Provided is an ion implanter or the like capable of shortening a replacement time of workpieces. An ion implantation method includes (a) deflecting an ion beam by at least one of an electric field and a magnetic field in an irradiation-disabled direction in which a wafer is incapable of being irradiated with the ion beam after a first wafer is irradiated with the ion beam directed in an irradiation-enabled direction in which the wafer is capable of being irradiated with the ion beam; (b) moving the first wafer from an ion implantation position, subsequently to the step (a); (e) disposing a second wafer different from the first wafer at the ion implantation position, subsequently to the step (b); and (f) returning the ion beam from the irradiation-disabled direction to the irradiation-enabled direction, subsequently to the step (e).

A method of imaging a sample with a charged particle beam device, comprising: determining a first focusing strength of an objective lens of the charged particle beam device, the first focusing strength being adapted to focus a charged particle beam on a first surface region of the sample; determining a first focal subrange of a plurality of focal subranges such that the first focusing strength is within the first focal subrange, wherein the plurality of focal subranges is associated with a set of values of a calibration parameter; determining a first value of the calibration parameter, the first value being associated with the first focal subrange; and imaging the first surface region with the first value.

The invention provides an electron source including a columnar chip of a hexaboride single crystal, a metal pipe that holds the columnar chip of the hexaboride single crystal, and a filament connected to the metal pipe at a central portion. The columnar chip of the hexaboride single crystal is formed into a cone shape at a portion closer to a tip than a portion held in the metal pipe, and a tip end portion having the cone shape has a (310) crystal face. Schottky electrons are emitted from the (310) crystal face. According to the invention, it is possible to provide a novel electron source having monochromaticity, long-term stability of an emitter current, and high current density.

In a particle beam irradiation system, upon receipt of a signal to stop irradiation of a charged particle beam, the signal outputted from a scanning controller, an accelerator and transport system controller stops emission of the charged particle beam from a charged particle beam generation unit to the irradiation unit, the scanning controller determines, according to an irradiation dose of the charged particle beam at one of a plurality of spots that has been irradiated with the charged particle beam until immediately before the accelerator and transport system controller stops the emission, the irradiation dose measured by the irradiation dose monitor from when the signal to stop the irradiation is outputted, whether or not to skip the irradiation of the charged particle beam at another one of the plurality of spots subsequent to the one of the plurality of spots, so as to control the accelerator and transport system controller.

A charged particle beam device includes: a charged particle beam source; an analyzer that analyzes and detects particles including secondary electrons and backscattered charged particles that are emitted from a specimen by irradiating the specimen with a primary charged particle beam emitted from the charged particle beam source; a bias voltage applying unit that applies a bias voltage to the specimen; and an analysis unit that extracts a signal component of the secondary electrons based on a first spectrum obtained by detecting the particles with the analyzer in a state where a first bias voltage is applied to the specimen, and a second spectrum obtained by detecting the particles with the analyzer in a state where a second bias voltage different from the first bias voltage is applied to the specimen.

Arrangements involving objective lens array assemblies for charged-particle assessment tools are disclosed. In one arrangement, the assembly comprises an objective lens array and a control lens array. Each objective lens projects a respective sub-beam of a multi-beam onto a sample. The control lens array is associated with the objective lens array and positioned up-beam of the objective lens array. The control lenses pre-focus the sub-beams.

A multiple particle beam microscope and an associated method can provide a fast autofocus around an adjustable working distance. A system can have one or more fast autofocus correction lenses for adapting, in high-frequency fashion, the focusing, the position, the landing angle and the rotation of individual particle beams upon incidence on a wafer surface during the wafer inspection. Fast autofocusing in the secondary path of the particle beam system can be implemented in analogous fashion. An additional increase in precision can be attained via fast aberration correction mechanism in the form of deflectors and/or stigmators.

The dual focused ion beam and scanning electron beam system includes an electron source that generates an electron beam and an ion source that generates an ion beam. The electron beam column directs an electron beam at a normal angle relative to a top surface of the stage. An ion beam column directs the ion beam at the stage. The ion beam is at an angle relative to the electron beam. A detector receives the electron beam reflected from the wafer on the stage.

A charged particle beam apparatus that forms a probe with a charged particle beam and scans a specimen with the probe to acquire a scanning image. The charged particle beam apparatus includes an optical system for scanning the specimen with the probe; a detector that detects a signal generated from the specimen through the scanning of the specimen with the probe; and a control unit that controls the optical system. The control unit performs correction processing of acquiring a reference image obtained by the scanning of the specimen with the probe, comparing the reference image to a criterion image to determine a drift amount, and correcting a displacement of an irradiation position with the probe on the specimen based on the drift amount; and processing of setting a frequency with which the correction processing is to be performed based on the drift amount.

Provided are a multistage-connected multipole and a charged particle beam device that can be produced with precision in machining without requiring precision in brazing between a pole and an insulation material. This multi-stage connected multipole 100 comprises: a plurality of poles Q1-Q4 that are arranged along the optical-axis direction of a charged particle beam, and that have cutouts Non surfaces facing each other; and braces P1-P3 that are arranged between the plurality of poles Q1-Q4 and are made of an insulator. The poles Q1-Q4 and the braces P1-P3 are joined by fitting the braces P1-P3 into the cutouts N and applying brazing so as to be interposed by a bonding material.