A magnetoresistive effect element, which includes: a first ferromagnetic layer as a magnetization fixed layer; a second ferromagnetic layer as a magnetization free layer; and a nonmagnetic spacer layer provided between the first ferromagnetic layer and the second ferromagnetic layer. The nonmagnetic spacer layer includes an Ag alloy represented by General Formula (1), and thereby lattice mismatch between the nonmagnetic spacer layer, and the first ferromagnetic layer and/or the second ferromagnetic layer is reduced, compared to lattice mismatch when the nonmagnetic spacer layer is formed of Ag,

Ag.sub. X.sub.1-(1)

where X indicates one element selected from the group made of Al, Cu, Ga, Ge, As, Y, La, Sm, Yb, and Pt, and 0<<1.

A magnetoresistance effect element has a first ferromagnetic metal layer, a second ferromagnetic metal layer, and a tunnel barrier layer that is sandwiched between the first and second ferromagnetic metal layers, the tunnel barrier layer is expressed by a chemical formula of AB.sub.2O.sub.x, and has a spinel structure in which cations are arranged in a disordered manner, A represents a divalent cation that is either Mg or Zn, and B represents a trivalent cation that includes a plurality of elements selected from the group consisting of Al, Ga, and In.

A laminated structure includes a ferromagnetic layer, a multiferroic layer provided on one surface of the ferromagnetic layer, and a ferroelectric layer which is provided on the multiferroic layer opposite to the ferromagnetic layer and has a permittivity greater than that of the multiferroic layer.

Described is an apparatus which comprises: an input magnet formed of one or more materials with a sufficiently high anisotropy and sufficiently low magnetic saturation to increase injection of spin currents; and a first interface layer coupled to the input magnet, wherein the first interface layer is formed of non-magnetic material such that the first interface layer and the input magnet together have sufficiently matched atomistic crystalline layers.

A magnetic device may include a layer stack. The layer stack may include a first ferromagnetic layer; a non-magnetic spacer layer on the first ferromagnetic layer, where the non-magnetic spacer layer comprises at least one of Ru, Ir, Ta, Cr, W, Mo, Re, Hf, Zr, or V; a second ferromagnetic layer on the non-magnetic spacer layer; and an oxide layer on the second ferromagnetic layer. The magnetic device also may include a voltage source configured to apply a bias voltage across the layer stack to cause switching of a magnetic orientation of the second ferromagnetic layer without application of an external magnetic field or a current. A thickness and composition of the non-magnetic spacer layer may be selected to enable a switching direction of the magnetic orientation of the second ferromagnetic layer to be controlled by a sign of the bias voltage.

A magnetoresistive effect element includes a first ferromagnetic layer, a second ferromagnetic layer, a nonmagnetic layer, and at least one of a first nonmagnetic insertion layer provided directly on a lower surface of the nonmagnetic layer and a second nonmagnetic insertion layer provided directly on an upper surface of the nonmagnetic layer. The first nonmagnetic insertion layer and the second nonmagnetic insertion layer include an Ag alloy represented by General Formula (1): Ag.sub.X.sub.1- where X indicates one element selected from the group consisting of Al, Cu, Ga, Ge, As, Y, La, Sm, Yb, and Pt, and 0<<1.

An embodiment includes an apparatus comprising: a substrate; a magnetic tunnel junction (MTJ), on the substrate, comprising a fixed layer, a free layer, and a dielectric layer between the fixed and free layers; and a first synthetic anti-ferromagnetic (SAF) layer, a second SAF layer, and an intermediate layer, which includes a non-magnetic metal, between the first and second SAF layers; wherein the first SAF layer includes a Heusler alloy. Other embodiments are described herein.

A magnetoresistive effect element, which includes: a first ferromagnetic layer as a magnetization fixed layer; a second ferromagnetic layer as a magnetization free layer; and a nonmagnetic spacer layer provided between the first ferromagnetic layer and the second ferromagnetic layer. The nonmagnetic spacer layer includes an Ag alloy represented by General Formula (1), and thereby lattice mismatch between the nonmagnetic spacer layer, and the first ferromagnetic layer and/or the second ferromagnetic layer is reduced, compared to lattice mismatch when the nonmagnetic spacer layer is formed of Ag,
Ag.sub.X.sub.1-(1)
where X indicates one element selected from the group made of Al, Cu, Ga, Ge, As, Y, La, Sm, Yb, and Pt, and 0<<1.

A magnetic structure includes a magnetic tunnel junction based on a synthetic antiferromagnetic free layer which is regulated by an electric field, and a spin-orbit layer located below the magnetic tunnel junction. The transformation from the antiferromagnetic coupling to the ferromagnetic coupling of the free layer based on a synthetic antiferromagnetic multilayer structure is controlled by an electric field. A spin-orbit torque magnetic random access memory, which includes the magnetic structure, is able to realize stable data writing under the combined interaction of electric field and current, and has advantages of simple structure for scaling, ultralow power consumption, ultrahigh speed of switching, radiation resistance and non-volatility.

There is provided a magnetoresistive effect element having improved magnetoresistive effect. A magnetoresistive effect element MR includes a first ferromagnetic layer 4 as a fixed magnetization layer, a second ferromagnetic layer 6 as a free magnetization layer, and a nonmagnetic spacer layer 5 provided between the first ferromagnetic layer 4 and the second ferromagnetic layer 6. The nonmagnetic spacer layer 5 includes at least one of a first insertion layer 5A provided under the nonmagnetic spacer layer 5 and a second insertion layer 5C provided over the nonmagnetic spacer layer 5. The first insertion layer 5A and the second insertion layer 5C are made of Fe.sub.2TiSi.