A multi-beam scanning electron microscope (charged particle beam device) 100 includes an electron gun (charged particle irradiation source) 101 configured to irradiate a sample 104 with an electron beam (charged particle beam) 103, a detector 106 having a detection region corresponding to the charged particle beam 103 and configured to output an electrical signal 107 corresponding to a reaching position when secondary particles 105 generated from the sample 104 by irradiating the sample 104 with the charged particle beam 103 reach the detection region, and a signal processing block 115 configured to perform measurement of a charge amount of the sample 104 by the charged particle beam 103 and generation of an inspection image of the sample 104 in parallel based on the electrical signal 107 output from the detector 106.

The present invention is related to an apparatus for transporting a charged particle beam. The apparatus may include means for scanning the charged particle beam on a target, a dipole magnet arranged upstream of the means for scanning, at least three quadrupole lenses arranged between the dipole magnet and the means for scanning and means for adjusting the field strength of said at least three quadrupole lenses in function of the scanning angle of the charged particle beam. The apparatus can be made at least single achromatic.

The purpose of the present invention is to provide a charged particle beam device with which it is possible to minimize the beam irradiation amount while maintaining a high measurement success rate. The present invention is a charged particle beam device provided with a control device for controlling a scan deflector on the basis of selection of a predetermined number n of frames, wherein the control device controls the scan deflector so that a charged particle beam is selectively scanned on a portion on a sample corresponding to a pixel satisfying a predetermined condition or a region including the portion on the sample from an image obtained by scanning the charged particle beam for a number m of frames (m≧1), the number m of frames being smaller than the number n of frames.

In this invention, vibrations generated by a freezer from a cooling mechanism for cooling an ion source emitter tip are prevented from being transmitted to the emitter tip as much as possible, while the cooling capability of the cooling mechanism is improved widely. The ion beam device (10) is equipped with: an ion source housing (22) provided with an emitter tip (45) and defining an ion source chamber (27) supplied with an ionization gas or gas molecules; a gas pot (51) provided in the ion source chamber (27) so as to be thermally connected to the emitter tip (45) and accommodated so as to have no direct physical contact with a cooling stage (57) of a freezer (52); and a spacer (59) provided on the peripheral surface of the cooling stage (57) housed by the gas pot (51) and maintaining a given interval or greater between the peripheral surface of the cooling stage (57) and the internal peripheral surface of the gas pot (52).

An ion implantation apparatus includes a beam scanner that provides reciprocating beam scanning in a beam scanning direction, a beam measurer that measures a beam current intensity distribution in the beam scanning direction at a downstream of the beam scanner, and a controller. The controller includes a scanning waveform preparing unit that determines whether or not a measured beam current intensity distribution measured by the beam measurer with use of a given scanning waveform fits a target non-uniform dose amount distribution, and that, in a case of fitting, correlates the given scanning waveform with the target non-uniform dose amount distribution.

A scanning electron microscope includes: a retarding power source configured to apply a retarding voltage to a specimen; a combined objective lens configured to focus the primary beam on a surface of the specimen; an electrostatic deflection system configured to deflect the primary beam to direct the primary beam to each point in a field of view on the surface of the specimen; a first scintillation detector having a first scintillator configured to emit light upon incidence of secondary electrons which have been emitted from the specimen; a Wien filter configured to deflect the secondary electrons in one direction without deflecting the primary beam; and a second scintillation detector having a second scintillator configured to detect the secondary electrons deflected by the Wien filter. The second scintillator has a distal end located away from the axis of the primary beam.

A multi-beam lens device is described, which includes: a first beam passage for a first charged particle beam formed along a first direction between a first beam inlet of the first beam passage and a first beam outlet of the first beam passage; a second beam passage for a second charged particle beam formed along a second direction between a second beam inlet of the second beam passage and a second beam outlet of the second beam passage, wherein the first direction and the second direction are inclined with respect to each other by an angle (α) of 5° or more such that the first beam passage approaches the second beam passage toward the first beam outlet; and a common excitation coil or a common electrode arrangement configured for focussing the first charged particle beam and the second charged particle beam. Further, a charged particle beam device as well as a method of operating a multi-beam lens device are described.

The objective of the present invention is to provide an ion beam device capable of forming a nanopyramid stably having one atom at the front end of an emitter tip even when the cooling temperature is lowered in order to observe a sample with a high signal-to-noise ratio. In the present invention, the ion beam device, wherein an ion beam generated from an electric field-ionized gas ion source is irradiated onto the sample to observe or process the sample, holds the temperature of the emitter tip at a second temperature higher than a first temperature for generating the ion beam and lower than room temperature, sets the extraction voltage to a second voltage higher than the first voltage used when generating the ion beam, and causes field evaporation of atoms at the front end of the emitter tip, when forming the nanopyramid having one atom at the front end of the emitter tip.

A method and an apparatus are provided for inspecting a sample. The apparatus includes a sample holder for holding the sample, a charged particle column for generating and focusing one or more charged particle beams at one or more charged particle beam spots onto the sample, a scanning deflector for moving the charged particle beam spot(s) over the sample, a photon detector configured for detecting photons created when the one or more charged particle beams impinge on the sample or when the one or more charged particle beams impinge onto a layer of luminescent material after transmission through the sample, an optical assembly for projecting or imaging at least part of the photons from the charged particle beam spot(s) along an optical beam path onto the photon detector, and a shifting unit for shifting the optical beam path and/or the photon detector with respect to each other.

A beam adjustment method includes: installing, on an irradiation surface to which an electron beam is radiated, a detection part having a Faraday cup catching electrical charges of the electron beam, and installing, on a side of an electron gun further than the detection part, a shielding plate having opening holes through which the electron beam is passable. The method includes causing, upon performing beam diameter measurement processing, the electron beam to pass through the opening holes, and radiating the electron beam to the Faraday cup. In addition, the method includes radiating, upon performing normal processing, the electron beam to the shielding plate.