications
H01F1/06
Sputtering Target for Forming Magnetic Recording Film and Method for Producing Same
An FePt-based sintered sputtering target containing C and/or BN, wherein an area ratio of AgCu alloy grains on a polished surface of a cross section that is perpendicular to a sputtered surface of the sputtering target is 0.5% or more and 15% or less. An object of this invention is to provide a sputtering target capable of reducing particles generation during sputtering and efficiently depositing a magnetic thin film of a magnetic recording medium.
IRON NITRIDE MAGNETIC MATERIAL INCLUDING COATED NANOPARTICLES
The disclosure describes techniques for forming nanoparticles including Fe.sub.16N.sub.2 phase. In some examples, the nanoparticles may be formed by first forming nanoparticles including iron, nitrogen, and at least one of carbon or boron. The carbon or boron may be incorporated into the nanoparticles such that the iron, nitrogen, and at least one of carbon or boron are mixed. Alternatively, the at least one of carbon or boron may be coated on a surface of a nanoparticle including iron and nitrogen. The nanoparticle including iron, nitrogen, and at least one of carbon or boron then may be annealed to form at least one phase domain including at least one of Fe.sub.16N.sub.2, Fe.sub.16(NB).sub.2, Fe.sub.16(NC).sub.2, or Fe.sub.16(NCB).sub.2.
METHOD FOR MANUFACTURING A DEVICE HAVING A THREE-DIMENSIONAL MAGNETIC STRUCTURE
A method for manufacturing a device having a three-dimensional magnetic structure includes applying or introducing magnetic particles onto or into a carrier element. A plurality of at least partly interconnected cavities are formed between the magnetic particles, which contact one another at points of contact, by coating the arrangement of magnetic particles and the carrier. The cavities are penetrated at least partly by the layer generated when coating, resulting in the three-dimensional magnetic structure. A conductor loop arrangement is provided on the carrier or a further carrier. When a current flows through the conductor loop, an inductance of the conductor loop is changed by the three-dimensional magnetic structure, or a force acts on the three-dimensional magnetic structure or the conductor loop by a magnetic field caused by the current flow, or when the position of the three-dimensional magnetic structure is changed, a current flow is induced through the conductor loop.
METHOD FOR MANUFACTURING A DEVICE HAVING A THREE-DIMENSIONAL MAGNETIC STRUCTURE
A method for manufacturing a device having a three-dimensional magnetic structure includes applying or introducing magnetic particles onto or into a carrier element. A plurality of at least partly interconnected cavities are formed between the magnetic particles, which contact one another at points of contact, by coating the arrangement of magnetic particles and the carrier. The cavities are penetrated at least partly by the layer generated when coating, resulting in the three-dimensional magnetic structure. A conductor loop arrangement is provided on the carrier or a further carrier. When a current flows through the conductor loop, an inductance of the conductor loop is changed by the three-dimensional magnetic structure, or a force acts on the three-dimensional magnetic structure or the conductor loop by a magnetic field caused by the current flow, or when the position of the three-dimensional magnetic structure is changed, a current flow is induced through the conductor loop.
R-T-B BASED PERMANENT MAGNET
An R-T-B based permanent magnet includes R-T-B based compounds as main-phase crystal grains. R is a rare earth element. T is iron group element(s) essentially including Fe or Fe and Co. B is boron. A two-grain boundary is contained between the two adjacent main-phase crystal grains. An average grain size of the main-phase crystal grains is 0.9 μm or more and 2.8 μm or less. A thickness of the two-grain boundary is 5 nm or more and 200 nm or less.
R-T-B BASED PERMANENT MAGNET
An R-T-B based permanent magnet includes R-T-B based compounds as main-phase crystal grains. R is a rare earth element. T is iron group element(s) essentially including Fe or Fe and Co. B is boron. A two-grain boundary is contained between the two adjacent main-phase crystal grains. An average grain size of the main-phase crystal grains is 0.9 μm or more and 2.8 μm or less. A thickness of the two-grain boundary is 5 nm or more and 200 nm or less.
FeNi ordered alloy, FeNi ordered alloy magnet, and method for manufacturing FeNi ordered alloy
An FeNi ordered alloy has an L1.sub.0 ordered structure, a mean order degree of 0.4 or more throughout a material, and a coercivity of 87.5 kA/m or more. For example, a nitriding treatment of an FeNi random alloy is performed and then a nitriding treatment is performed to obtain an L1.sub.0-FeNi ordered alloy. A volume mean particle size of a FeNi random alloy is, for example, 45 nm or more, and a treatment temperature of the nitriding treatment is, for example, greater than or equal to 300 degrees Celsius and is less than or equal to 500 degrees Celsius, and a treatment period is, for example, 10 hours or longer.
SYSTEM AND METHOD FOR PERTURBING A PERMANENT MAGNET ASYMMETRIC FIELD TO MOVE A BODY
A system and method for perturbing a permanent magnet asymmetric field to move a body includes a rotating body configured to rotate about a rotation axis, a permanent magnet arrangement arranged on the rotating body containing two or more permanent magnets, and a perturbation element. The permanent magnet arrangement is configured such that an asymmetric magnetic field is generated by the permanent magnets about a perturbation point. Actuation of the perturbation element at or near the perturbation point causes a tangential magnetic force on the rotating body and/or the permanent magnet arrangement, thereby causing the rotating body to rotate about the rotation axis. The disclosure may also be used for linear motion of a body.
SYSTEM AND METHOD FOR PERTURBING A PERMANENT MAGNET ASYMMETRIC FIELD TO MOVE A BODY
A system and method for perturbing a permanent magnet asymmetric field to move a body includes a rotating body configured to rotate about a rotation axis, a permanent magnet arrangement arranged on the rotating body containing two or more permanent magnets, and a perturbation element. The permanent magnet arrangement is configured such that an asymmetric magnetic field is generated by the permanent magnets about a perturbation point. Actuation of the perturbation element at or near the perturbation point causes a tangential magnetic force on the rotating body and/or the permanent magnet arrangement, thereby causing the rotating body to rotate about the rotation axis. The disclosure may also be used for linear motion of a body.
MAGNETIC BETA-TRICALCIUM PHOSPHATE SPHERICAL PARTICLES AND METHOD FOR PRODUCING THE SAME
The present disclosure provides a method for producing beta-tricalcium phosphate spherical particles containing magnetic ions. The method includes mixing acidic amino acid monomers, metal salt of magnetic ions and metal salt of calcium ions in de-ionized water to form a first solution; dissolve phosphate in de-ionized water to form a second solution; mixing the first and second solutions to form a third solution; and performing hydrothermal synthesis of the third solution.