A light modulated electron source utilizes a photon-beam source to modulate the emission current of an electron beam emitted from a silicon-based field emitter. The field emitter's cathode includes a protrusion fabricated on a silicon substrate and having an emission tip covered by a coating layer. An extractor generates an electric field that attracts free electrons toward the emission tip for emission as part of the electron beam. The photon-beam source generates a photon beam including photons having an energy greater than the bandgap of silicon, and includes optics that direct the photon beam onto the emission tip, whereby each absorbed photon creates a photo-electron that combines with the free electrons to enhance the electron beam's emission current. A controller modulates the emission current by controlling the intensity of the photon beam applied to the emission tip. A monitor measures the electron beam and provides feedback to the controller.

The present disclosure provides an electron source operating method, the electron source including at least one emission site fixed on a tip, the emission site being a reaction product formed by metal atoms of a surface of the tip and gas molecules under an electric field, and the operating method comprises emitting electrons by controlling operating parameters of the electron source.

A device for controlling electron flow is provided. The device comprises a cathode, an elongate electrical conductor embedded in a diamond substrate, an anode, and a control electrode provided on the substrate surface for modifying the electric field in the region of the end of the conductor. A method of manufacturing the device is also provided.

A field emission cathode electron source and an array thereof provided by embodiments of the present disclosure include a substrate, and a cathode, a cathode tip and a gate disposed on the same side of the substrate. The cathode, the cathode tip and the gate are disposed on an upper surface of the substrate, and the cathode tip is connected to the cathode, and the gate is located on a side of the cathode tip away from the cathode and an electron emission end of the cathode tip is directed toward a side of the substrate close to the gate. The cathode tips are arranged on the substrate in parallel with the substrate. Compared with the three dimensional stacked structure in the prior art, the present disclosure has a higher stability and reliability and is suitable for a large-scale integration.

A photocathode can include a body fabricated of a wide bandgap semiconductor material, a metal layer, and an alkali halide photocathode emitter. The body may have a thickness of less than 100 nm and the alkali halide photocathode may have a thickness less than 10 nm. The photocathode can be illuminated with a dual wavelength scheme.

A photocathode utilizes an field emitter array (FEA) integrally formed on a silicon substrate to enhance photoelectron emissions, and a thin boron layer disposed directly on the output surface of the FEA to prevent oxidation. The field emitters are formed by protrusions having various shapes (e.g., pyramids or rounded whiskers) disposed in a two-dimensional periodic pattern, and may be configured to operate in a reverse bias mode. An optional gate layer is provided to control emission currents. An optional second boron layer is formed on the illuminated (top) surface, and an optional anti-reflective material layer is formed on the second boron layer. An optional external potential is generated between the opposing illuminated and output surfaces. An optional combination of n-type silicon field emitter and p-i-n photodiode film is formed by a special doping scheme and by applying an external potential. The photocathode forms part of sensor and inspection systems.

A flat top laser beam is used to generate an electron beam with a photocathode that can include an alkali halide. The flat top profile can be generated using an optical array. The laser beam can be split into multiple laser beams or beamlets, each of which can have the flat top profile. A phosphor screen can be imaged to determine space charge effects or electron energy of the electron beam.

The present disclosure generally relates to field emission cathode structure for a field emission arrangement, specifically adapted for enhance reliability and prolong the lifetime of the field emission arrangement by arranging a getter element underneath a gas permeable portion of the field emission cathode structure. The present disclosure also relates to a field emission lighting arrangement comprising such a field emission cathode structure and to a field emission lighting system.

An emitter with a diameter of 100 nm or less is used with a protective cap layer and a diffusion barrier between the emitter and the protective cap layer. The protective cap layer is disposed on the exterior surface of the emitter. The protective cap layer includes molybdenum or iridium. The emitter can generate an electron beam. The emitter can be pulsed.

A field emission cathode electron source and an array thereof provided by embodiments of the present disclosure include a substrate, and a cathode, a cathode tip and a gate disposed on the same side of the substrate. The cathode, the cathode tip and the gate are disposed on an upper surface of the substrate, and the cathode tip is connected to the cathode, and the gate is located on, a side of the cathode tip away from the cathode and an electron emission end of the cathode tip is directed toward a side of the substrate close to the gate. The cathode tips are arranged on the substrate in parallel with the substrate. Compared with the three dimensional stacked structure in the prior art, the present disclosure has a higher stability and reliability and is suitable for a large-scale integration.