There is provided a plasma processing apparatus comprising: a processing container; a lower electrode provided inside the processing container; an upper electrode disposed to face the lower electrode; a gas supply configured to supply a processing gas between the upper electrode and the lower electrode; a high frequency power source configured to generate plasma of the processing gas by applying a high frequency voltage to the upper electrode; and a voltage waveform shaping part provided between the high frequency power source and the upper electrode and configured to shape a voltage waveform of a high frequency voltage output from the high frequency power source by converting a positive voltage component into a negative voltage component.

A plasma processing apparatus for cleaning a peripheral portion of a substrate by plasma and comprising a depressurizable processing container accommodating a substrate is disclosed. The processing container includes a substrate support for supporting a substrate and including a central electrode facing a central portion of the supported substrate supported by the substrate support; a lower ring electrode formed in a ring shape to face a lower surface of a peripheral portion of the substrate supported by the substrate support; and an upper ring electrode disposed to face an upper surface of the peripheral portion of the substrate supported by the substrate support. The central electrode is grounded, a radio frequency (RF) power is supplied to each of the upper and lower ring electrodes, and the RF power is supplied to at least one of the upper and lower ring electrodes via a phase adjuster configured to adjust the phase of the RF power.

There is provided a filter device. In the filter device, a plurality of coils are arranged coaxially. Each of a plurality of wirings is electrically connected to one end of each of the coils. Each of a plurality of capacitors is connected between the other end of each of the coils and the ground. A housing is electrically grounded and configured to accommodate therein the coils. Further, each of the wirings at least partially extends into the housing and has a length that is adjustable in the housing.

A method for achieving uniformity in an etch rate is described. The method includes receiving a voltage signal from an output of a match, and determining a positive crossing and a negative crossing of the voltage signal for each cycle of the voltage signal. The negative crossing of each cycle is consecutive to the positive crossing of the cycle. The method further includes dividing a time interval of each cycle of the voltage signal into a plurality of bins. For one or more of the plurality of bins associated with the positive crossing and one or more of the plurality of bins associated with the negative crossing, the method includes adjusting a frequency of a radio frequency generator to achieve the uniformity in the etch rate.

A switchable reactance unit includes an RF terminal configured to connect to a transmission line for transmitting a signal at a frequency in a range of 1 - 200 MHz, and a switching arrangement comprising a plurality of switching elements used in parallel. Each switching element has a control terminal, and is connected to the RF terminal via at least one individual reactance assigned to the switching element and connected in series with the switching element. The switching elements are controllable or controlled via their control terminals in such a way that they switch simultaneously.

The inventive concept provides a substrate processing apparatus. The substrate processing apparatus may include a chamber having an interior space, a support unit that supports a substrate in the interior space, a ring unit disposed on an edge region of the support unit when viewed from above, an impedance control unit electrically connected to the ring unit to control a flow or density of plasma in an edge region of the substrate and a filter unit disposed between the ring unit and the impedance control unit.

In one embodiment, a system includes an RF source and an RF impedance matching circuit receiving RF power from the RF source. The matching circuit includes at least one variable reactance element, a sensor operably coupled to a component of the matching circuit, and a control circuit. The control circuit receives a signal from the sensor indicative of a parameter value. Upon determining the parameter value meets a first predetermined condition, the control circuit transmits a control signal to the RF source causing the RF source to carry out a power control scheme. The power control scheme causes the RF source to reduce or maintain the RF power without turning off the RF power.

A RF power generator has a RF power source configured to generate an output signal. A power splitter is configured to receive the output signal and generate a plurality of split signals. A demagnetizing circuit is configured to receive the plurality of split signals. The demagnetizing circuit is configured to include a plurality of inductances corresponding to the plurality of split signals. The plurality of inductances is configured to reduce the effects of mutual impedance of an ICP chamber in series with the plurality of inductances so that a ratio between a pair of the plurality of split signals varies substantially linearly as one of the pair of the plurality of split signals is varied.

Disclosed herein is a temperature actuated valve, including a stationary member and a movable member, wherein the stationary member is configured to receive the movable member. A first flow path is defined between an outer surface of the stationary member and an inner surface of a housing and a second flow path defined by and within the movable member. The temperature actuated valve further includes at least one temperature actuated member having a first end seated against a base of the stationary member and a second end seated against a base of the movable member. The temperature actuated valve further includes a bias member having a first end connected to the base of the stationary member and a second end connected to the base of the movable member, the at least one temperature actuated member configured to compress at a first temperature and expand at a second temperature.

A high frequency power supply alternately outputs a first AC voltage and a second AC voltage to a plasma generator. The amplitudes of the first AC voltage and the second AC voltage are different from each other. An impedance adjustment device is disposed in midway of the transmission line of the first AC voltage and the second AC voltage. When the AC voltage output from the high frequency power supply is switched to a first AC voltage, a microcomputer changes the capacitance of a variable capacitor circuit to a first target value. When the AC voltage output from the high frequency power supply is switched to a second AC voltage, the microcomputer changes the capacitance of the variable capacitor circuit to a second target value.