Systems and methods for adjusting power and frequency based on three or more states are described. One of the methods includes receiving a pulsed signal having multiple states. The pulsed signal is received by multiple radio frequency (RF) generators. When the pulsed signal having a first state is received, an RF signal having a pre-set power level is generated by a first RF generator and an RF signal having a pre-set power level is generated by a second RF generator. Moreover, when the pulsed signal having a second state is received, RF signals having pre-set power levels are generated by the first and second RF generators. Furthermore, when the pulsed signal having a third state is received, RF signals having pre-set power levels are generated by the first and second RF generators.

A plasma generator and a method for the pulsed provision of electrical power having a frequency of at least 40 KHz to at least two process chambers are described. The plasma generator comprises: a control unit configured to obtain and evaluate process data about processes in the at least two process chambers; a controllable power supply having an output, the controllable power supply being configured to output a direct current at a predetermined voltage and/or intensity at its output in response to a control signal from the control unit; and a switching unit having a first input connected to the output of the power supply and having at least two switching unit outputs for respective connection to one of the at least two process chambers. The switching unit is configured to form, from a direct current at the input, an alternating current having a predetermined frequency of at least 40 KHz as an output signal and to selectively output the output signal as a pulse for a predetermined pulse duration to one of the switching unit outputs in response to a control signal from the control unit. The control unit is configured to coordinate power requirements of the at least two process chambers and to drive the power supply and the switching unit such that at the respective switching unit outputs communicating with the process chambers, substantially the power corresponding to the power requirements is provided as pulses over a period of time, wherein the pulses of the respective process chambers are temporally offset from each other such that the process chambers can be operated simultaneously.

Systems and methods for tuning a megahertz radio frequency (RF) generator within a cycle of operation of a kilohertz (kHz) RF generator are described. In one of the methods, a predetermined periodic waveform is provided to a processor. The processor uses a computer-based model to determine plurality of frequency parameters for the predetermined periodic waveform. The frequency parameters are applied to the megahertz RF generator to generate an RF signal having the frequency parameters during one or more cycles of operation of the kilohertz RF generator.

A radio frequency (RF) power generation system includes a RF power source that generates a RF output signal delivered to a load. A RF power controller is configured to generate a control signal to vary the RF output signal. The controller adjusts a parameter associated with the RF output signal, and the parameter is controlled in accordance with a trigger signal. The parameter is adjusted in accordance with a cost function, and the cost function is determined by intruding a perturbation into an actuator that affects the cost function. The actuator may control an external RF output signal, and the trigger signal may vary in accordance with the external RF output signal.

A sputtering apparatus including a chamber, a stage inside the chamber and configured to receive a substrate thereon, a first sputter gun configured to provide a sputtering source to an inside of the chamber, a first RF source configured to provide a first power having a first frequency to the first sputter gun, and a second RF source configured to provide a second power having a second frequency to the first sputter gun, the second frequency being lower than the first frequency may be provided.

A method for processing a substrate includes: supplying a pulsed source RF signal to an antenna disposed above a chamber, the pulsed source RF signal including a plurality of source cycles each having a source operating state and a source non-operating state after the source operating period; and supplying a pulsed bias RF signal to a lower electrode disposed in a substrate support provided in the chamber, the pulsed bias RF signal including a plurality of bias cycles having a same pulse frequency as that of the plurality of source cycles, each bias cycle having a bias operating state during a bias operating period and a bias non-operating state during a bias non-operating period after the bias operating period. A transition timing to the bias operating state in each bias cycle is delayed with respect to a transition timing to the source operating state in a corresponding source cycle.

A method for optimizing delivery of power to a plasma chamber is described. The method includes dividing each cycle of a low frequency (LF) radio frequency generator (RFG) into multiple time intervals. During each of the time intervals, a frequency offset of a high frequency (HF) RFG is generated for which the delivery of power is maximized. The frequency offsets provide a substantially inverse relationship compared to a voltage signal of the LF RFG for each cycle of the voltage signal. The frequency offsets for the time intervals are multiples of the low frequency. The substantially inverse relationship facilitates an increase in the delivery of power to the electrode. A total range of the frequency offsets from a reference HF frequency over the LF RF cycle depends on a power ratio of power that is supplied by the LF RFG and power that is supplied by the HF RFG.

A sputtering apparatus including a chamber, a stage inside the chamber and configured to receive a substrate thereon, a first sputter gun configured to provide a sputtering source to an inside of the chamber, a first RF source configured to provide a first power having a first frequency to the first sputter gun, and a second RF source configured to provide a second power having a second frequency to the first sputter gun, the second frequency being lower than the first frequency may be provided.

A radio frequency (RF) generator is configured to generate a RF signal. The RF signal can be modulated by a pulse having one or multiple states. During an initial state at pulse initiation, the RF generator adjusts the impedance match by selecting the frequency of the RF signal. During a second state of the pulse, the RF generator adjusts the impedance match using a matching network. The first state includes controlling the RF generator to output a power burst, and the second state includes controlling the generator to output an operating power.

A plasma processing apparatus includes a chamber, substrate support, radio-frequency (RF) power supply, bias power supply, measuring device, and controller. The RF power supply provides RF power to a lower electrode included in the substrate support in the chamber or to an upper electrode. The bias power supply provides RF bias power to the lower electrode. The measuring device measures a frequency of a reflected wave of the RF power returned toward the RF power supply. The controller controls the bias power supply to adjust a power level of the RF bias power to a peak value of absolute values of negative shifts in frequency of the reflected wave from a frequency of the RF power, or controls the RF power supply to modulate the RF power in a cycle obtained based on an occurrence time of the peak of absolute values.