A magnetic field application device according to an embodiment includes a first coil assembly and a second coil assembly spaced apart in parallel from each other, a power supply configured to apply respective currents to the first coil assembly and the second coil assembly, a controller, and a resonator accommodation unit disposed between the first coil assembly and the second coil assembly, wherein each of the first coil assembly and the second coil includes a coil configured to generate a magnetic field, a guide member connected to a terminal of the coil, a magnetic material mount connected to a terminal of the guide member, and a magnetic material fixed to the magnetic material mount, and wherein the controller is configured to control the currents applied from the power supply to the first coil assembly and the second coil assembly.

Apparatus for generating spin waves comprising a body (102) of magnetic material and an elastic wave generator (120), wherein the body (102) has a surface (108) and the elastic wave generator (120) is arranged to transmit elastic waves so that they propagate through the body (102) towards the surface (108) and are reflected at the surface to form a standing elastic wave in the body (102), thereby generating spin waves.

A switching device is disclosed. The switching device includes a spin-orbit coupling (SOC) layer, a pure spin conductor (PSC) layer disposed atop the SOC layer, a ferromagnetic (FM) layer disposed atop the PSC layer, and a normal metal (NM) layer sandwiched between the PSC layer and the FM layer. The PSC layer is a ferromagnetic insulator (FMI) is configured to funnel spins from the SOC layer onto the NM layer and to further provide a charge insulation so as to substantially eliminate current shunting from the SOC layer while allowing spins to pass through. The NM layer is configured to funnel spins from the PSC layer into the FM layer.

A switching device is disclosed. The switching device includes a spin-orbit coupling (SOC) layer, a pure spin conductor (PSC) layer disposed atop the SOC layer, a ferromagnetic (FM) layer disposed atop the PSC layer, and a normal metal (NM) layer sandwiched between the PSC layer and the FM layer. The PSC layer is a ferromagnetic insulator (FMI) is configured to funnel spins from the SOC layer onto the NM layer and to further provide a charge insulation so as to substantially eliminate current shunting from the SOC layer while allowing spins to pass through. The NM layer is configured to funnel spins from the PSC layer into the FM layer.

A differential magnetoelectric spin-orbit (MESO) logic device is provided where two ports are used to connect the spin orbital module of the MESO device and a ferroelectric capacitor. In some examples, an insulating layer is added to decouple current paths.

A monolithic multiferroic heterostructure fabricated using CSD (chemical solution deposition) is disclosed. The monolithic heterostructure includes a substrate, a ferromagnetic layer, a ferroelectric layer, and one or more seed layers that enhance crystallinity and promote high frequency performance.

A switching device is disclosed. The switching device includes a spin-orbit coupling (SOC) layer, a pure spin conductor (PSC) layer disposed atop the SOC layer, a ferromagnetic (FM) layer disposed atop the PSC layer, and a normal metal (NM) layer sandwiched between the PSC layer and the FM layer. The PSC layer is a ferromagnetic insulator (FMI) is configured to funnel spins from the SOC layer onto the NM layer and to further provide a charge insulation so as to substantially eliminate current shunting from the SOC layer while allowing spins to pass through. The NM layer is configured to funnel spins from the PSC layer into the FM layer.

A switching device is disclosed. The switching device includes a spin-orbit coupling (SOC) layer, a pure spin conductor (PSC) layer disposed atop the SOC layer, a ferromagnetic (FM) layer disposed atop the PSC layer, and a normal metal (NM) layer sandwiched between the PSC layer and the FM layer. The PSC layer is a ferromagnetic insulator (FMI) is configured to funnel spins from the SOC layer onto the NM layer and to further provide a charge insulation so as to substantially eliminate current shunting from the SOC layer while allowing spins to pass through. The NM layer is configured to funnel spins from the PSC layer into the FM layer.

Apparatus for generating spin waves comprising a body (102) of magnetic material and an elastic wave generator (120), wherein the body (102) has a surface (108) and the elastic wave generator (120) is arranged to transmit elastic waves so that they propagate through the body (102) towards the surface (108) and are reflected at the surface to form a standing elastic wave in the body (102), thereby generating spin waves.

A switching device is disclosed. The switching device includes a spin-orbit coupling (SOC) layer, a pure spin conductor (PSC) layer disposed atop the SOC layer, a ferromagnetic (FM) layer disposed atop the PSC layer, and a normal metal (NM) layer sandwiched between the PSC layer and the FM layer. The PSC layer is a ferromagnetic insulator (FMI) is configured to funnel spins from the SOC layer onto the NM layer and to further provide a charge insulation so as to substantially eliminate current shunting from the SOC layer while allowing spins to pass through. The NM layer is configured to funnel spins from the PSC layer into the FM layer.