A gas supply structure for an inductively coupled plasma (ICP) processing apparatus that includes a main container 10 that houses a substrate to be processed S to perform plasma processing, a substrate mounting unit 20 on which the substrate to be processed S is mounted in the main container 10, an exhaust system 30 that discharges gas from inside of the main container 10, one or more dielectric windows 100 that form an upper window of the main container 10, and one or more RF antennas 40 which are installed to correspond to the dielectric windows 100 outside the main container 10 and to which RF power is applied to form induced electric field in the main container 10, comprising a first diffusion plate 210 that firstly diffuses the processing gas and is connected with a processing gas supplying pipe 300, and a second diffusion plate 220 that diffuses the processing gas diffused by the first diffusion plate 210 into the main container 10 and is installed under the first diffusion plate 210, wherein the second diffusion plate 220 is formed at at least a part of the lower surface of the dielectric windows 100, is provided, so it is possible to perform injection control of the processing gas onto the plane surface of the substrate to be processed and uniform substrate processing.

A plasma processing apparatus includes an ICP antenna, provided outside a processing chamber opposite to a mounting table, for supplying a high frequency power supply into the processing chamber, and a window member made of a conductor, disposed between the mounting table and the ICP antenna, forming a part of a wall of the processing chamber. The window member includes transmission units for transmitting the high frequency power in a thickness direction of the window member. Each of transmission units has a slit, which extends through the window member in the thickness direction and is configured such that its width is changeable.

A method of forming a plasma processing apparatus comprises providing a chamber, the chamber including a wall defining an interior, and a viewport extending through the wall. An analysis apparatus connected to the viewport may be formed. The analysis apparatus includes an analyzer adjacent to the chamber, a probe connected to the analyzer and aligned with the viewport, and a first window aligned with the probe, the first window having a first surface, and a second surface at an opposite side relative to the first surface, the second surface being exposed to the interior of the chamber, and the second surface of the first window has a scattering surface.

Plasma processing apparatus and associated methods are provided. In one example, a plasma processing apparatus includes a plasma chamber. The plasma processing apparatus includes a dielectric wall forming at least a portion of the plasma chamber. The plasma processing apparatus includes an inductive coupling element located proximate the dielectric wall. The plasma processing apparatus includes an ultraviolet light source configured to emit an ultraviolet light beam onto a metal surface that faces an interior volume of the plasma chamber. The plasma processing apparatus includes a controller configured to control the ultraviolet light source.

A method of conditioning internal surfaces of a plasma source includes flowing first source gases into a plasma generation cavity of the plasma source that is enclosed at least in part by the internal surfaces. Upon transmitting power into the plasma generation cavity, the first source gases ignite to form a first plasma, producing first plasma products, portions of which adhere to the internal surfaces. The method further includes flowing the first plasma products out of the plasma generation cavity toward a process chamber where a workpiece is processed by the first plasma products, flowing second source gases into the plasma generation cavity. Upon transmitting power into the plasma generation cavity, the second source gases ignite to form a second plasma, producing second plasma products that at least partially remove the portions of the first plasma products from the internal surfaces.

Methods and apparatus for etching substrates using self-limiting reactions based on removal energy thresholds determined by evaluating the material to be etched and the chemistries used to etch the material involve flow of continuous plasma. Process conditions permit controlled, self-limiting anisotropic etching without alternating between chemistries used to etch material on a substrate. A well-controlled etch front allows a synergistic effect of reactive radicals and inert ions to perform the etching, such that material is etched when the substrate is modified by reactive radicals and removed by inert ions, but not etched when material is modified by reactive radicals but no inert ions are present, or when inert ions are present but material is not modified by reactive radicals.

A plasma system and a filter device are provided. In the system, an area surrounded by a dielectric window is configured as a first chamber for accommodating plasma. A first adapter is arranged under the dielectric window. An area surrounded by the first adapter is configured as a second chamber. A lower electrode platform is placed in the second chamber to carry a workpiece. A filter member of the filter device is placed at an intersection of the first chamber and the second chamber. The filter member includes through-holes configured to filter ions from the plasma. A first extension member extends from the filter member in a first direction and is placed over the first adapter. A second extension member extends from a position of the filter member adjacent to the first extension member to an inner side of the first adapter.

A plasma processing apparatus includes a chamber; a support member in the chamber; a window plate at an upper portion of the chamber and including a window plate body and a fastening hole, wherein the fastening hole includes a lower fastening hole portion and an upper fastening hole portion. and a gas injector including a first body having a plurality of distribution nozzles and a second body having an accommodating groove to which the first body is fastened and a plurality of injection nozzles. The second body includes a first portion disposed inside the upper fastening hole portion, a second portion disposed inside the lower fastening hole portion, and a third portion disposed below the window plate. The second portion of the second body includes a gas hole extending from the accommodating groove to an external side surface of the second portion of the second body.

A dielectric window supporting structure of inductively coupled plasma (ICP) processing apparatus that includes a main container that houses a substrate to perform plasma processing, a substrate mounting unit on which the substrate is mounted, an exhaust system, a plurality of dielectric windows that form an upper window of the main container, a dielectric supporting unit coupled to an upper end of the main container and supports the dielectric window to seal the inside of the main container, and one or more RF antennas installed to correspond to plurality of the dielectric windows outside the main container. The dielectric supporting unit includes a central frame which supports a bottom edge of the dielectric window and an outer frame which supports the central frame. The outer frame is supported by the upper end of the main container. The central frame includes ceramic material and the outer frame includes metallic material.

An Dielectric window of an inductively coupled plasma (ICP) processing apparatus that includes a main container 10 that houses a substrate to be processed S to perform plasma processing, a substrate mounting unit 20 on which the substrate to be processed S is mounted in the main container 10, an exhaust system 30 that discharges gas from inside of the main container 10, a dielectric window 100 that form an upper window of the main container 10, and one or more RF antennas 40 which are installed to correspond to the dielectric windows 100 outside the main container 10 and to which RF power is applied to form induced electric field in the main container 10, wherein the dielectric window 100 is formed as one body from one or more dielectric members, and bonded with a ceramic reinforcing member 120 to at least one surface of the upper surface and the lower surface of the dielectric window 100, including a dielectric window supporting unit 500 supporting at least one of the dielectric window 100 and the ceramic reinforcing member 120 by penetrating at least one of the dielectric window 100 and the ceramic reinforcing member 120 and being connected with a supporting member 12 installed above the main container 10, is provided, so it is possible to minimize power loss by the replacement of a dielectric supporting structure at a region where an antenna is installed, with ceramic.