Patent classifications
H01J37/3211
Plasma processing apparatus and control method
A plasma processing apparatus includes a main container, one or more radio frequency antennas, a plurality of metal windows, and a plasma detector. The one or more radio frequency antennas are configured to generate inductively coupled plasma in a plasma generation region in the main container. The metal windows are disposed between the plasma generation region and the radio frequency antennas while being insulated from each other and from the main container. Further, a plasma detector is connected to each of the metal windows and configured to detect a plasma state.
Array antenna and plasma processing apparatus
An array antenna radiates an electromagnetic wave into a chamber of a plasma processing apparatus. The array antenna includes antennas and coupling prevention elements arranged at intervals between the antennas. Each of the coupling prevention elements includes a first member connected to a ceiling wall which is a ground surface in the chamber and a second member connected to a tip end of the first member or a vicinity of the tip end of the first member.
MULTI-ZONE COOLING OF PLASMA HEATED WINDOW
A plenum, positioned beneath a first coil and above a window disposed on a top portion of a processing chamber, has side walls and a top surface covering an upper surface of the window and has a first air inlet positioned at a center portion to receive airflow from a first air amplifier. The first air inlet includes holes to distribute the air across the window within the side walls to reduce hotspots at a center portion of the window. The plenum includes a second air inlet at an edge portion of the top surface to receive the airflow from a second air amplifier to reduce hotspots at an edge portion of the window, and a third air inlet between the center and edge portions of the top surface to receive the airflow from a third air amplifier to reduce hotspots at a middle portion of the window.
PLENUM ASSEMBLIES FOR COOLING TRANSFORMER COUPLED PLASMA WINDOWS
A plenum for a dielectric window of a substrate processing system includes a first inlet port, a second inlet port, and a body. The body includes: a first recessed area configured to hold a first coil; a second recessed area configured to hold a second coil; a third recessed area configured to oppose a first area of the dielectric window, receive a first coolant from the first inlet port, and direct the first coolant across the first area to cool a first portion of the dielectric window; and a fourth recessed area configured to oppose a second area of the dielectric window, receive a second coolant from the second inlet port, and direct the second coolant across the second area to cool a second portion of the dielectric window.
ANTENNA MECHANISM AND PLASMA PROCESSING DEVICE
According to the present invention, provided is an antenna mechanism 3 that adjusts the impedance of an antenna body through which a high-frequency current flows to generate plasma by means of a simple configuration, and generates plasma P, and comprises: the antenna body 31 through which high-frequency current flows; and one or a plurality of adjustment circuits 32 provided adjacent to the antenna body 31. The adjustment circuit 32 has a metal conductor 321 forming a closed circuit and a capacitor 322 forming the closed circuit.
ANTENNA MEMBER AND APPARATUS FOR TREATING SUBSTRATE
The inventive concept provides an antenna member. In an embodiment, the antenna member includes a first coil and a second coil which have a rotational symmetry to each other, and wherein the first coil includes a first supply terminal applied with a current and a first ground terminal connected to the ground, the second coil includes a second supply terminal applied with the current and a second ground terminal connected to the ground, and wherein the first coil and the second coil each include a first portion having an arc-shape and a second portion having an arc-shape which as a whole form one winding, and when seen from a side, the second portion has a relatively lower height than the first portion, and the second portion of the second coil is positioned below the first portion of the first coil, and the second portion of the first coil is positioned below the first portion of the second coil.
PLASMA PROCESSING APPARATUS AND PLASMA PROCESSING METHOD USING THE SAME
A plasma processing apparatus is provided. The plasma processing apparatus includes a chamber having a processing space defined therein in which plasma is generated; and a plasma generation unit configured to excite gas in the processing space into a plasma state, wherein the plasma generation unit includes: a first power supply to supply power for generation of the plasma; a coil connected to the first power supply; a first shunt capacitor disposed between and connected to a first node of the coil and a ground; and a second shunt capacitor disposed between and connected to a second node other than the first node of the coil and the ground.
PLASMA GENERATOR, PLASMA PROCESSING DEVICE, AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE USING THE PLASMA PROCESSING DEVICE
A plasma generator may include a dielectric tube, an inner helical coil surrounding the dielectric tube and configured to generate plasma by forming a stationary wave of at least one of a magnetic field and an electromagnetic wave in the dielectric tube, a variable capacitor configuring a closed loop with the inner helical coil, an outer helical coil surrounding the inner helical coil and magnetically coupled to the inner helical coil, and a radio frequency (RF) power supply configured to provide RF power at a variable frequency to the inner helical coil.
CLEANING CHAMBER FOR METAL OXIDE REMOVAL
In some embodiments, the present disclosure relates to a process tool that includes a chamber housing defining a processing chamber. Within the processing chamber is a wafer chuck configured to hold a substrate. Further, a bell jar structure is arranged over the wafer chuck such that an opening of the bell jar structure faces the wafer chuck. A plasma coil is arranged over the bell jar structure. An oxygen source coupled to the processing chamber and configured to input oxygen gas into the processing chamber.
DISCHARGE DETECTION APPARATUS AND CHARGED PARTICLE BEAM IRRADIATION APPARATUS
A discharge detection apparatus includes a vacuum container, a conductive installation member in the vacuum container, the installation member being connected to the vacuum container so as to be retained by the vacuum container; a conductive antenna in the vacuum container; and a retainer comprising a material having a specific resistance of 1×10.sup.5 to 1×10.sup.11 (Ω.Math.cm), the retainer retaining the antenna with respect to the installation member without a contact between the installation member and the antenna, by means of a screw located through an inside of the antenna and an inside of the retainer.