The plasma processing method according to the present disclosure is performed in a plasma processing apparatus. The plasma processing method comprises preparing a substrate including a silicon-containing film and a carbon-containing film formed on the silicon-containing film; setting a temperature of the substrate to a first temperature of 0° C. or less; supplying H.sub.2O to the substrate using a first processing gas containing comprising at least one of (a) gas comprising hydrogen atoms and oxygen atoms, and (b) a first gas comprising hydrogen atoms and a second gas comprising oxygen atoms; forming plasma from the first processing gas using a radio frequency and etching the carbon-containing film; setting the temperature of the substrate to a second temperature different from the first temperature; supplying a second processing gas containing a hydrogen- and fluorine-containing gas or both a hydrogen-containing gas and a fluorine-containing gas to the substrate; and forming plasma from the second processing gas using a radio frequency and etching the silicon-containing film.

A substrate processing system for selectively etching a layer on a substrate includes an upper chamber region, an inductive coil arranged around the upper chamber region and a lower chamber region including a substrate support to support a substrate. A gas distribution device is arranged between the upper chamber region and the lower chamber region and includes a plate with a plurality of holes. A cooling plenum cools the gas distribution device and a purge gas plenum directs purge gas into the lower chamber. A surface to volume ratio of the holes is greater than or equal to 4. A controller selectively supplies an etch gas mixture to the upper chamber and a purge gas to the purge gas plenum and strikes plasma in the upper chamber to selectively etch a layer of the substrate relative to at least one other exposed layer of the substrate.

An inductively-coupled plasma (ICP) generation system may include a dielectric tube, a first inductive coil structure to enclose the dielectric tube, an RF power supply, a first main capacitor between a positive output terminal of the RF power supply and one end of the first inductive coil structure, and a second main capacitor between a negative output terminal of the RF power supply and an opposite end of the first inductive coil structure. The first inductive coil structure may include inductive coils connected in series to each other and placed at different layers, the inductive coils having at least one turn at each layer, and auxiliary capacitors, which are respectively provided between adjacent ones of the inductive coils to distribute a voltage applied to the inductive coils.

A plasma generating apparatus according to an embodiment of the present invention comprises: a pair of electrodes arranged in a dielectric discharge tube; an initial discharge induction coil module; and a main discharge induction coil module. The initial discharge induction coil module and the main discharge induction coil module are connected to an RF power source, and the RF power source provides RF power having different resonance frequencies to the initial discharge induction coil module and the main discharge induction coil module, respectively.

An ion source. The ion source may include a plasma chamber to house a plasma, and an extraction assembly, disposed along a side of the plasma chamber, and comprising at least one extraction aperture. The ion source may further include an antenna assembly, extending through the plasma chamber, along a first axis. The antenna assembly may include a dielectric enclosure, a plurality of conductive antennae, extending along the first axis within the dielectric enclosure.

According to one embodiment, there is provided a substrate processing apparatus including a first electrode, a second electrode, a third electrode, a first power supply circuit, a second power supply circuit and a control line. The first electrode is arranged in a processing chamber, and on which a substrate can be placed. The second electrode faces the first electrode. The third electrode is arranged along a side wall in the processing chamber and facing the first electrode. The first power supply circuit is connected to the first electrode. The second power supply circuit is connected to the third electrode. The control line is connected to the first power supply circuit and the second power supply circuit.

An apparatus for perform metal etching and plasma ashing includes: a processing chamber having an enclosed area; an electrostatic chuck disposed in the enclosed area and configured to secure a wafer, the electrostatic chuck connected with a bias power; at least one coil connected with a source power; a etchant conduit configured provide an etchant to a metal of the wafer within the processing chamber in accordance with a photoresist mask of the wafer; and a gas intake conduit connected with a gas source, wherein the gas intake conduit is configured to supply the processing chamber with a gas from the gas source during performance of plasma ashing within the processing chamber.

A treatment system (100) comprises a process chamber (101) for dynamic or static treatment of at least one substrate. An inductively coupled plasma source, ICP source (120, 120′), comprises at least one inductor (130a, 130b) extending along the longitudinal direction of the ICP source (120, 120′), a gas supply device (141, 142) for one or a plurality of process gases, and a gas directing arrangement (150) disposed in the process chamber (101), said gas directing arrangement (150) extending along the longitudinal direction of the ICP source (120, 120′) and partially surrounding the at least one inductor (130a, 130b).

A lid assembly for a processing chamber in a substrate processing system includes a dielectric window. The dielectric window includes an upper portion having flat upper and lower surfaces. The lower surface is a plasma-facing surface of the dielectric window. A lower portion of the dielectric window is cylindrical and extends downward from the lower surface and an outer diameter of the lower portion at least one of is aligned with a gap between inner and outer coils arranged above the dielectric window and overlaps one of the inner and outer coils.

A substrate treatment apparatus including a chamber; a lower electrode in the chamber, wherein the substrate is on the lower electrode; an upper electrode in the chamber, and above the lower electrode; a pulse signal generator configured to generate a pulse signal; and a bias power supply configured to generate bias power having a pulsed non-sinusoidal waveform using the pulse signal, and supply the generated bias power to the lower electrode, wherein the bias power supply includes a DC power generator configured to receive the pulse signal and generate a direct-current (DC) voltage subjected to feedforward compensation based on the pulse signal; and a modulator configured to generate a power signal having a non-sinusoidal waveform using the DC voltage, and filter the power signal using the pulse signal to generate the bias power having the pulsed non-sinusoidal waveform.