Integrated circuits and coupled inductors with isotropic magnetic cores, and methods for fabricating integrated circuits and coupled inductors with isotropic magnetic cores are provided. In an embodiment, a coupled inductor includes a first inductor coil arranged around a coil center and a second inductor coil arranged around the coil center. The second inductor coil is interleaved with the first inductor coil, and the first and second inductor coils form an interleaved inductor coil. The coupled inductor further includes an isotropic magnetic core surrounding a portion of the interleaved inductor coil and passing through the coil center.

Methods for forming magnetic tunnel junctions and structures thereof include cryogenic etching the layers defining the magnetic tunnel junction without lateral diffusion of reactive species.

A quantum computing device is provided, including a plurality of spin-based quantum-dot qubits that each include one or more quantum dots. The plurality of spin-based quantum-dot qubits also each include a nanomagnet including an amorphous ferromagnetic alloy.

The output voltage of an MRAM is increased by means of an Fe(001)/MgO(001)/Fe(001) MTJ device, which is formed by microfabrication of a sample prepared as follows: A single-crystalline MgO (001) substrate is prepared. An epitaxial Fe(001) lower electrode (a first electrode) is grown on a MgO(001) seed layer at room temperature, followed by annealing under ultrahigh vacuum. A MgO(001) barrier layer is epitaxially formed on the Fe(001) lower electrode (the first electrode) at room temperature, using a MgO electron-beam evaporation. A Fe(001) upper electrode (a second electrode) is then formed on the MgO(001) barrier layer at room temperature. This is successively followed by the deposition of a Co layer on the Fe(001) upper electrode (the second electrode). The Co layer is provided so as to increase the coercive force of the upper electrode in order to realize an antiparallel magnetization alignment.

The output voltage of an MRAM is increased by means of an Fe(001)/MgO(001)/Fe(001) MTJ device, which is formed by microfabrication of a sample prepared as follows: A single-crystalline MgO (001) substrate is prepared. An epitaxial Fe(001) lower electrode (a first electrode) is grown on a MgO(001) seed layer at room temperature, followed by annealing under ultrahigh vacuum. A MgO(001) barrier layer is epitaxially formed on the Fe(001) lower electrode (the first electrode) at room temperature, using a MgO electron-beam evaporation. A Fe(001) upper electrode (a second electrode) is then formed on the MgO(001) barrier layer at room temperature. This is successively followed by the deposition of a Co layer on the Fe(001) upper electrode (the second electrode). The Co layer is provided so as to increase the coercive force of the upper electrode in order to realize an antiparallel magnetization alignment.

A nanogranular magnetic film includes first phases comprised of nano-domains dispersed in a second phase. The first phases include Fe and Co. The second phase includes a second phase compound including at least one selected from the group consisting of O, N, and F. A measurement range is determined in the nanogranular magnetic film. The measurement range is divided with grids including at least 80,000 grids each measuring 1 nm1 nm1 nm. Fe/(Fe+Co) and a concentration of the second phase compound of each of the grids are measured in atomic ratio. Provided that the grids are classified into MX-rich grids and MX-poor grids, a CV of Fe/(Fe+Co) of the MX-rich grids is larger than a CV of Fe/(Fe+Co) of the MX-poor grids.

A nanogranular magnetic film includes first phases comprised of nano-domains dispersed in a second phase. The first phases include Fe and Co. The second phase includes at least one selected from the group consisting of O, N, and F. A CV of Fe/(Fe+Co) of grids is 0.150 or more and 0.500 or less, provided that a measurement range is determined in the nanogranular magnetic film, the measurement range is divided with the grids including at least 80,000 grids each measuring 1 nm1 nm1 nm, and Fe/(Fe+Co) of each of the grids is measured in atomic ratio.